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Negative electron affinity photocath...

Baum, Aaron Wolf.

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Negative electron affinity photocathodes as high-performance electron sources for electron beam lithography and microscopy.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Negative electron affinity photocathodes as high-performance electron sources for electron beam lithography and microscopy./
作者:	Baum, Aaron Wolf.
面頁冊數:	77 p.
附註:	Adviser: R. Fabian W. Pease.
Contained By:	Dissertation Abstracts International58-09B.
標題:	Physics, Electricity and Magnetism. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9810080
ISBN:	9780591605532

Negative electron affinity photocathodes as high-performance electron sources for electron beam lithography and microscopy.
Baum, Aaron Wolf.

Negative electron affinity photocathodes as high-performance electron sources for electron beam lithography and microscopy. - 77 p.

Adviser: R. Fabian W. Pease.

Thesis (Ph.D.)--Stanford University, 1997.

To meet the microelectronics industry's increasing demands for high-throughput, high-resolution electron beam lithography and microscopy, new electron sources with improved properties are required. Negative electron affinity photocathodes have a number of qualities that make them an exciting electron source for future electron beam instruments. Their emission surface is flat and uniformly sensitive to red and infrared light, facilitating the creation of arrays of independently modulated electron beams which could greatly speed electron beam lithography. Their low energy spread, low emission noise, and low angular spread are also well known. Key issues unresolved in previous work were maximum brightness, minimum energy spread at room temperature, and stability in electron guns compatible with commercial column technology. Our measurements in sealed tubes have demonstrated a brightness of $\rm1\times10\sp8\ A/cm\sp2$-sr at 3kV, and an energy spread as low as 50 meV at room temperature. A UHV system for activating and characterizing the beam properties and stability has been built, and the emission from an activated cathode has been maintained for over 120 days at up to 170 nA. Spot sizes measured as small as 1.9 $\mu

ISBN: 9780591605532Subjects--Topical Terms:

1019535
Physics, Electricity and Magnetism.

Negative electron affinity photocathodes as high-performance electron sources for electron beam lithography and microscopy.
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100 1 $a Baum, Aaron Wolf. $3 1269404
245 1 0 $a Negative electron affinity photocathodes as high-performance electron sources for electron beam lithography and microscopy.
300 $a 77 p.
500 $a Adviser: R. Fabian W. Pease.
500 $a Source: Dissertation Abstracts International, Volume: 58-09, Section: B, page: 4892.
502 $a Thesis (Ph.D.)--Stanford University, 1997.
520 $a To meet the microelectronics industry's increasing demands for high-throughput, high-resolution electron beam lithography and microscopy, new electron sources with improved properties are required. Negative electron affinity photocathodes have a number of qualities that make them an exciting electron source for future electron beam instruments. Their emission surface is flat and uniformly sensitive to red and infrared light, facilitating the creation of arrays of independently modulated electron beams which could greatly speed electron beam lithography. Their low energy spread, low emission noise, and low angular spread are also well known. Key issues unresolved in previous work were maximum brightness, minimum energy spread at room temperature, and stability in electron guns compatible with commercial column technology. Our measurements in sealed tubes have demonstrated a brightness of $\rm1\times10\sp8\ A/cm\sp2$-sr at 3kV, and an energy spread as low as 50 meV at room temperature. A UHV system for activating and characterizing the beam properties and stability has been built, and the emission from an activated cathode has been maintained for over 120 days at up to 170 nA. Spot sizes measured as small as 1.9 $\mu $m 1/e$\sp2$ diameter were obtained from this cathode, and the cathode surface imaged to $\sim $1 $\mu $m resolution. A thinner GaAs photocathode yielded a brightness of $\rm7.5\times10\sp5\ A/cm\sp2$-sr at 3 kV (1.9 $\mu $m emission area). This lower value is probably due to the lower quantum efficiency (0.6%) in this case. Lifetime measurements were also performed on this cathode, showing a decay of 0.15%/hour for a 17 nA beam, measured over 62 hours. This decay was localized to an area approximately 1 mm in diameter. An experiment with cesium feedback demonstrated an ability to hold the cathode's emission steady within a 2.5% range over a period of 8 hours using computer-controlled cesium deposition. Future investigations using this apparatus will address the amelioration of cathode decay, maximum brightness, the relationship between brightness and energy spread, and advanced cathode structures.
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650 4 $a Physics, Electricity and Magnetism. $3 1019535
650 4 $a Physics, Elementary Particles and High Energy. $3 1019488
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710 2 $a Stanford University. $3 754827
773 0 $t Dissertation Abstracts International $g 58-09B.
790 $a 0212
790 1 0 $a Pease, R. Fabian W., $e advisor
791 $a Ph.D.
792 $a 1997
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9810080