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Multi-scale transport phenomena in l...

Grapperhaus, Michael James.

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Multi-scale transport phenomena in low-pressure plasmas.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Multi-scale transport phenomena in low-pressure plasmas./
Author:	Grapperhaus, Michael James.
Description:	116 p.
Notes:	Adviser: Mark J. Kushner.
Contained By:	Dissertation Abstracts International59-05B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9834680
ISBN:	9780591880953

Multi-scale transport phenomena in low-pressure plasmas.
Grapperhaus, Michael James.

Multi-scale transport phenomena in low-pressure plasmas. - 116 p.

Adviser: Mark J. Kushner.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.

As dimensions of the features in microelectronic devices shrink, understanding and control of the properties of processing plasmas become increasingly important to ensure quality and reproducibility of processing steps. To model these systems, length scales ranging from the Debye length, which is in the range of 1-100 $\mu

ISBN: 9780591880953Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Multi-scale transport phenomena in low-pressure plasmas.
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008 110523s1998 ||||||||||||||||| ||eng d
020 $a 9780591880953
035 $a (UMI)AAI9834680
035 $a AAI9834680
040 $a UMI $c UMI
100 1 $a Grapperhaus, Michael James. $3 1269122
245 1 0 $a Multi-scale transport phenomena in low-pressure plasmas.
300 $a 116 p.
500 $a Adviser: Mark J. Kushner.
500 $a Source: Dissertation Abstracts International, Volume: 59-05, Section: B, page: 2267.
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
520 $a As dimensions of the features in microelectronic devices shrink, understanding and control of the properties of processing plasmas become increasingly important to ensure quality and reproducibility of processing steps. To model these systems, length scales ranging from the Debye length, which is in the range of 1-100 $\mu $m , to the reactor dimensions, which are tens of cm; and time scales ranging from the plasma frequency of 0.1-10 GHz to the applied voltage frequency, which can be a low as 10-1000 kHz, must be modeled.
520 $a To accurately represent the boundary conditions at the plasma-wall interface, a model which represents the small scales in the sheath region is needed. A sheath model, whose predictions closely match experimental results, has been developed and is integrated within the Hybrid Plasma Equipment Model (HPEM). Plasmas have been examined having inductively coupled powers from 200 to 800 W and rf bias powers from 50 to 400 W for Ar and Ar/Cl$\sb2$ gas mixtures. It was found that the sheath voltage wave form remained nearly sinusoidal and that the plasma density, and consequently the ion flux to the surface, scaled primarily with inductively coupled power.
520 $a Modifications have been made to the HPEM to model ionized-metal physical vapor deposition systems, including sputtering from surface, electron motion in magnetic fields, and slowing of sputtered atoms to thermal speeds in the plasma volume. The deposition rate of metal on the substrate is found to be reduced as pressure increases due to the increase in diffusive losses. It is also seen that the sputtering of the auxiliary coils can be a significant issue in these systems.
520 $a To account for the surface effects on the plasma behavior, a mesoscale Monte Carlo simulation has been developed which joins the die-scale surface chemistry with the plasma scale in the HPEM. The presence of etch products in the plasma is seen to perturb the bulk plasma. The presence of photoresist redeposition is seen to have a minor, but important, effect on the etch rate. At low pressure, the etch rate is increased, although the probability of a given ion causing an etch is decreased.
590 $a School code: 0090.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Fluid and Plasma. $3 1018402
690 $a 0544
690 $a 0759
710 2 $a University of Illinois at Urbana-Champaign. $3 626646
773 0 $t Dissertation Abstracts International $g 59-05B.
790 $a 0090
790 1 0 $a Kushner, Mark J., $e advisor
791 $a Ph.D.
792 $a 1998
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9834680