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Fundamental Aspects of Exchange Bias Effect in (Ni/co)/NixMn 100-x /(Ni/Co) Bilayers, Trilayers and Multilayers On Cu3Au(001).

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Fundamental Aspects of Exchange Bias Effect in (Ni/co)/NixMn 100-x /(Ni/Co) Bilayers, Trilayers and Multilayers On Cu3Au(001)./
作者:	Shinwari, Tauqir.
面頁冊數:	1 online resource (140 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-04, Section: B.
Contained By:	Dissertations Abstracts International84-04B.
標題:	Crystal structure. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29341392click for full text (PQDT)
ISBN:	9798352602089

Fundamental Aspects of Exchange Bias Effect in (Ni/co)/NixMn 100-x /(Ni/Co) Bilayers, Trilayers and Multilayers On Cu3Au(001).
Shinwari, Tauqir.

Fundamental Aspects of Exchange Bias Effect in (Ni/co)/NixMn 100-x /(Ni/Co) Bilayers, Trilayers and Multilayers On Cu3Au(001). - 1 online resource (140 pages)

Source: Dissertations Abstracts International, Volume: 84-04, Section: B.

Thesis (Ph.D.)--Freie Universitaet Berlin (Germany), 2022.

Includes bibliographical references

This study is concerned with three broad topics facing the technological application of exchange bias (EB). The antiferromagnetism of single-crystalline NixMn100−x ultrathin films in contact with ferromagnetic (FM) Co (Ni/Co) film(s) in bilayers, trilayers and multilayers on Cu3Au(001) deposited under ultrahigh vacuum conditions, is investigated by means of magneto-optical Kerr effect (MOKE). In the first study, the aim is to identify the contribution of interface and bulk antiferromagnetic (AFM) spins to the EB. Structural or chemical defects are deliberately introduced at the surface of the AFM layer or at a certain depth inside the AFM layer. The creation of defects in the bulk of the AFM layer enhances the magnitude of EB and its blocking temperature. It is also observed that the deeper the insertion of defects, the higher the value of the EB field and coercivity. These findings are discussed as the effect of additional pinning centers in the bulk of the AFM layer. In the second problem, we compare artificially layered [Ni/Mn] films with the corresponding disordered NixMn100−x alloys with almost the same Ni/Mn ratio and the same film thickness. It is revealed that the perpendicular interatomic lattice distance is decreased in the artificially layered [Ni/Mn] samples. These changes in the structure are discussed as the buckling or reconstruction of Mn atoms (probably Ni atoms too) in the bulk and also at the surface, which causes higher coercivity, EB-field, and stronger interlayer exchange coupling. In the third project, we unveil that a cover of Mn films that exhibit contracted vertical-to-in-plane lattice constant ratio and expanded structures at different thickness levels, induces perpendicular magnetic anisotropy (PMA) in an FM layer, confirming that the interlayer distance in the AFM can be a crucial parameter for establishing perpendicular magnetization.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798352602089Subjects--Topical Terms:

3561040
Crystal structure.
Index Terms--Genre/Form:

542853
Electronic books.

Fundamental Aspects of Exchange Bias Effect in (Ni/co)/NixMn 100-x /(Ni/Co) Bilayers, Trilayers and Multilayers On Cu3Au(001).
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500 $a Source: Dissertations Abstracts International, Volume: 84-04, Section: B.
500 $a Advisor: Kuch, Wolfgang.
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504 $a Includes bibliographical references
520 $a This study is concerned with three broad topics facing the technological application of exchange bias (EB). The antiferromagnetism of single-crystalline NixMn100−x ultrathin films in contact with ferromagnetic (FM) Co (Ni/Co) film(s) in bilayers, trilayers and multilayers on Cu3Au(001) deposited under ultrahigh vacuum conditions, is investigated by means of magneto-optical Kerr effect (MOKE). In the first study, the aim is to identify the contribution of interface and bulk antiferromagnetic (AFM) spins to the EB. Structural or chemical defects are deliberately introduced at the surface of the AFM layer or at a certain depth inside the AFM layer. The creation of defects in the bulk of the AFM layer enhances the magnitude of EB and its blocking temperature. It is also observed that the deeper the insertion of defects, the higher the value of the EB field and coercivity. These findings are discussed as the effect of additional pinning centers in the bulk of the AFM layer. In the second problem, we compare artificially layered [Ni/Mn] films with the corresponding disordered NixMn100−x alloys with almost the same Ni/Mn ratio and the same film thickness. It is revealed that the perpendicular interatomic lattice distance is decreased in the artificially layered [Ni/Mn] samples. These changes in the structure are discussed as the buckling or reconstruction of Mn atoms (probably Ni atoms too) in the bulk and also at the surface, which causes higher coercivity, EB-field, and stronger interlayer exchange coupling. In the third project, we unveil that a cover of Mn films that exhibit contracted vertical-to-in-plane lattice constant ratio and expanded structures at different thickness levels, induces perpendicular magnetic anisotropy (PMA) in an FM layer, confirming that the interlayer distance in the AFM can be a crucial parameter for establishing perpendicular magnetization.
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