東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Linked to FindBook

Google Book

Amazon

博客來

Physics of Gallium Nitride Quantum Wells.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Physics of Gallium Nitride Quantum Wells./
Author:	Jim, Lydia M. W.
Description:	1 online resource (147 pages)
Notes:	Source: Masters Abstracts International, Volume: 81-12.
Contained By:	Masters Abstracts International81-12.
Subject:	Applied physics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27802418click for full text (PQDT)
ISBN:	9781392568705

Physics of Gallium Nitride Quantum Wells.
Jim, Lydia M. W.

Physics of Gallium Nitride Quantum Wells. - 1 online resource (147 pages)

Source: Masters Abstracts International, Volume: 81-12.

Thesis (M.Phil.)--The University of Manchester (United Kingdom), 2018.

Includes bibliographical references

In this thesis, studies performed on InGaN/GaN quantum well (QW) structures using photoluminescence (PL) spectroscopy are presented. Green light-emitting InGaN/GaN QW structures with a varying number of QWs (1, 3, 5 & 10) were investigated with respect to the effect of QW number on internal quantum efficiency (IQE). 10 K transient PL measurements performed on the samples showed that the QW samples have different lifetimes. This suggests that there is a varying level of indium content amongst the samples, different average QW layer thickness between the samples and/or strain relaxation in the 10 QW sample. Comparing the 3 and 5 QW samples, which have similar lifetimes, the 300 K excitation power dependent IQE measurements performed on the samples shows that IQE increases with QW number; this can be attributed due to the increased recapture of escaped thermally excited carriers. Additionally, InGaN/GaN QWs with varying growth temperatures were studied with respect to their high energy band (HEB) and efficiency droop behaviour; the samples grown at higher growth temperatures have a lower defect density and this could affect the HEB and efficiency droop. The HEB is a recently reported feature on the high energy side of the typical emission peak in the PL spectra of InGaN/GaN QWs. 10 K excitation power dependent PL showed that the sample with the highest growth temperature exhibited efficiency droop at a higher excitation compared to the other samples; this may be because efficiency droop is influenced by defect-related recombination. 10 K time-resolved PL showed that the samples have similar HEB behaviour despite their different growth temperatures; monoexponential decay components and inflections which corresponded to the HEB were observed in the time decay measurements. 10 K excitation power varying time decay measurements performed across the PL spectra on one of the samples showed that the lifetime of the carriers at a given emission energy is constant at low carrier densities and decreases at high carrier densities; this reduction in lifetime occurred at a higher carrier density at higher PL emission energies.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9781392568705Subjects--Topical Terms:

3343996
Applied physics.
Subjects--Index Terms:

PhotoluminescenceIndex Terms--Genre/Form:

542853
Electronic books.

Physics of Gallium Nitride Quantum Wells.
LDR:03475nmm a2200373K 4500 001 2361174
005 20231023072102.5
006 m o d
007 cr mn ---uuuuu
008 241011s2018 xx obm 000 0 eng d
020 $a 9781392568705
035 $a (MiAaPQ)AAI27802418
035 $a (MiAaPQ)Manchester_UK54184b44-352a-44fd-8a01-405298fec2f5
035 $a AAI27802418
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Jim, Lydia M. W. $3 3701829
245 1 0 $a Physics of Gallium Nitride Quantum Wells.
264 0 $c 2018
300 $a 1 online resource (147 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 81-12.
500 $a Advisor: Binks, David.
502 $a Thesis (M.Phil.)--The University of Manchester (United Kingdom), 2018.
504 $a Includes bibliographical references
520 $a In this thesis, studies performed on InGaN/GaN quantum well (QW) structures using photoluminescence (PL) spectroscopy are presented. Green light-emitting InGaN/GaN QW structures with a varying number of QWs (1, 3, 5 & 10) were investigated with respect to the effect of QW number on internal quantum efficiency (IQE). 10 K transient PL measurements performed on the samples showed that the QW samples have different lifetimes. This suggests that there is a varying level of indium content amongst the samples, different average QW layer thickness between the samples and/or strain relaxation in the 10 QW sample. Comparing the 3 and 5 QW samples, which have similar lifetimes, the 300 K excitation power dependent IQE measurements performed on the samples shows that IQE increases with QW number; this can be attributed due to the increased recapture of escaped thermally excited carriers. Additionally, InGaN/GaN QWs with varying growth temperatures were studied with respect to their high energy band (HEB) and efficiency droop behaviour; the samples grown at higher growth temperatures have a lower defect density and this could affect the HEB and efficiency droop. The HEB is a recently reported feature on the high energy side of the typical emission peak in the PL spectra of InGaN/GaN QWs. 10 K excitation power dependent PL showed that the sample with the highest growth temperature exhibited efficiency droop at a higher excitation compared to the other samples; this may be because efficiency droop is influenced by defect-related recombination. 10 K time-resolved PL showed that the samples have similar HEB behaviour despite their different growth temperatures; monoexponential decay components and inflections which corresponded to the HEB were observed in the time decay measurements. 10 K excitation power varying time decay measurements performed across the PL spectra on one of the samples showed that the lifetime of the carriers at a given emission energy is constant at low carrier densities and decreases at high carrier densities; this reduction in lifetime occurred at a higher carrier density at higher PL emission energies.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a Applied physics. $3 3343996
650 4 $a Materials science. $3 543314
653 $a Photoluminescence
653 $a Growth temperature
653 $a Efficiency droop
655 7 $a Electronic books. $2 lcsh $3 542853
690 $a 0794
690 $a 0215
710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a The University of Manchester (United Kingdom). $3 3422292
773 0 $t Masters Abstracts International $g 81-12.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27802418 $z click for full text (PQDT)