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The O2 Oxidation Kinetics of Individual Carbon and Silicon Nanoparticles at High Temperatures.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	The O2 Oxidation Kinetics of Individual Carbon and Silicon Nanoparticles at High Temperatures./
作者:	Rodriguez, Daniel J.
面頁冊數:	1 online resource (357 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-05, Section: B.
Contained By:	Dissertations Abstracts International84-05B.
標題:	Physical chemistry. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28964111click for full text (PQDT)
ISBN:	9798357570697

The O2 Oxidation Kinetics of Individual Carbon and Silicon Nanoparticles at High Temperatures.
Rodriguez, Daniel J.

The O2 Oxidation Kinetics of Individual Carbon and Silicon Nanoparticles at High Temperatures. - 1 online resource (357 pages)

Source: Dissertations Abstracts International, Volume: 84-05, Section: B.

Thesis (Ph.D.)--The University of Utah, 2022.

Includes bibliographical references

The high temperature surface chemistry of carbon and silicon nanoparticles (NPs) is studied using nanoparticle mass spectrometry. The technique involves isolation of single NPs inside a split-ring electrode ion trap and taking concurrent measurements of an NP's mass (M) and temperature (TNP) every 30 seconds. This allows monitoring of kinetic activity via ∆M as the NP is held in either Ar or Ar + O2 atmospheres.For graphitic NPs, O2-oxidation was studied at TNP = 1200 - 2200 K. Etching efficiencies (EEO2) peaked at 1200 - 1500 K and decreased significantly at TNP > 2000 K. The variation in EEO2 was attributed to the heterogeneity within the NP feedstock. In addition, EEO2 evolved non-monotonically with time and decreased by factors of ~10 - 300 signaling structural evolution in the single NP. Optical properties such as emissivity and absorption were also observed to evolve with the accompanying mass loss events. O2 oxidation experiments were then completed on carbon black, graphene oxide, diamond, and carbon nano-onions. The initial EEO2 values for all materials were ~10-3 Da/O2 collision. For experiments held at constant conditions, EEO2 always dropped by factors >100, however, the total time and mass loss was material dependent.Last, silicon, silica, and silicon carbide NPs were studied at TNP = 1200 - 2300 K. Sublimation was observed at TNP > 1700 K, and for oxidation, EEO2 peaked at 1200 - 1400 K, approaching zero after the NPs had lost >50% of their masses. This observation is explained by the net effect of both "active" and "passive" oxidation reactions.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798357570697Subjects--Topical Terms:

1981412
Physical chemistry.
Subjects--Index Terms:

CarbonIndex Terms--Genre/Form:

542853
Electronic books.

The O2 Oxidation Kinetics of Individual Carbon and Silicon Nanoparticles at High Temperatures.
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520 $a The high temperature surface chemistry of carbon and silicon nanoparticles (NPs) is studied using nanoparticle mass spectrometry. The technique involves isolation of single NPs inside a split-ring electrode ion trap and taking concurrent measurements of an NP's mass (M) and temperature (TNP) every 30 seconds. This allows monitoring of kinetic activity via ∆M as the NP is held in either Ar or Ar + O2 atmospheres.For graphitic NPs, O2-oxidation was studied at TNP = 1200 - 2200 K. Etching efficiencies (EEO2) peaked at 1200 - 1500 K and decreased significantly at TNP > 2000 K. The variation in EEO2 was attributed to the heterogeneity within the NP feedstock. In addition, EEO2 evolved non-monotonically with time and decreased by factors of ~10 - 300 signaling structural evolution in the single NP. Optical properties such as emissivity and absorption were also observed to evolve with the accompanying mass loss events. O2 oxidation experiments were then completed on carbon black, graphene oxide, diamond, and carbon nano-onions. The initial EEO2 values for all materials were ~10-3 Da/O2 collision. For experiments held at constant conditions, EEO2 always dropped by factors >100, however, the total time and mass loss was material dependent.Last, silicon, silica, and silicon carbide NPs were studied at TNP = 1200 - 2300 K. Sublimation was observed at TNP > 1700 K, and for oxidation, EEO2 peaked at 1200 - 1400 K, approaching zero after the NPs had lost >50% of their masses. This observation is explained by the net effect of both "active" and "passive" oxidation reactions.
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