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Gan single crystal growth and applic...

Xu, Ke.

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Gan single crystal growth and application

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Gan single crystal growth and application / by Ke Xu ... [et al.].
其他作者:	Xu, Ke.
出版者:	Singapore :Springer Nature Singapore : : 2025.,
面頁冊數:	xiv, 304 p. :ill., digital ;24 cm.
內容註:	Basic Characteristics of GaN Monocrystals -- Basic Characteristics of Gallium Nitride Single Crystal Materials -- Hydride Vapor Phase Epitaxy Method -- Ammonothermal method -- Na-flux method -- Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals -- Progress in Optoelectronic Device Applications -- Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices.
Contained By:	Springer Nature eBook
標題:	Gallium nitride. -
電子資源:	https://doi.org/10.1007/978-981-96-7572-2
ISBN:	9789819675722

Gan single crystal growth and application
Gan single crystal growth and application [electronic resource] /by Ke Xu ... [et al.]. - Singapore :Springer Nature Singapore :2025. - xiv, 304 p. :ill., digital ;24 cm. - Wide bandgap semiconductors,2948-2615. - Wide bandgap semiconductors..

Basic Characteristics of GaN Monocrystals -- Basic Characteristics of Gallium Nitride Single Crystal Materials -- Hydride Vapor Phase Epitaxy Method -- Ammonothermal method -- Na-flux method -- Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals -- Progress in Optoelectronic Device Applications -- Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices.

Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an open and learning attitude and discusses the future development of GaN material growth and device applications with colleagues in the field. It is hoped that the publication of this book can present the frontier development status and prospect of GaN material growth and application to personnel in related fields, hoping to make readers more thoughtful and generate positive innovation points.

ISBN: 9789819675722

Standard No.: 10.1007/978-981-96-7572-2doiSubjects--Topical Terms:

700928
Gallium nitride.

LC Class. No.: TK7871.15.G33

Dewey Class. No.: 621.38152

Gan single crystal growth and application
LDR:02150nmm a2200337 a 4500 001 2414980
003 DE-He213
005 20251001130447.0
006 m d
007 cr nn 008maaau
008 260205s2025 si s 0 eng d
020 $a 9789819675722 $q (electronic bk.)
020 $a 9789819675715 $q (paper)
024 7 $a 10.1007/978-981-96-7572-2 $2 doi
035 $a 978-981-96-7572-2
040 $a GP $c GP
041 1 $a eng $h chi
050 4 $a TK7871.15.G33
072 7 $a TGM $2 bicssc
072 7 $a TEC021020 $2 bisacsh
072 7 $a TGM $2 thema
082 0 4 $a 621.38152 $2 23
090 $a TK7871.15.G33 $b G195 2025
245 0 0 $a Gan single crystal growth and application $h [electronic resource] / $c by Ke Xu ... [et al.].
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2025.
300 $a xiv, 304 p. : $b ill., digital ; $c 24 cm.
490 1 $a Wide bandgap semiconductors, $x 2948-2615
505 0 $a Basic Characteristics of GaN Monocrystals -- Basic Characteristics of Gallium Nitride Single Crystal Materials -- Hydride Vapor Phase Epitaxy Method -- Ammonothermal method -- Na-flux method -- Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals -- Progress in Optoelectronic Device Applications -- Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices.
520 $a Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an open and learning attitude and discusses the future development of GaN material growth and device applications with colleagues in the field. It is hoped that the publication of this book can present the frontier development status and prospect of GaN material growth and application to personnel in related fields, hoping to make readers more thoughtful and generate positive innovation points.
650 0 $a Gallium nitride. $3 700928
650 0 $a Wide gap semiconductors $x Materials. $3 3792032
650 1 4 $a Materials for Devices. $3 3591876
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
650 2 4 $a Microwaves, RF Engineering and Optical Communications. $3 3538694
700 1 $a Xu, Ke. $3 1681601
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer Nature eBook
830 0 $a Wide bandgap semiconductors. $3 3782822
856 4 0 $u https://doi.org/10.1007/978-981-96-7572-2
950 $a Physics and Astronomy (SpringerNature-11651)