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Reliability study of gan-based high electron mobility transistors.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Reliability study of gan-based high electron mobility transistors./
作者:	Liu, Lu.
面頁冊數:	1 online resource (198 pages)
附註:	Source: Dissertations Abstracts International, Volume: 76-01, Section: B.
Contained By:	Dissertations Abstracts International76-01B.
標題:	Chemical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3584478click for full text (PQDT)
ISBN:	9781321048759

Reliability study of gan-based high electron mobility transistors.
Liu, Lu.

Reliability study of gan-based high electron mobility transistors. - 1 online resource (198 pages)

Source: Dissertations Abstracts International, Volume: 76-01, Section: B.

Thesis (Ph.D.)--University of Florida, 2013.

Includes bibliographical references

Compound semiconductors are III-V semiconductor nitrides, such as AlN, GaN and AlGaN, which have attracted plenty of attention due to their extraordinary material properties, such as high mobility, high saturation velocity and power density, and become a promising alternative for microwave power device. They have demonstrated excellent performance in such applications as UV detectors, UV and visible light emitting diodes (LEDs), microwave power amplifications, satellite, radar and wireless communication systems. However, the main impediment of this technology is lack of reliability. In order to improve the reliability of GaN HEMTs technology, it is essentially important to understand the nature of device degradation. In this dissertation, the effects of source field plates, gate metallization, passivation layers, buffer structures and proton irradiation on the dc/rf performance and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) under off-state stress conditions were investigated using stepstress cycling. The source field plate alleviated the peak electrical at drain side of gate edge and enhanced the drain breakdown voltage from 55V to 155V and the critical voltage (Vcri) for off-state gate stress from 40V to 65V, relative to devices without the field plate. The critical voltage of electrical step-stress was increased more than 100% for HEMTs with Pt/Ti/Au gate metallization as compared to HEMTs with Ni/Au gate metallization. As compared to Al 2O3 and HfO2, SiNx was found to be the most effective in reducing current collapse and also reduced fT and fMax through additional parasitic capacitance. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50 and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The dependence of dc and rf characteristics and reliability of GaN-based HEMTs on proton irradiation energies and doses were examined. GaN-based HEMTs showed a remarkable resistance to high energy proton-induced degradation and improved device reliability. In addition, temperature dependent subthreshold slope measurement was developed to study the effect of off-state electrical stress on the trap densities and two traps with different activation energies at temperature range of 300-493K and 493-573K were identified. Finally, The laser micromachining of SiC by 193nm ArF excimer laser produced much higher etch rates (229-870 μm/min) than conventional dry etching (0.2-1.3 im/min) and the via entry can be tapered to facilitate subsequent metallization.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9781321048759Subjects--Topical Terms:

560457
Chemical engineering.
Subjects--Index Terms:

Field effect transistorsIndex Terms--Genre/Form:

542853
Electronic books.

Reliability study of gan-based high electron mobility transistors.
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504 $a Includes bibliographical references
520 $a Compound semiconductors are III-V semiconductor nitrides, such as AlN, GaN and AlGaN, which have attracted plenty of attention due to their extraordinary material properties, such as high mobility, high saturation velocity and power density, and become a promising alternative for microwave power device. They have demonstrated excellent performance in such applications as UV detectors, UV and visible light emitting diodes (LEDs), microwave power amplifications, satellite, radar and wireless communication systems. However, the main impediment of this technology is lack of reliability. In order to improve the reliability of GaN HEMTs technology, it is essentially important to understand the nature of device degradation. In this dissertation, the effects of source field plates, gate metallization, passivation layers, buffer structures and proton irradiation on the dc/rf performance and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) under off-state stress conditions were investigated using stepstress cycling. The source field plate alleviated the peak electrical at drain side of gate edge and enhanced the drain breakdown voltage from 55V to 155V and the critical voltage (Vcri) for off-state gate stress from 40V to 65V, relative to devices without the field plate. The critical voltage of electrical step-stress was increased more than 100% for HEMTs with Pt/Ti/Au gate metallization as compared to HEMTs with Ni/Au gate metallization. As compared to Al 2O3 and HfO2, SiNx was found to be the most effective in reducing current collapse and also reduced fT and fMax through additional parasitic capacitance. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50 and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The dependence of dc and rf characteristics and reliability of GaN-based HEMTs on proton irradiation energies and doses were examined. GaN-based HEMTs showed a remarkable resistance to high energy proton-induced degradation and improved device reliability. In addition, temperature dependent subthreshold slope measurement was developed to study the effect of off-state electrical stress on the trap densities and two traps with different activation energies at temperature range of 300-493K and 493-573K were identified. Finally, The laser micromachining of SiC by 193nm ArF excimer laser produced much higher etch rates (229-870 μm/min) than conventional dry etching (0.2-1.3 im/min) and the via entry can be tapered to facilitate subsequent metallization.
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