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Computational analysis of silicon na...

University of Illinois at Urbana-Champaign.

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Computational analysis of silicon nanoelectromechanical systems.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Computational analysis of silicon nanoelectromechanical systems./
作者:	Tang, Zhi.
面頁冊數:	132 p.
附註:	Adviser: Narayana R. Aluru.
Contained By:	Dissertation Abstracts International69-05B.
標題:	Engineering, Mechanical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=3314913
ISBN:	9780549642558

Computational analysis of silicon nanoelectromechanical systems.
Tang, Zhi.

Computational analysis of silicon nanoelectromechanical systems. - 132 p.

Adviser: Narayana R. Aluru.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.

Multiphysics and multiscale analysis of silicon nanoelectromechanical systems (NEMS) become challenging because nanoscale effects, such as quantum effects and defect effects become significant when the characteristic length of NEMS shrinks to nanometers. More physics will be introduced at this length scale. On the other hand, typical NEMS can still contain millions of atoms, where the length scale is in micrometer. The development of multiscale models which can accurately capture the atomistic physics and yet retain the efficiency of continuum classical models becomes necessary.

ISBN: 9780549642558Subjects--Topical Terms:

783786
Engineering, Mechanical.

Computational analysis of silicon nanoelectromechanical systems.
LDR:03431nam 2200301 a 45 001 861522
005 20100719
008 100719s2008 ||||||||||||||||| ||eng d
020 $a 9780549642558
035 $a (UMI)AAI3314913
035 $a AAI3314913
040 $a UMI $c UMI
100 1 $a Tang, Zhi. $3 1029234
245 1 0 $a Computational analysis of silicon nanoelectromechanical systems.
300 $a 132 p.
500 $a Adviser: Narayana R. Aluru.
500 $a Source: Dissertation Abstracts International, Volume: 69-05, Section: B, page: 3237.
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.
520 $a Multiphysics and multiscale analysis of silicon nanoelectromechanical systems (NEMS) become challenging because nanoscale effects, such as quantum effects and defect effects become significant when the characteristic length of NEMS shrinks to nanometers. More physics will be introduced at this length scale. On the other hand, typical NEMS can still contain millions of atoms, where the length scale is in micrometer. The development of multiscale models which can accurately capture the atomistic physics and yet retain the efficiency of continuum classical models becomes necessary.
520 $a We first present physical models and the numerical simulation for coupled electromechanical analysis of silicon NEMS. A nonlinear continuum elastic model with material properties extracted from molecular dynamics (MD) is employed for mechanical analysis. Three electrostatic models - namely, the classical model, the semiclassical model and the quantum-mechanical model, are presented for electrostatic analysis at various length scales. A continuum layer approach is introduced to compute van der Waals forces. The coupling between mechanical, electrostatic, and van der Waals energy domains as well their numerical implementation is described.
520 $a Next, we extend the quasicontinuum (QC) approach for multiscale analysis of silicon nanostructures at finite temperature. Three models, namely the real space quasiharmonic (QHM) model, the local quasiharmonic (LQHM) model, and the reciprocal space quasiharmonic (QHMK) model are investigated. Within this framework, we compute the effect of the temperature and strain on mechanical properties of silicon. We also compute the mechanical response of silicon nanostructures for various external loads. Furthermore, a more efficient multiscale model is presented for mechanical analysis of nanostructures at finite temperature, by combining the QHMK and LQHM models. Finally, we investigate thermodynamic and mechanical properties of silicon nanostructures at finite temperature by using a QHMG approach - where the quasiharmonic approximation is combined with the local phonon density of states (LPDOS). The LPDOS is efficiently calculated from the phonon Green's function by using a recursion technique. Considering different surfaces of a silicon nanowire, we calculate the local thermodynamic properties at finite temperature and observe that the surface effects on the local thermal and mechanical properties are localized to within one or two atomic layers of the nanowire.
590 $a School code: 0090.
650 4 $a Engineering, Mechanical. $3 783786
650 4 $a Physics, Atomic. $3 1029235
690 $a 0548
690 $a 0748
710 2 $a University of Illinois at Urbana-Champaign. $3 626646
773 0 $t Dissertation Abstracts International $g 69-05B.
790 $a 0090
790 1 0 $a Aluru, Narayana R., $e advisor
791 $a Ph.D.
792 $a 2008
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=3314913