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Study of Low Doping in Organic Devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Study of Low Doping in Organic Devices./
作者:	Radha Krishnan, Raj Kishen.
面頁冊數:	1 online resource (189 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-08, Section: B.
Contained By:	Dissertations Abstracts International84-08B.
標題:	Physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30303162click for full text (PQDT)
ISBN:	9798363523830

Study of Low Doping in Organic Devices.
Radha Krishnan, Raj Kishen.

Study of Low Doping in Organic Devices. - 1 online resource (189 pages)

Source: Dissertations Abstracts International, Volume: 84-08, Section: B.

Thesis (Ph.D.)--Kent State University, 2022.

Includes bibliographical references

Transistors are the fundamental building blocks of electronic circuits. Organic transistors have garnered attention due their potential for use in flexible electronics. The materials can be directly processed on flexible substrates at low temperatures making them suitable for applications such as flexible displays and conformal sensors. For practical use in large scale applications organic transistors need to overcome hurdles such as high contact resistance, poor stability and reproducibility. Doping is a key technology that has been implemented to define majority and minority charge carriers, tune the fermi level and produce stable, high performing devices. However, use of doping in organic transistors has been restricted due to low doping efficiency and poor understanding of mechanisms involved. In this work the effect of low doping in organic devices is studied systematically and guidelines are established for effective design/selection of organic materials to achieve effective doping with high efficiency. Ambipolar transistors with high hole and electron current and high ON/OFF ratio are required to implement complementary circuits, which form the backbone of logic applications. DNTT based doped OFETs with excellent hole and electron current are discussed and strategies are discussed to control the spread in transistor parameters like threshold voltage.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798363523830Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

DopingIndex Terms--Genre/Form:

542853
Electronic books.

Study of Low Doping in Organic Devices.
LDR:02694nmm a2200397K 4500 001 2358933
005 20230830051524.5
006 m o d
007 cr mn ---uuuuu
008 241011s2022 xx obm 000 0 eng d
020 $a 9798363523830
035 $a (MiAaPQ)AAI30303162
035 $a AAI30303162
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Radha Krishnan, Raj Kishen. $3 3699483
245 1 0 $a Study of Low Doping in Organic Devices.
264 0 $c 2022
300 $a 1 online resource (189 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 84-08, Section: B.
500 $a Advisor: Lussem, Bjorn.
502 $a Thesis (Ph.D.)--Kent State University, 2022.
504 $a Includes bibliographical references
520 $a Transistors are the fundamental building blocks of electronic circuits. Organic transistors have garnered attention due their potential for use in flexible electronics. The materials can be directly processed on flexible substrates at low temperatures making them suitable for applications such as flexible displays and conformal sensors. For practical use in large scale applications organic transistors need to overcome hurdles such as high contact resistance, poor stability and reproducibility. Doping is a key technology that has been implemented to define majority and minority charge carriers, tune the fermi level and produce stable, high performing devices. However, use of doping in organic transistors has been restricted due to low doping efficiency and poor understanding of mechanisms involved. In this work the effect of low doping in organic devices is studied systematically and guidelines are established for effective design/selection of organic materials to achieve effective doping with high efficiency. Ambipolar transistors with high hole and electron current and high ON/OFF ratio are required to implement complementary circuits, which form the backbone of logic applications. DNTT based doped OFETs with excellent hole and electron current are discussed and strategies are discussed to control the spread in transistor parameters like threshold voltage.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a Physics. $3 516296
650 4 $a Physical chemistry. $3 1981412
650 4 $a Organic chemistry. $3 523952
653 $a Doping
653 $a Organic transistors
653 $a Fullerene
653 $a Doping efficiency
653 $a Ambipolar
655 7 $a Electronic books. $2 lcsh $3 542853
690 $a 0605
690 $a 0490
690 $a 0494
710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a Kent State University. $b College of Arts and Sciences / Department of Physics. $3 3431437
773 0 $t Dissertations Abstracts International $g 84-08B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30303162 $z click for full text (PQDT)