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Research on chemical mechanical poli...

Cheng, Jie.

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Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect/ by Jie Cheng.
作者:	Cheng, Jie.
出版者:	Singapore :Springer Singapore : : 2018.,
面頁冊數:	xviii, 137 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Chemical mechanical planarization. -
電子資源:	http://dx.doi.org/10.1007/978-981-10-6165-3
ISBN:	9789811061653

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect
Cheng, Jie.

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect[electronic resource] /by Jie Cheng. - Singapore :Springer Singapore :2018. - xviii, 137 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

ISBN: 9789811061653

Standard No.: 10.1007/978-981-10-6165-3doiSubjects--Topical Terms:

3235220
Chemical mechanical planarization.

LC Class. No.: TK7874.84

Dewey Class. No.: 621.38152

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect
LDR:01757nmm a2200313 a 4500 001 2131268
003 DE-He213
005 20180601133507.0
006 m d
007 cr nn 008maaau
008 181005s2018 si s 0 eng d
020 $a 9789811061653 $q (electronic bk.)
020 $a 9789811061646 $q (paper)
024 7 $a 10.1007/978-981-10-6165-3 $2 doi
035 $a 978-981-10-6165-3
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7874.84
072 7 $a TGXT $2 bicssc
072 7 $a TEC020000 $2 bisacsh
082 0 4 $a 621.38152 $2 23
090 $a TK7874.84 $b .C518 2018
100 1 $a Cheng, Jie. $3 3296645
245 1 0 $a Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect $h [electronic resource] / $c by Jie Cheng.
260 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2018.
300 $a xviii, 137 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
520 $a This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
650 0 $a Chemical mechanical planarization. $3 3235220
650 0 $a Ruthenium. $3 812217
650 1 4 $a Engineering. $3 586835
650 2 4 $a Manufacturing, Machines, Tools. $3 891025
650 2 4 $a Tribology, Corrosion and Coatings. $3 894259
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a Springer theses. $3 1314442
856 4 0 $u http://dx.doi.org/10.1007/978-981-10-6165-3
950 $a Engineering (Springer-11647)