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Transport in single molecule transis...
~
Scott, Gavin David.
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Transport in single molecule transistor devices.
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Transport in single molecule transistor devices./
作者:
Scott, Gavin David.
面頁冊數:
160 p.
附註:
Adviser: Hongwen Jiang.
Contained By:
Dissertation Abstracts International68-07B.
標題:
Physics, Condensed Matter. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3272296
ISBN:
9780549132219
Transport in single molecule transistor devices.
Scott, Gavin David.
Transport in single molecule transistor devices.
- 160 p.
Adviser: Hongwen Jiang.
Thesis (Ph.D.)--University of California, Los Angeles, 2007.
The field of molecular electronics represents the premise of electronic devices with characteristics dictated by molecules and molecular complexes, both small and large, which may one day lead to devices with increased functionality and unprecedented limits of device scaling. The incorporation of molecular components into electronic devices has garnered a great deal of attention in recent years. One such device is the single molecule transistor (SMT), which utilizes a single isolated molecule as it's active element. While SMTs have been employed in laboratory research for a number of years, there remain many details related to charge transport that have yet to be delineated.
ISBN: 9780549132219Subjects--Topical Terms:
1018743
Physics, Condensed Matter.
Transport in single molecule transistor devices.
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The field of molecular electronics represents the premise of electronic devices with characteristics dictated by molecules and molecular complexes, both small and large, which may one day lead to devices with increased functionality and unprecedented limits of device scaling. The incorporation of molecular components into electronic devices has garnered a great deal of attention in recent years. One such device is the single molecule transistor (SMT), which utilizes a single isolated molecule as it's active element. While SMTs have been employed in laboratory research for a number of years, there remain many details related to charge transport that have yet to be delineated.
520
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We have used the electrical breakjunction technique to create a nanometersize gap for hosting a single molecule in the narrowest portion of a gold wire defined by electron beam lithography. Several different active elements were used to fabricate the SMTs in this experiment, however the majority of our work has focused on the recently synthesized Borromean Ring complex. Elementary theoretical techniques for modeling transport in SMTs are used to gain insight into what conduction effects may be anticipated. An inherent level of randomness in the formation of SMTs via the breakjunction method ensures that many SMT configurations and resulting electrical conduction characteristics will occur for any group of devices. A statistical sampling indicates that each basic moleculeelectrode configuration can be anticipated with a certain frequency of occurrence. We have observed statistically significant differences in the behavior of SMTs made with particular active elements. A study on the cumulative effect of using molecular complexes with substituent anchoring groups is reported. We have also observed a host of atypical, but potentially significant, devices and device features that may lead to new prospective applications for SMTs, most notably an electrostatically induced transformation in the coupling strength between an active element and its contact electrodes. The diverse range of transport properties found in the SMTs underscores their utility and potential scope of device applications.
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