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Nanoelectronics for microwave applic...

Yu, Zhen.

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Nanoelectronics for microwave applications.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Nanoelectronics for microwave applications./
作者:	Yu, Zhen.
面頁冊數:	171 p.
附註:	Adviser: Peter J. Burke.
Contained By:	Dissertation Abstracts International67-04B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3214086
ISBN:	9780542646331

Nanoelectronics for microwave applications.
Yu, Zhen.

Nanoelectronics for microwave applications. - 171 p.

Adviser: Peter J. Burke.

Thesis (Ph.D.)--University of California, Irvine, 2006.

This dissertation describes three main accomplishments in investigating carbon nanotube electronics for microwave applications: First, the synthesis of ultra-long carbon nanotubes; second, the measurement of the impedance of metallic carbon nanotubes at microwave frequencies; third, the characterization of carbon nanotube field effect transistor ac properties at microwave frequencies.

ISBN: 9780542646331Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Nanoelectronics for microwave applications.
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020 $a 9780542646331
035 $a (UMI)AAI3214086
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040 $a UMI $c UMI
100 1 $a Yu, Zhen. $3 1058436
245 1 0 $a Nanoelectronics for microwave applications.
300 $a 171 p.
500 $a Adviser: Peter J. Burke.
500 $a Source: Dissertation Abstracts International, Volume: 67-04, Section: B, page: 2167.
502 $a Thesis (Ph.D.)--University of California, Irvine, 2006.
520 $a This dissertation describes three main accomplishments in investigating carbon nanotube electronics for microwave applications: First, the synthesis of ultra-long carbon nanotubes; second, the measurement of the impedance of metallic carbon nanotubes at microwave frequencies; third, the characterization of carbon nanotube field effect transistor ac properties at microwave frequencies.
520 $a 0.4 centimeter long single-walled carbon nanotubes are synthesized using a single furnace, methane/hydrogen recipe and nanoparticle/metal catalyst. Measurements of the electrical properties show a resistance per unit length of 6 kO/mum and a 1d conductivity of 8 x 10-9 S-cm.
520 $a For passive applications, the dynamical conductance of electrically contacted SWNTs from dc to 10 GHz as a function of source-drain voltage in both low and high dc bias voltage is measured. The ac conductance of the nanotube itself is found to be equal to the dc conductance over the frequency range studied in both the ballistic and diffusive limit. This clearly demonstrates that nanotubes can carry high-frequency currents xxi as well as dc currents over a wide range of operating conditions. A phenomenological model of the ac impedance of a carbon nanotube in the presence of scattering is developed, which is consistent with the experimental results.
520 $a Another application of carbon nanotube electronics is for carbon nanotube field effect transistor work on ac applications. The small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages is measured. At all bias voltages, the intrinsic device dynamical conductance at 1 GHz is identical to the low frequency dynamical conductance. This result is consistent with the prediction of a cutoff frequency much higher than 1 GHz. This is an important step towards a full characterization of a nanotube transistor for RF and microwave amplifiers.
590 $a School code: 0030.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 $a University of California, Irvine. $3 705821
773 0 $t Dissertation Abstracts International $g 67-04B.
790 $a 0030
790 1 0 $a Burke, Peter J., $e advisor
791 $a Ph.D.
792 $a 2006
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3214086