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Studies on the defect structure of i...

Gonzalez Aviles, Gabriela Bibiana.

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Studies on the defect structure of indium-tin oxide using x-ray and neutron diffraction.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Studies on the defect structure of indium-tin oxide using x-ray and neutron diffraction./
作者:	Gonzalez Aviles, Gabriela Bibiana.
面頁冊數:	231 p.
附註:	Adviser: Thomas O. Mason.
Contained By:	Dissertation Abstracts International64-04B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3087916

Studies on the defect structure of indium-tin oxide using x-ray and neutron diffraction.
Gonzalez Aviles, Gabriela Bibiana.

Studies on the defect structure of indium-tin oxide using x-ray and neutron diffraction. - 231 p.

Adviser: Thomas O. Mason.

Thesis (Ph.D.)--Northwestern University, 2003.

The transparent conductor, <math> <f> <rm>In<inf>2-x</inf>Sn<inf>x</inf>O<inf>3+<fr><nu>x</nu><de>2 </de></fr></inf></rm></f> </math>, also known as indium-tin oxide (ITO), crystallizes in a fluorite-derived structure with two distinct (<italic>b</italic> and <italic>d</italic>) cation positions and oxygens occupying lattice and interstitial (Oi) sites. Models of its defect chemistry include reducible (2Sn<super>•</super> <math> <f> <rm>O′′<inf>i</inf></rm></f> </math>)<super>x</super> clusters, whose concentration depends on oxygen partial pressure, and non-reducible associates maintaining a 2:1 Sn/Oi ratio. For this study, bulk and nano-powders were annealed in oxidizing and reducing environments and quenched to room temperature. High-temperature <italic> in situ</italic> electrical properties were measured. Structural information was obtained from EXAFS analysis and combined Rietveld refinement of time-of-flight neutron and anomalous x-ray diffraction data.Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Studies on the defect structure of indium-tin oxide using x-ray and neutron diffraction.
LDR:03992nam 2200289 a 45 001 934710
005 20110509
008 110509s2003 eng d
035 $a (UnM)AAI3087916
035 $a AAI3087916
040 $a UnM $c UnM
100 1 $a Gonzalez Aviles, Gabriela Bibiana. $3 1258409
245 1 0 $a Studies on the defect structure of indium-tin oxide using x-ray and neutron diffraction.
300 $a 231 p.
500 $a Adviser: Thomas O. Mason.
500 $a Source: Dissertation Abstracts International, Volume: 64-04, Section: B, page: 1864.
502 $a Thesis (Ph.D.)--Northwestern University, 2003.
520 $a The transparent conductor, <math> <f> <rm>In<inf>2-x</inf>Sn<inf>x</inf>O<inf>3+<fr><nu>x</nu><de>2 </de></fr></inf></rm></f> </math>, also known as indium-tin oxide (ITO), crystallizes in a fluorite-derived structure with two distinct (<italic>b</italic> and <italic>d</italic>) cation positions and oxygens occupying lattice and interstitial (Oi) sites. Models of its defect chemistry include reducible (2Sn<super>•</super> <math> <f> <rm>O′′<inf>i</inf></rm></f> </math>)<super>x</super> clusters, whose concentration depends on oxygen partial pressure, and non-reducible associates maintaining a 2:1 Sn/Oi ratio. For this study, bulk and nano-powders were annealed in oxidizing and reducing environments and quenched to room temperature. High-temperature <italic> in situ</italic> electrical properties were measured. Structural information was obtained from EXAFS analysis and combined Rietveld refinement of time-of-flight neutron and anomalous x-ray diffraction data.
520 $a The measured transport properties suggest that the carrier concentration increases as <math> <f> <rm>P<inf>O<inf>2</inf></inf><hsp sp="0.212">-<fr><nu> 1</nu><de>8</de></fr></rm></f> </math>, under oxidizing conditions, and plateaus under reducing conditions. The <math> <f> <rm>P<inf>O<inf>2</inf></inf></rm></f> </math> dependence supports the ionization of the reducible (2Sn<super>• </super> <math> <f> <rm>O′′<inf>i</inf></rm></f> </math>)<super>x</super> clusters proposed by Frank and Köstlin. The plateau of the electrical properties indicates that any Oi species remaining under such reducing environments are present in non-reducible associates. Sn is found to substitute into both cation positions, but the <italic>b</italic> site is preferred. EXAFS analysis shows that in ITO and In2O 3 the In-O distance is 2.18 Å, while the Sn-O length shortens to 2.07 Å in ITO, supporting the clustering of tin with oxygen. O i species are found to be absent in pure In2O3 samples and present in ITO materials. The ratios of Sn/Oi in oxidized bulk- and nano-ITO are 2.2(4) and 1.7(1), respectively, in agreement with the ratio of 2 predicted by Frank and Köstlin. The Oi population decreased during reduction by 60% in the bulk and by 45% in the nano-ITO samples. While the decreases in the Oi concentration support the reducibility of some clusters, the presence of Oi in highly reduced materials confirms the irreducibility of some associates. A new defect model, developed with theoretical collaborators, is compared with experimental observations and the Frank and Köstlin model.
520 $a The tin solubility limits in In2O3 were investigated with an exsolution and grain growth study of overdoped nano-ITO for temperatures between 900°C and 1175°C. Transport properties were measured and related to the tin solubilities. The results compared well with literature reports.
590 $a School code: 0163.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Molecular. $3 1018648
690 $a 0609
690 $a 0794
710 2 0 $a Northwestern University. $3 1018161
773 0 $t Dissertation Abstracts International $g 64-04B.
790 $a 0163
790 1 0 $a Mason, Thomas O., $e advisor
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3087916