語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Silicon carbide pressure sensors and...
~
Case Western Reserve University.
FindBook
Google Book
Amazon
博客來
Silicon carbide pressure sensors and infra-red emitters.
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Silicon carbide pressure sensors and infra-red emitters./
作者:
Chen, Li.
面頁冊數:
203 p.
附註:
Adviser: Mehran Mehregany.
Contained By:
Dissertation Abstracts International68-10B.
標題:
Engineering, Electronics and Electrical. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3285418
ISBN:
9780549290605
Silicon carbide pressure sensors and infra-red emitters.
Chen, Li.
Silicon carbide pressure sensors and infra-red emitters.
- 203 p.
Adviser: Mehran Mehregany.
Thesis (Ph.D.)--Case Western Reserve University, 2008.
The potential of low-stress, heavily-nitrogen-doped, (111)-oriented polycrystalline 3C-silicon carbide (poly-SiC) formed by LPCVD as an advanced MEMS material for harsh-environment and demanding applications was studied through the development and characterization of two MEMS devices: pressure sensor and IR emitter.
ISBN: 9780549290605Subjects--Topical Terms:
626636
Engineering, Electronics and Electrical.
Silicon carbide pressure sensors and infra-red emitters.
LDR
:03650nam 2200289 a 45
001
852735
005
20100630
008
100630s2008 ||||||||||||||||| ||eng d
020
$a
9780549290605
035
$a
(UMI)AAI3285418
035
$a
AAI3285418
040
$a
UMI
$c
UMI
100
1
$a
Chen, Li.
$3
1018741
245
1 0
$a
Silicon carbide pressure sensors and infra-red emitters.
300
$a
203 p.
500
$a
Adviser: Mehran Mehregany.
500
$a
Source: Dissertation Abstracts International, Volume: 68-10, Section: B, page: 6842.
502
$a
Thesis (Ph.D.)--Case Western Reserve University, 2008.
520
$a
The potential of low-stress, heavily-nitrogen-doped, (111)-oriented polycrystalline 3C-silicon carbide (poly-SiC) formed by LPCVD as an advanced MEMS material for harsh-environment and demanding applications was studied through the development and characterization of two MEMS devices: pressure sensor and IR emitter.
520
$a
A research prototype of a low-cost, miniature, mass-producible sensor for measurement of high pressure at operating temperatures of 300°C to 600°C, e.g., in-cylinder engine pressure monitoring applications, was developed. This all-SiC capacitive sensor, i.e., a SiC diaphragm on a SiC substrate, takes advantage of the excellent harsh environment material properties of SiC and was fabricated by surface micromachining. The sensor was packaged in a high-temperature ceramic package and characterized under static pressures of up to ∼5MPa (700psi) and temperatures of up to 574°C in a custom chamber. An instrumentation amplifier integrated circuit was used to convert capacitance into voltage for measurements up to 300°C; beyond 300°C, the capacitance was measured directly from an array of identical sensor elements using a LCZ meter. After high temperature soaking and several tens of temperature/pressure cycles, packaged sensors continued to show stable operation. The sensor was also packaged in a custom probe and successfully demonstrated dynamic pressure monitoring after being inserted into the cylinder head of a research internal combustion engine.
520
$a
A thermal infrared emitter (blackbody) capable of fast thermal cycling was realized for pulsed operation at high frequency using free-standing poly-SiC micro-bridge elements. High emissivity, high thermal conductivity, low thermal mass and excellent mechanical robustness of poly-SiC enable this development. Poly-SiC's peak emission wavelength falls in the range of short wavelength infrared. Devices were pulsed at frequencies up to 100Hz with modulation depth near 50%. Materials analysis examining the surfaces of pre- and postheated emitter elements was performed using Auger electron spectroscopy (AES) and showed extremely low oxidation effect up to about 700°C. Poly-SiC micro-hotplate-based IR emitter platforms, including poly-SiC heating and sensing resistors, were used for a reliability study using an accelerated degradation methodology testing. For comparison, platinum (Pt) was used on another set of otherwise similar SiC micro-hotplates for the heating and sensing elements. Results show that Pt will rapidly degrade when operated above ∼800°C, while poly-SiC is stable up to ∼1100°C. In short, poly-SiC stands out for many higher-temperature applications, thanks to its outstanding material properties and chemical stability.
590
$a
School code: 0042.
650
4
$a
Engineering, Electronics and Electrical.
$3
626636
690
$a
0544
710
2
$a
Case Western Reserve University.
$3
1017714
773
0
$t
Dissertation Abstracts International
$g
68-10B.
790
$a
0042
790
1 0
$a
Mehregany, Mehran,
$e
advisor
791
$a
Ph.D.
792
$a
2008
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3285418
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9069359
電子資源
11.線上閱覽_V
電子書
EB W9069359
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入