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The Impact of Seed Layer Structure on the Recrystallization of ECD Cu and its Alloys.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	The Impact of Seed Layer Structure on the Recrystallization of ECD Cu and its Alloys./
作者:	O'Brien, Brendan B.
面頁冊數:	1 online resource (116 pages)
附註:	Source: Dissertations Abstracts International, Volume: 77-07, Section: B.
Contained By:	Dissertations Abstracts International77-07B.
標題:	Nanoscience. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3741400click for full text (PQDT)
ISBN:	9781339336824

The Impact of Seed Layer Structure on the Recrystallization of ECD Cu and its Alloys.
O'Brien, Brendan B.

The Impact of Seed Layer Structure on the Recrystallization of ECD Cu and its Alloys. - 1 online resource (116 pages)

Source: Dissertations Abstracts International, Volume: 77-07, Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2015.

Includes bibliographical references

Despite the significant improvements originally offered by the use of Cu over Al as the interconnect material for semiconductor devices, the continued down-scaling of interconnects has presented significant challenges for semiconductor engineers. As the metal line widths shrink, both the conductivity and reliability of lines decrease due to a stubbornly fine-grained microstructure in narrow lines. Understanding microstructural transformation of the ECD Cu in narrow features which leads to this polygranular microstructure is the first focus of this dissertation. As in the case of Cu films, the underlying seed layer strongly influences progress of transformation. Unlike films, however, the seed layer is not homogenous in patterned substrates, but differs according to the size of the trench and the location within the trench (field, bottom, and sidewall). Based on these findings, and the known influence of texture on the transformation of ECD Cu, a rapid trench initiated transformation process was posited for narrow interconnect lines. Time-resolved TEM observation of the ECD Cu in 48 nm lines during the transformation process confirmed the hypothesis. In fact, the TEM images revealed that the transformation was even faster than anticipated, and that the microstructure of the Cu inside the lines was stagnant after a mere 1.5 hours at room temperature. Studies of the transformation at elevated temperatures found that, despite anneals at 250°C for up to an hour, the grain size distribution for the Cu in narrow lines for all times converged, whether annealed at room temperature or 250°C. These data suggest that process was being driven by the 'consumable' internal energy stored in the as-plated microstructure. This is different than the transformation of the overburden, which is driven by a competition between surface energy and internal stress buildup due to film densification and relief due to the secondary growth of a 200 texture component. Based on these findings, two methods for manipulating the microstructure of the ECD Cu in the narrow lines were explored, including changes to the seed layer through ion implantation, and altering the as-plated Cu microstructure through co-ECD of alloys. The influence on the microstructure and applicability of both of these techniques to BEOL processing will also be discussed.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9781339336824Subjects--Topical Terms:

587832
Nanoscience.
Subjects--Index Terms:

AlloysIndex Terms--Genre/Form:

542853
Electronic books.

The Impact of Seed Layer Structure on the Recrystallization of ECD Cu and its Alloys.
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520 $a Despite the significant improvements originally offered by the use of Cu over Al as the interconnect material for semiconductor devices, the continued down-scaling of interconnects has presented significant challenges for semiconductor engineers. As the metal line widths shrink, both the conductivity and reliability of lines decrease due to a stubbornly fine-grained microstructure in narrow lines. Understanding microstructural transformation of the ECD Cu in narrow features which leads to this polygranular microstructure is the first focus of this dissertation. As in the case of Cu films, the underlying seed layer strongly influences progress of transformation. Unlike films, however, the seed layer is not homogenous in patterned substrates, but differs according to the size of the trench and the location within the trench (field, bottom, and sidewall). Based on these findings, and the known influence of texture on the transformation of ECD Cu, a rapid trench initiated transformation process was posited for narrow interconnect lines. Time-resolved TEM observation of the ECD Cu in 48 nm lines during the transformation process confirmed the hypothesis. In fact, the TEM images revealed that the transformation was even faster than anticipated, and that the microstructure of the Cu inside the lines was stagnant after a mere 1.5 hours at room temperature. Studies of the transformation at elevated temperatures found that, despite anneals at 250°C for up to an hour, the grain size distribution for the Cu in narrow lines for all times converged, whether annealed at room temperature or 250°C. These data suggest that process was being driven by the 'consumable' internal energy stored in the as-plated microstructure. This is different than the transformation of the overburden, which is driven by a competition between surface energy and internal stress buildup due to film densification and relief due to the secondary growth of a 200 texture component. Based on these findings, two methods for manipulating the microstructure of the ECD Cu in the narrow lines were explored, including changes to the seed layer through ion implantation, and altering the as-plated Cu microstructure through co-ECD of alloys. The influence on the microstructure and applicability of both of these techniques to BEOL processing will also be discussed.
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