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Ultra-thin nanocomposite diffusion b...

Zhang, Yu.

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Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits./
作者:	Zhang, Yu.
面頁冊數:	67 p.
附註:	Adviser: Samir Aouadi.
Contained By:	Masters Abstracts International44-05.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1435557
ISBN:	9780542647093

Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits.
Zhang, Yu.

Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits. - 67 p.

Adviser: Samir Aouadi.

Thesis (M.S.)--Southern Illinois University at Carbondale, 2006.

The aim of this thesis is to investigate the optical chemical and structural properties of ultra-thin TaN and TaSiN diffusion barriers. All different sets of thin film coatings were deposited on polished Si(100) wafers via unbalanced reactive magnetron sputtering technique and studied by means of X-ray Diffraction, Rutherford backscattering spectroscopy, Time-of-Flight Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Spectroscopic Ellipsometry.

ISBN: 9780542647093Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Ultra-thin nanocomposite diffusion barriers for the next-generation integrated circuits.
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520 $a The aim of this thesis is to investigate the optical chemical and structural properties of ultra-thin TaN and TaSiN diffusion barriers. All different sets of thin film coatings were deposited on polished Si(100) wafers via unbalanced reactive magnetron sputtering technique and studied by means of X-ray Diffraction, Rutherford backscattering spectroscopy, Time-of-Flight Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Spectroscopic Ellipsometry.
520 $a Real-time spectroscopic ellipsometry (RTSE) will be utilized as a tool to understand the growth process of these materials, and to monitor their thermal stability in real time. RTSE data was simulated using the Drude-Lorentz model to obtain information about the growth mechanism and the conduction electron transport properties for these structures. The films were annealed up to 800°C and the diffusion of copper into silicon was evaluated by monitoring changes in the optical properties of the bilayers.
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