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Radiation transport in low pressure ...

Rajaraman, Kapil.

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Radiation transport in low pressure plasmas: Lighting and semiconductor etching plasmas.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Radiation transport in low pressure plasmas: Lighting and semiconductor etching plasmas./
作者:	Rajaraman, Kapil.
面頁冊數:	189 p.
附註:	Adviser: Mark J. Kushner.
Contained By:	Dissertation Abstracts International66-12B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3199120
ISBN:	9780542447716

Radiation transport in low pressure plasmas: Lighting and semiconductor etching plasmas.
Rajaraman, Kapil.

Radiation transport in low pressure plasmas: Lighting and semiconductor etching plasmas. - 189 p.

Adviser: Mark J. Kushner.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.

In some technological plasmas like lamps, the transport of UV radiation is an important design consideration. In other instances, such as semiconductor materials processing, the role of UV photons in surface processes is poorly understood. Since the basic surface reaction mechanisms in semiconductor processing are now being developed, it is an opportune time to investigate the role of UV photons.

ISBN: 9780542447716Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Radiation transport in low pressure plasmas: Lighting and semiconductor etching plasmas.
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100 1 $a Rajaraman, Kapil. $3 1269182
245 1 0 $a Radiation transport in low pressure plasmas: Lighting and semiconductor etching plasmas.
300 $a 189 p.
500 $a Adviser: Mark J. Kushner.
500 $a Source: Dissertation Abstracts International, Volume: 66-12, Section: B, page: 6698.
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
520 $a In some technological plasmas like lamps, the transport of UV radiation is an important design consideration. In other instances, such as semiconductor materials processing, the role of UV photons in surface processes is poorly understood. Since the basic surface reaction mechanisms in semiconductor processing are now being developed, it is an opportune time to investigate the role of UV photons.
520 $a To investigate radiative processes in lighting plasmas, a Monte Carlo Radiation Transport Model was developed and interfaced with a two-dimensional plasma equipment model (HPEM). Investigations were performed on low pressure Ar/Hg electrodeless discharges. We found that analytically computed radiation trapping factors are less accurate when there is a non-uniform density of absorbers and emitters, as may occur in low pressure lamps. In our case these non-uniformities are due primarily to cataphoresis. We found that the shape of the plasma cavity influences trapping factors, primarily due to the consequences of transport of Hg ions on the distribution of radiators.
520 $a To address the role of radiation transport in semiconductor etching plasmas, we investigated the plasma etching of SiO2 in fluorocarbon plasmas, a process dependent on polymer deposition. We first developed a surface reaction mechanism to understand the role played by the polymer film that overlays the SiO2 substrate, and is essential to facilitating an etch. This mechanism was implemented in a Surface Kinetics Model of the HPEM. We found that the dominant etch channel in C4F8 plasmas was due to the fluorine released in the polymer layer by energetic ion bombardment. For plasmas that do not lead to strongly bound films (like C2F 6 plasmas), defluorination is no longer the dominant SiO2 etch process.
520 $a Finally, we combined the models above to address radiation transport in fluorocarbon/Ar etching plasmas. We found that resonance radiation from Ar produced only small increases in etch rate due to photon-induced defluorination, and this increase was well offset by the decrease in etch rate due to a lower amount of etchant fluorine in the polymer layer. At the process regimes of interest to us, the ion-induced defluorination was much more dominant than UV-induced defluorination.
590 $a School code: 0090.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Fluid and Plasma. $3 1018402
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710 2 $a University of Illinois at Urbana-Champaign. $3 626646
773 0 $t Dissertation Abstracts International $g 66-12B.
790 $a 0090
790 1 0 $a Kushner, Mark J., $e advisor
791 $a Ph.D.
792 $a 2005
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3199120