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Atomic layer deposition of some main...

Harvard University.

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Atomic layer deposition of some main group metals.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Atomic layer deposition of some main group metals./
作者:	Rodriguez, Leonard Neil Jacques.
面頁冊數:	156 p.
附註:	Adviser: R. G. Gordon.
Contained By:	Dissertation Abstracts International69-04B.
標題:	Chemistry, Inorganic. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3312505
ISBN:	9780549617006

Atomic layer deposition of some main group metals.
Rodriguez, Leonard Neil Jacques.

Atomic layer deposition of some main group metals. - 156 p.

Adviser: R. G. Gordon.

Thesis (Ph.D.)--Harvard University, 2008.

The study of oxides which possess very large dielectric constants has gained interest due to their possible applications within the semiconductor industry and the anticipated usage of these materials would benefit from the ability to generate thin conformal films. To this end, precursors were developed to better enable the use of strontium, barium, calcium and bismuth within the atomic layer deposition technique. A generalizable synthesis route to bulky N,N'-dialkylacetamidines was developed to provide ligands for these precursors. Synthetic routes to alkyl derivitized bicyclic guanidines were also developed to yield an alternative ligand system. A preparative route combining di-tert-butylacetamidine with strontium in liquid ammonia was found to provide a strontium precursor free of the lithium contamination which occurred when lithium acetamidinate routes were attempted. The ammonia based route was also found to work for barium and calcium. The sublimation kinetics of these precursor were measured by means of a linear temperature ramp thermogravimetric analysis and also by isothermal sublimation rate measurements. All were found to favourably compare with the commercially available tetra-methylheptadionate analogues. Deposition studies were carried out with the strontium bis-di- tert-butylacetamidinate precursor utilizing a lab-built liquid delivery system to yield strontium titanate films. The saturation growth rate was found to be 1 A/cycle with a saturating exposure of 0.1 torr sec for the strontium precursor. The unannealed films were characterized electrically to yield a dielectric constant of 13, although Rutherford backscattering spectrometry revealed that strontium diffusion into the silicon substrate had occurred. Attempts to prepare bismuth tris-di-tert-butylacetamidinate yielded only a bis-di-tert-butylacetamidinate complex whereby one ligand was in a dianionic state. This precursor also required a liquid delivery system and showed a saturation growth of 0.1 A/cycle at an exposure of 0.02 torr sec. This low growth rate led to bismuth titanate films which were very titanium rich and as a result yielded a low dielectric constant of 13.

ISBN: 9780549617006Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Atomic layer deposition of some main group metals.
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502 $a Thesis (Ph.D.)--Harvard University, 2008.
520 $a The study of oxides which possess very large dielectric constants has gained interest due to their possible applications within the semiconductor industry and the anticipated usage of these materials would benefit from the ability to generate thin conformal films. To this end, precursors were developed to better enable the use of strontium, barium, calcium and bismuth within the atomic layer deposition technique. A generalizable synthesis route to bulky N,N'-dialkylacetamidines was developed to provide ligands for these precursors. Synthetic routes to alkyl derivitized bicyclic guanidines were also developed to yield an alternative ligand system. A preparative route combining di-tert-butylacetamidine with strontium in liquid ammonia was found to provide a strontium precursor free of the lithium contamination which occurred when lithium acetamidinate routes were attempted. The ammonia based route was also found to work for barium and calcium. The sublimation kinetics of these precursor were measured by means of a linear temperature ramp thermogravimetric analysis and also by isothermal sublimation rate measurements. All were found to favourably compare with the commercially available tetra-methylheptadionate analogues. Deposition studies were carried out with the strontium bis-di- tert-butylacetamidinate precursor utilizing a lab-built liquid delivery system to yield strontium titanate films. The saturation growth rate was found to be 1 A/cycle with a saturating exposure of 0.1 torr sec for the strontium precursor. The unannealed films were characterized electrically to yield a dielectric constant of 13, although Rutherford backscattering spectrometry revealed that strontium diffusion into the silicon substrate had occurred. Attempts to prepare bismuth tris-di-tert-butylacetamidinate yielded only a bis-di-tert-butylacetamidinate complex whereby one ligand was in a dianionic state. This precursor also required a liquid delivery system and showed a saturation growth of 0.1 A/cycle at an exposure of 0.02 torr sec. This low growth rate led to bismuth titanate films which were very titanium rich and as a result yielded a low dielectric constant of 13.
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