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Pulsed laser deposition of doped zin...

Erie, Jean-Marie George.

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Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications./
Author:	Erie, Jean-Marie George.
Description:	285 p.
Notes:	Adviser: David P. Norton.
Contained By:	Dissertation Abstracts International69-01B.
Subject:	Chemistry, Inorganic. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3299341
ISBN:	9780549436195

Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications.
Erie, Jean-Marie George.

Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications. - 285 p.

Adviser: David P. Norton.

Thesis (Ph.D.)--University of Florida, 2007.

I analyzed the effects of doping ZnO films with As, N, Nb and Ta and (Mg, Zn)O films by pulsed laser deposition. For the As doped films, photoluminescence and Hall measurements revealed the films were compensated and compensation depended on dopant concentration. The As related acceptor-bound exciton, acceptor binding energy and thermal activation energy was dependent of dopant content and O2 growth pressure. Binding energy of the As related acceptor varied from 190 meV for the ZnO films doped with 0.02 atomic percent of (at %) As to 90 meV for a films doped with 2 at % As. The plot of acceptor optical binding energy against p1/3 suggests that the binding energy at infinite dilution to be approximately 160 meV. The ZnO films doped with 0.2 at % As doped on MgO buffer layer showed the lowest degree of compensation with resistivity, carrier density and mobility on the order of 71 O.cm, 2 x 1016 cm-3 and 2 cm2/(V.s), respectively. N doped films showed acceptor bound emission and N-acceptor binding energy of 160 meV and N doped ZnO optical binding energy did not show any dependence on film N concentration. The donor-bound exciton emission for the Nd and Ta doped films Ire around 3.31 eV and 3.33 eV, respectively. The Mg0.05Zn 0.95O:As0.002 film grown at 500°C and 60 mTorr showed p-type behavior, where as, the As doped films with higher Mg content were n-type regardless of growth conditions.

ISBN: 9780549436195Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications.
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005 20110524
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020 $a 9780549436195
035 $a (UMI)AAI3299341
035 $a AAI3299341
040 $a UMI $c UMI
100 1 $a Erie, Jean-Marie George. $3 1271292
245 1 0 $a Pulsed laser deposition of doped zinc oxide and (magnesium, zinc)oxide films for optoelectronic applications.
300 $a 285 p.
500 $a Adviser: David P. Norton.
500 $a Source: Dissertation Abstracts International, Volume: 69-01, Section: B, page: 0600.
502 $a Thesis (Ph.D.)--University of Florida, 2007.
520 $a I analyzed the effects of doping ZnO films with As, N, Nb and Ta and (Mg, Zn)O films by pulsed laser deposition. For the As doped films, photoluminescence and Hall measurements revealed the films were compensated and compensation depended on dopant concentration. The As related acceptor-bound exciton, acceptor binding energy and thermal activation energy was dependent of dopant content and O2 growth pressure. Binding energy of the As related acceptor varied from 190 meV for the ZnO films doped with 0.02 atomic percent of (at %) As to 90 meV for a films doped with 2 at % As. The plot of acceptor optical binding energy against p1/3 suggests that the binding energy at infinite dilution to be approximately 160 meV. The ZnO films doped with 0.2 at % As doped on MgO buffer layer showed the lowest degree of compensation with resistivity, carrier density and mobility on the order of 71 O.cm, 2 x 1016 cm-3 and 2 cm2/(V.s), respectively. N doped films showed acceptor bound emission and N-acceptor binding energy of 160 meV and N doped ZnO optical binding energy did not show any dependence on film N concentration. The donor-bound exciton emission for the Nd and Ta doped films Ire around 3.31 eV and 3.33 eV, respectively. The Mg0.05Zn 0.95O:As0.002 film grown at 500°C and 60 mTorr showed p-type behavior, where as, the As doped films with higher Mg content were n-type regardless of growth conditions.
590 $a School code: 0070.
650 4 $a Chemistry, Inorganic. $3 517253
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Optics. $3 1018756
690 $a 0488
690 $a 0752
690 $a 0794
710 2 $a University of Florida. $3 718949
773 0 $t Dissertation Abstracts International $g 69-01B.
790 $a 0070
790 1 0 $a Norton, David P., $e advisor
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3299341