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Time dependant modeling of heteroepi...

DeGraffenreid, James Charles.

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Time dependant modeling of heteroepitaxial growth in one- and two-dimensions.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Time dependant modeling of heteroepitaxial growth in one- and two-dimensions./
作者:	DeGraffenreid, James Charles.
面頁冊數:	125 p.
附註:	Source: Dissertation Abstracts International, Volume: 68-11, Section: B, page: 7390.
Contained By:	Dissertation Abstracts International68-11B.
標題:	Physics, Condensed Matter. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3287930
ISBN:	9780549309352

Time dependant modeling of heteroepitaxial growth in one- and two-dimensions.
DeGraffenreid, James Charles.

Time dependant modeling of heteroepitaxial growth in one- and two-dimensions. - 125 p.

Source: Dissertation Abstracts International, Volume: 68-11, Section: B, page: 7390.

Thesis (Ph.D.)--Arizona State University, 2007.

Heteroepitaxial growth offers the possibility of many technological innovations because of the ability to engineer the valence and conduction bands and to create small, self-organized semiconductor structures that can serve as quantum dots. As with so many areas in physics, experiments and theoretical modeling are used to understand the physical phenomena observed. One of the most interesting phenomena is the growth of strained, heteroepitaxial islands in the Stranski-Krastanov (layer+island) mode.

ISBN: 9780549309352Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Time dependant modeling of heteroepitaxial growth in one- and two-dimensions.
LDR:02455nam 2200277 a 45 001 942161
005 20110519
008 110519s2007 ||||||||||||||||| ||eng d
020 $a 9780549309352
035 $a (UMI)AAI3287930
035 $a AAI3287930
040 $a UMI $c UMI
100 1 $a DeGraffenreid, James Charles. $3 1266257
245 1 0 $a Time dependant modeling of heteroepitaxial growth in one- and two-dimensions.
300 $a 125 p.
500 $a Source: Dissertation Abstracts International, Volume: 68-11, Section: B, page: 7390.
502 $a Thesis (Ph.D.)--Arizona State University, 2007.
520 $a Heteroepitaxial growth offers the possibility of many technological innovations because of the ability to engineer the valence and conduction bands and to create small, self-organized semiconductor structures that can serve as quantum dots. As with so many areas in physics, experiments and theoretical modeling are used to understand the physical phenomena observed. One of the most interesting phenomena is the growth of strained, heteroepitaxial islands in the Stranski-Krastanov (layer+island) mode.
520 $a In this work, a continuum model which incorporates microscopic dynamics is used to study the growth of such islands. In one-dimension, the model is used to study growth by incorporating the change in diffusion energy due to strain. The diffusion energy is modeled as a linear function of strain. The coefficients are the difference between the adatom-induced surface stress at the saddle point and the binding site. It is shown that although the strain at the binding site introduces a repulsive potential, the change in the diffusion barrier is the dominant effect in island growth. This is done using the flat island approximation for the island strain field and in two-dimensions with an analytic form for the strain field derived from linear elasticity theory. The surface chemical potential is also used in two-dimensions.
520 $a The surface chemical potential includes a repulsive potential which is the strain energy due to the island. The study of anisotropy in two-dimensions shows that strain anisotropy is the dominant effect and that by combining deposition cycling with anisotropy nanowire structures can be formed.
590 $a School code: 0010.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Theory. $3 1019422
690 $a 0611
690 $a 0753
710 2 $a Arizona State University. $3 1017445
773 0 $t Dissertation Abstracts International $g 68-11B.
790 $a 0010
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3287930