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2000-Atmosphere Bulk-Type Dual-Cavity MEMS Pressure Sensor.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	2000-Atmosphere Bulk-Type Dual-Cavity MEMS Pressure Sensor./
作者:	Lin, Dequan.
面頁冊數:	1 online resource (110 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-11, Section: B.
Contained By:	Dissertations Abstracts International84-11B.
標題:	Silicon. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30395939click for full text (PQDT)
ISBN:	9798379468491

2000-Atmosphere Bulk-Type Dual-Cavity MEMS Pressure Sensor.
Lin, Dequan.

2000-Atmosphere Bulk-Type Dual-Cavity MEMS Pressure Sensor. - 1 online resource (110 pages)

Source: Dissertations Abstracts International, Volume: 84-11, Section: B.

Thesis (Ph.D.)--Hong Kong University of Science and Technology (Hong Kong), 2022.

Includes bibliographical references

Many industrial, automotive, and oil exploration applications demand the measurement of pressure higher than 100 MPa. However, conventional diaphragm-type MEMS pressure sensors are not ideal for such applications. The representative MEMS high-pressure sensors are based on the piezoresistive principle and involves bonding of heterogeneous materials which are burdened by the inherent difference between the coefficient of thermal expansion of dissimilar materials. An all-silicon bulk-type single-cavity sensor that does not require fragile deformable diaphragm-like micro-structures has been previously developed and characterized up to 200 MPa. Incorporating a half Wheatstone bridge consisting of two sensing piezoresistors and two relatively constant reference resistors to measure the biaxial compression induced by a hydrostatic pressure load, the sensor exhibits a sensitivity of 79 μV/V/MPa. However, the sensitivity of such bulk-type, single-cavity design was significantly hindered by tthe bulging of the surface on which the piezoresistors were constructed. To solve this, a bulk-type, dual-cavity pressure sensor with an improved construction and a new layout design of the piezoresistors was proposed and realized. The dual-cavity construction was expected to eliminate the surface bulging and, moreover, induce stress amplification to further enhance pressure sensitivity. The measurement results shows that the dual-cavity sensor exhibits a ~2.5-times higher sensitivity than the single-cavity version. To further improve the performance of the dual-cavity sensor, a sensor incorporating stress modifying trenches was developed. With active piezoresistors aligned to orientations with stress components exhibiting opposite signs, a fully active Wheatstone bridge can be realized. This leads to a significant increase in the sensitivity of the pressure sensor to 513 μV/V/MPa over the same pressure range, which is 6.5 times the sensitivity for the initial single-cavity design. Besides the improvement of mechanical design, the electrical approaches were also explored. A monolithic integrated high-pressure MEMS pressure sensor with integrated circuits built by metal oxide thin film transistors as proposed and realized, yielding a voltage gain of ~2.8 compared with the raw output of the MEMS pressure sensor. The result demonstrates the potential of a TFT application-specific integrated circuit (ASIC) to be monolithically integrated with the MEMS device for boosting the pressure sensitivity and other signal-conditioning applications.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798379468491Subjects--Topical Terms:

669429
Silicon.
Index Terms--Genre/Form:

542853
Electronic books.

2000-Atmosphere Bulk-Type Dual-Cavity MEMS Pressure Sensor.
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020 $a 9798379468491
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035 $a (MiAaPQ)HongKongSciTech_991013106350803412
035 $a AAI30395939
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Lin, Dequan. $3 3698458
245 1 0 $a 2000-Atmosphere Bulk-Type Dual-Cavity MEMS Pressure Sensor.
264 0 $c 2022
300 $a 1 online resource (110 pages)
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337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 84-11, Section: B.
500 $a Advisor: Wong, Man.
502 $a Thesis (Ph.D.)--Hong Kong University of Science and Technology (Hong Kong), 2022.
504 $a Includes bibliographical references
520 $a Many industrial, automotive, and oil exploration applications demand the measurement of pressure higher than 100 MPa. However, conventional diaphragm-type MEMS pressure sensors are not ideal for such applications. The representative MEMS high-pressure sensors are based on the piezoresistive principle and involves bonding of heterogeneous materials which are burdened by the inherent difference between the coefficient of thermal expansion of dissimilar materials. An all-silicon bulk-type single-cavity sensor that does not require fragile deformable diaphragm-like micro-structures has been previously developed and characterized up to 200 MPa. Incorporating a half Wheatstone bridge consisting of two sensing piezoresistors and two relatively constant reference resistors to measure the biaxial compression induced by a hydrostatic pressure load, the sensor exhibits a sensitivity of 79 μV/V/MPa. However, the sensitivity of such bulk-type, single-cavity design was significantly hindered by tthe bulging of the surface on which the piezoresistors were constructed. To solve this, a bulk-type, dual-cavity pressure sensor with an improved construction and a new layout design of the piezoresistors was proposed and realized. The dual-cavity construction was expected to eliminate the surface bulging and, moreover, induce stress amplification to further enhance pressure sensitivity. The measurement results shows that the dual-cavity sensor exhibits a ~2.5-times higher sensitivity than the single-cavity version. To further improve the performance of the dual-cavity sensor, a sensor incorporating stress modifying trenches was developed. With active piezoresistors aligned to orientations with stress components exhibiting opposite signs, a fully active Wheatstone bridge can be realized. This leads to a significant increase in the sensitivity of the pressure sensor to 513 μV/V/MPa over the same pressure range, which is 6.5 times the sensitivity for the initial single-cavity design. Besides the improvement of mechanical design, the electrical approaches were also explored. A monolithic integrated high-pressure MEMS pressure sensor with integrated circuits built by metal oxide thin film transistors as proposed and realized, yielding a voltage gain of ~2.8 compared with the raw output of the MEMS pressure sensor. The result demonstrates the potential of a TFT application-specific integrated circuit (ASIC) to be monolithically integrated with the MEMS device for boosting the pressure sensitivity and other signal-conditioning applications.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a Silicon. $3 669429
650 4 $a Receivers & amplifiers. $3 3559205
650 4 $a Integrated circuits. $3 584067
650 4 $a Success. $3 518195
650 4 $a Semiconductors. $3 516162
650 4 $a Glass substrates. $3 3683629
650 4 $a Titanium. $3 3315393
650 4 $a Sensors. $3 3549539
650 4 $a Symmetry. $3 536815
650 4 $a Aluminum. $3 735071
650 4 $a Design. $3 518875
650 4 $a Pressure transducers. $3 3683584
650 4 $a Batch processing. $3 3680543
650 4 $a Deformation. $2 lcstt $3 3267001
650 4 $a Transistors. $3 713271
650 4 $a Packaging. $3 585030
650 4 $a Bridges. $3 868720
650 4 $a Geometry. $3 517251
650 4 $a Electrical engineering. $3 649834
650 4 $a Materials science. $3 543314
650 4 $a Mechanics. $3 525881
655 7 $a Electronic books. $2 lcsh $3 542853
690 $a 0389
690 $a 0549
690 $a 0544
690 $a 0794
690 $a 0346
710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a Hong Kong University of Science and Technology (Hong Kong). $3 1022235
773 0 $t Dissertations Abstracts International $g 84-11B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30395939 $z click for full text (PQDT)