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Reliability Characterization of a Low-K Dielectric Using Its Magnetoresistance as a Diagnostic Tool.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Reliability Characterization of a Low-K Dielectric Using Its Magnetoresistance as a Diagnostic Tool./
作者:	Williams, Philip A.
面頁冊數:	1 online resource (132 pages)
附註:	Source: Dissertations Abstracts International, Volume: 83-06, Section: B.
Contained By:	Dissertations Abstracts International83-06B.
標題:	Physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28862694click for full text (PQDT)
ISBN:	9798496567817

Reliability Characterization of a Low-K Dielectric Using Its Magnetoresistance as a Diagnostic Tool.
Williams, Philip A.

Reliability Characterization of a Low-K Dielectric Using Its Magnetoresistance as a Diagnostic Tool. - 1 online resource (132 pages)

Source: Dissertations Abstracts International, Volume: 83-06, Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2021.

Includes bibliographical references

The introduction of low dielectric constant materials within the integrated circuit (IC) chip technology industry was a concerted effort to decrease the resistance-capacitance (RC) time delay inherent within the dielectric materials used as insulators. This stems from a demand for greater device density per IC chip and decreased feature sizes but is fast becoming a reliability issue. Concomitant with the demand for decreased feature sizes, also in adherence with Moore's Law (which states that the number of devices on a die doubles every two years), is a reduction in device speed and performance due to device intra-level interconnection signal delays. As a result of this demand, the inclusion of low-k dielectric materials in semiconductor manufacturing processes has been instrumental in achieving these goals.Device reliability predictions, material transport properties, and failure analysis of the low-k dielectric material SiCOH using its negative magnetoresistance is presented herein. In dielectric materials, the two basic inherent conduction mechanisms are bulk-limited and electrode-limited conduction, wherein the former encompasses the electrical properties of the bulk dielectric material and the latter the physical properties of the electrode-dielectric interface. The magnitude of the magnetoresistance is related to the density of defects at the interface and within the bulk of the dielectric material. Moreover, the mean-free path (MFP) of carriers in the bulk dielectric material within the conduction band is increased in the presence of an applied external magnetic field due to the electron spin-polarization cooperative effect resulting in the suppression of the formation of singlet states and trap-mediated singlet state pair hopping due to relaxation time spin constraints supporting triplet state carrier hopping transport with a concomitant increase in current in the conduction band. Interelectrode charge carrier conduction due to defect trap states within the bulk of the material leading to dielectric breakdown is a major detractor in insulators used in industry. In this work a trap-assisted negative magnetoresistance is characterized, and a correlation is shown between the negative magnetoresistance in the amorphous dielectric material SiCOH (a-SiCOH) and failure rates in device accelerated bias-temperature stress (BTS) testing in time-dependent dielectric breakdown (TDDB) material lifetimes.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798496567817Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

Dielectric breakdownIndex Terms--Genre/Form:

542853
Electronic books.

Reliability Characterization of a Low-K Dielectric Using Its Magnetoresistance as a Diagnostic Tool.
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245 1 0 $a Reliability Characterization of a Low-K Dielectric Using Its Magnetoresistance as a Diagnostic Tool.
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500 $a Source: Dissertations Abstracts International, Volume: 83-06, Section: B.
500 $a Advisor: Lloyd, James R.
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504 $a Includes bibliographical references
520 $a The introduction of low dielectric constant materials within the integrated circuit (IC) chip technology industry was a concerted effort to decrease the resistance-capacitance (RC) time delay inherent within the dielectric materials used as insulators. This stems from a demand for greater device density per IC chip and decreased feature sizes but is fast becoming a reliability issue. Concomitant with the demand for decreased feature sizes, also in adherence with Moore's Law (which states that the number of devices on a die doubles every two years), is a reduction in device speed and performance due to device intra-level interconnection signal delays. As a result of this demand, the inclusion of low-k dielectric materials in semiconductor manufacturing processes has been instrumental in achieving these goals.Device reliability predictions, material transport properties, and failure analysis of the low-k dielectric material SiCOH using its negative magnetoresistance is presented herein. In dielectric materials, the two basic inherent conduction mechanisms are bulk-limited and electrode-limited conduction, wherein the former encompasses the electrical properties of the bulk dielectric material and the latter the physical properties of the electrode-dielectric interface. The magnitude of the magnetoresistance is related to the density of defects at the interface and within the bulk of the dielectric material. Moreover, the mean-free path (MFP) of carriers in the bulk dielectric material within the conduction band is increased in the presence of an applied external magnetic field due to the electron spin-polarization cooperative effect resulting in the suppression of the formation of singlet states and trap-mediated singlet state pair hopping due to relaxation time spin constraints supporting triplet state carrier hopping transport with a concomitant increase in current in the conduction band. Interelectrode charge carrier conduction due to defect trap states within the bulk of the material leading to dielectric breakdown is a major detractor in insulators used in industry. In this work a trap-assisted negative magnetoresistance is characterized, and a correlation is shown between the negative magnetoresistance in the amorphous dielectric material SiCOH (a-SiCOH) and failure rates in device accelerated bias-temperature stress (BTS) testing in time-dependent dielectric breakdown (TDDB) material lifetimes.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
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650 4 $a Nanoscience. $3 587832
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653 $a Dielectric materials
653 $a Failure analysis
653 $a Hyperfine interaction
653 $a Magnetoresistance
653 $a Materials reliability
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710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Science. $3 1685320
773 0 $t Dissertations Abstracts International $g 83-06B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28862694 $z click for full text (PQDT)