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Modeling of displacement damage in s...

Khorsandi, Behrooz.

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Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation./
作者:	Khorsandi, Behrooz.
面頁冊數:	216 p.
附註:	Adviser: Thomas E. Blue.
Contained By:	Dissertation Abstracts International68-01B.
標題:	Engineering, Nuclear. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3247937

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation.
Khorsandi, Behrooz.

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation. - 216 p.

Adviser: Thomas E. Blue.

Thesis (Ph.D.)--The Ohio State University, 2007.

A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.Subjects--Topical Terms:

1043651
Engineering, Nuclear.

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation.
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245 1 0 $a Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation.
300 $a 216 p.
500 $a Adviser: Thomas E. Blue.
500 $a Source: Dissertation Abstracts International, Volume: 68-01, Section: B, page: 0600.
502 $a Thesis (Ph.D.)--The Ohio State University, 2007.
520 $a A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.
520 $a There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties.
520 $a Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated.
590 $a School code: 0168.
650 4 $a Engineering, Nuclear. $3 1043651
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710 2 $a The Ohio State University. $3 718944
773 0 $t Dissertation Abstracts International $g 68-01B.
790 $a 0168
790 1 0 $a Blue, Thomas E., $e advisor
791 $a Ph.D.
792 $a 2007
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