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Full-wave time-domain modeling of mi...

Tsai, Hsiao-Ping.

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Full-wave time-domain modeling of microwave nonlineardevices and circuits.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Full-wave time-domain modeling of microwave nonlineardevices and circuits./
Author:	Tsai, Hsiao-Ping.
Description:	75 p.
Notes:	Chair: Tatsuo Itoh.
Contained By:	Dissertation Abstracts International63-01B
Subject:	Engineering, Electronics and Electrical -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3040243
ISBN:	0493536485

Full-wave time-domain modeling of microwave nonlineardevices and circuits.
Tsai, Hsiao-Ping.

Full-wave time-domain modeling of microwave nonlineardevices and circuits. - 75 p.

Chair: Tatsuo Itoh.

Thesis (Ph.D.)--University of California, Los Angeles, 2002.

A two-dimensional Finite-Volume Time-Domain (FVTD) method using a triangular grid is applied to the analysis of electromagnetic wave propagation in a semiconductor. Maxwell's equations form the basis of all electromagnetic phenomena in semiconductors and the drift-diffusion model is employed to simulate charge transport phenomena in the semiconductor. The FVTD technique is employed to solve Maxwell's equations on an irregular grid and the finite box method is implemented on the same grid to solve the drift-diffusion model for carrier concentration. To achieve suitable accuracy and computational efficiency, using irregular grid topology allows a finer mesh in doped region and at junction, and a coarser mesh in substrate and insulting regions. The proposed scheme has been implemented and verified by characterizing electromagnetic wave propagation at microwave frequency in a semiconductor slab with arbitrary doping profile. An extension of the unconditionally stable finite element time domain (FETD) method is proposed for the global electromagnetic analysis of active microwave circuits. This formulation has two advantages. First, the time step size is no longer governed by the spatial discretization of the mesh, but rather by the Nyquist sampling criterion. Second, the implementation of the truncation by the perfectly matched layers (PML) is straightforward. An anisotropic PML absorbing material is presented for the truncation of FETD lattices. Reflection less than −50dB is obtained numerically over the entire propagation bandwidth in waveguide and microstrip line. A benchmark test on a microwave amplifier indicates that this extended FETD algorithm is not only superior to FDTD-based algorithm in mesh flexibility and simulation accuracy, but also reduces computation time dramatically

ISBN: 0493536485Subjects--Topical Terms:

1260285
Engineering, Electronics and Electrical

Full-wave time-domain modeling of microwave nonlineardevices and circuits.
LDR:02668nam 2200265 a 45 001 936595
005 20110510
008 110510s2002 eng d
020 $a 0493536485
035 $a (UnM)AAI3040243
035 $a AAI3040243
040 $a UnM $c UnM
100 1 $a Tsai, Hsiao-Ping. $3 1260313
245 1 0 $a Full-wave time-domain modeling of microwave nonlineardevices and circuits.
300 $a 75 p.
500 $a Chair: Tatsuo Itoh.
500 $a Source: Dissertation Abstracts International, Volume: 63-01, Section: B, page: 0444.
502 $a Thesis (Ph.D.)--University of California, Los Angeles, 2002.
520 $a A two-dimensional Finite-Volume Time-Domain (FVTD) method using a triangular grid is applied to the analysis of electromagnetic wave propagation in a semiconductor. Maxwell's equations form the basis of all electromagnetic phenomena in semiconductors and the drift-diffusion model is employed to simulate charge transport phenomena in the semiconductor. The FVTD technique is employed to solve Maxwell's equations on an irregular grid and the finite box method is implemented on the same grid to solve the drift-diffusion model for carrier concentration. To achieve suitable accuracy and computational efficiency, using irregular grid topology allows a finer mesh in doped region and at junction, and a coarser mesh in substrate and insulting regions. The proposed scheme has been implemented and verified by characterizing electromagnetic wave propagation at microwave frequency in a semiconductor slab with arbitrary doping profile. An extension of the unconditionally stable finite element time domain (FETD) method is proposed for the global electromagnetic analysis of active microwave circuits. This formulation has two advantages. First, the time step size is no longer governed by the spatial discretization of the mesh, but rather by the Nyquist sampling criterion. Second, the implementation of the truncation by the perfectly matched layers (PML) is straightforward. An anisotropic PML absorbing material is presented for the truncation of FETD lattices. Reflection less than −50dB is obtained numerically over the entire propagation bandwidth in waveguide and microstrip line. A benchmark test on a microwave amplifier indicates that this extended FETD algorithm is not only superior to FDTD-based algorithm in mesh flexibility and simulation accuracy, but also reduces computation time dramatically
590 $a School code: 0031
650 $a Engineering, Electronics and Electrical $3 1260285
690 $a 054
710 2 $a University of California, Los Angeles $3 1260311
773 0 $t Dissertation Abstracts International $g 63-01B
790 $a 003
790 1 $a Itoh, Tatsuo, $e adviso
791 $a Ph.D
792 $a 200
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3040243