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Semiconductor nanowires and nanotube...

Goldberger, Joshua Elliott.

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Semiconductor nanowires and nanotubes: Synthesis to devices.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Semiconductor nanowires and nanotubes: Synthesis to devices./
作者:	Goldberger, Joshua Elliott.
面頁冊數:	171 p.
附註:	Adviser: Peidong Yang.
Contained By:	Dissertation Abstracts International67-08B.
標題:	Chemistry, Inorganic. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3228335
ISBN:	9780542824296

Semiconductor nanowires and nanotubes: Synthesis to devices.
Goldberger, Joshua Elliott.

Semiconductor nanowires and nanotubes: Synthesis to devices. - 171 p.

Adviser: Peidong Yang.

Thesis (Ph.D.)--University of California, Berkeley, 2006.

One-dimensional nanostructures, including nanowires and nanotubes, are a promising class of basic building blocks for future optical, electronic, nanofluidic, thermoelectric, and energy conversion devices. These nanowire materials are ideal, single-crystalline semiconductors that represent a facile route toward sub-100 nm features that cannot be easily fabricated through lithographic means. This dissertation describes numerous proof-of-concept studies detailing the synthesis of single-crystalline inorganic nanowire and nanotube materials, characterization of their optical and electrical properties, and their integration into novel device applications.

ISBN: 9780542824296Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Semiconductor nanowires and nanotubes: Synthesis to devices.
LDR:04997nam 2200301 a 45 001 969340
005 20110920
008 110921s2006 eng d
020 $a 9780542824296
035 $a (UMI)AAI3228335
035 $a AAI3228335
040 $a UMI $c UMI
100 1 $a Goldberger, Joshua Elliott. $3 1293393
245 1 0 $a Semiconductor nanowires and nanotubes: Synthesis to devices.
300 $a 171 p.
500 $a Adviser: Peidong Yang.
500 $a Source: Dissertation Abstracts International, Volume: 67-08, Section: B, page: 4416.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2006.
520 $a One-dimensional nanostructures, including nanowires and nanotubes, are a promising class of basic building blocks for future optical, electronic, nanofluidic, thermoelectric, and energy conversion devices. These nanowire materials are ideal, single-crystalline semiconductors that represent a facile route toward sub-100 nm features that cannot be easily fabricated through lithographic means. This dissertation describes numerous proof-of-concept studies detailing the synthesis of single-crystalline inorganic nanowire and nanotube materials, characterization of their optical and electrical properties, and their integration into novel device applications.
520 $a First, a novel "epitaxial casting" technique is developed to enable the synthesis of single-crystalline nanotube materials from materials with bulk crystal structures that have a traditional ionic lattice crystal structure. In this technique, ZnO nanowires are used as sacrificial templates for the epitaxial deposition of the desired nanotube material (GaN). The nanowire template is then dissolved away. The resultant nanotubes are seamless single-crystalline materials, lack pinholes, they are mechanically robust, electrically active, and have a high optical quality, with little defect emission. These nanotubes represent a novel platform for the experimental study of nanofluidic transport of ions and biomolecules in a previous inaccessible size regime (3-100 nm).
520 $a The second part of this dissertation details the electrical property characterization of ZnO and GaN nanowire materials and their application into planar electronic devices including transistors, photodetectors, and light emitting diode arrays. These nanowire materials are readily and reliably incorporated as the active semiconductor channels in a planar, three-terminal field effect transistor geometry. Device properties such as mobility and carrier concentration are extracted. These ZnO transistor devices have among the highest mobility values for all ZnO transistors previously fabricated. Additionally, the performance characteristics of the nanowire transistors were found to be intimately tied to the presence and nature of adsorbed surface species, making these materials extremely useful for chemical sensing applications. This thorough characterization allows the integration of these nanowire materials into numerous optical, electronic applications, including devices for light sensing, utilizing the photoconductive properties of ZnO nanowires, and light emission, in light-emitting diodes using GaN nanowires.
520 $a Finally, the reliable, cost-effective integration of these nanowire elements into ultra-high density transistor devices still remains as one of the biggest technological hurdles preventing their direct application. To overcome this problem, a novel approach was developed towards the integration of silicon nanowires into vertical field effect transistors having a surrounding gate geometry without the need for any expensive postgrowth assembly processes. This is accomplished through the controlled, epitaxial synthesis of vertically aligned silicon nanowire arrays from silicon (111) substrates. These nanowire arrays have narrow diameter distributions dictated by the distribution of the seeding colloids. Additionally, the growth position of these nanowire materials can be controlled via accurate placement of these nanoparticle catalysts. The direct vertical integration of these nanowire arrays into surrounding gate field effect transistors is accomplished using conventional very-large-scale-integration processing. This surrounding-gate geometry is the ideal electrostatic gating geometry for the expected minimization of power consumption. The device fabrication allows Si nanowire channel diameters to be readily reduced to the 5-nm regime. These first-generation vertically integrated nanowire field effect transistors (VINFETs) exhibit electronic properties that are comparable to other horizontal nanowire field effect transistors and may, with further optimization, compete with advanced solid-state nanoelectronic devices.
590 $a School code: 0028.
650 4 $a Chemistry, Inorganic. $3 517253
690 $a 0488
710 2 0 $a University of California, Berkeley. $3 687832
773 0 $t Dissertation Abstracts International $g 67-08B.
790 $a 0028
790 1 0 $a Yang, Peidong, $e advisor
791 $a Ph.D.
792 $a 2006
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3228335