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Growth of single crystal diamond.

Regmi, Murari.

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Growth of single crystal diamond.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Growth of single crystal diamond./
作者:	Regmi, Murari.
面頁冊數:	182 p.
附註:	Adviser: Brage Golding.
Contained By:	Dissertation Abstracts International68-09B.
標題:	Physics, Condensed Matter. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3282192
ISBN:	9780549241478

Growth of single crystal diamond.
Regmi, Murari.

Growth of single crystal diamond. - 182 p.

Adviser: Brage Golding.

Thesis (Ph.D.)--Michigan State University, 2007.

The subject of the research presented in this dissertation is the growth of single crystal diamond by microwave plasma chemical vapor deposition (CVD). Both heteroepitaxial and homoepitaxial growth methods have been examined, with emphasis on producing large diamond crystals of high structural and chemical perfection.

ISBN: 9780549241478Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Growth of single crystal diamond.
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502 $a Thesis (Ph.D.)--Michigan State University, 2007.
520 $a The subject of the research presented in this dissertation is the growth of single crystal diamond by microwave plasma chemical vapor deposition (CVD). Both heteroepitaxial and homoepitaxial growth methods have been examined, with emphasis on producing large diamond crystals of high structural and chemical perfection.
520 $a By heteroepitaxy, epitaxial growth on a foreign substrate, diamond was grown on (001) Ir thin-film epitaxial buffer layers deposited on (001) strontium titanate (SrTiO3) by DC magnetron sputtering. To nucleate diamond on Ir, the Ir surface was bombarded with low energy ions extracted from the hydrocarbon plasma, a process known as DC biasing or bias-enhanced nucleation. Since this critical process is poorly understood, attention was paid to the spatial and temporal evolution of the Ir surface during the bias treatment. It was discovered that the biased Ir surface is etched on a surprisingly short time scale during which highly correlated nanopillars, 3-4 nm in height with mean separation 15 nm, emerge. The etching process is spatially non-uniform, propagating from substrate center to substrate edge in minutes. Diamond grew on Ir without an intervening phase. Lattice images revealed that interfacial strain from the 7% Ir-diamond lattice mismatch is largely relieved by misfit dislocations within 1 nm of the interface. It is suggested that the high nucleation density obtained with specific bias conditions is associated with the roughened Ir surface.
520 $a To grow heteroepitaxial diamond as thick films, a two-step growth method was explored. This process involved the transfer of a thin heteroepitaxial diamond film, still attached to a substrate, to a second reactor where high growth rate conditions were possible. Characterization of films grown by this approach showed that the resulting diamond had much lower levels of internal strain, suggesting that the process could be used to grow diamond crystals of structural quality similar to natural diamond.
520 $a In homoepitaxy, epitaxial growth on a substrate of the same material, diamond was deposited by CVD directly onto high-pressure, high-temperature Type Ib diamond substrates. Methods for removing substrate surface damage, as well as other imperfections, were devised by use of plasma etching. The characteristics and statistics of pits formed during etching were studied. Diamond growth methods were developed with the aim of minimizing the formation of various structural and chemical defects. To accomplish this, several growth parameters were varied, including substrate temperature, feed gas concentration, growth rate, substrate surface, microwave power, and reactor geometry. Regions of parameter space were found in which the diamond (001) surface remained smooth during growth, and complete suppression of instabilities that create hillocks or non-epitaxial crystallites was demonstrated. A great deal of information was obtained by interrupting growth, removing the crystal from the reactor for optical inspection, and then resuming the process with no apparent negative effects. Diamond crystals were grown on 3 x 3 mm2 substrates with thicknesses greater than 0.5 mm. The chemical purity of the crystals was such that it was impossible to observe signatures of substitutional nitrogen at the ppm level.
590 $a School code: 0128.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Fluid and Plasma. $3 1018402
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791 $a Ph.D.
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