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Engineering Quantum Defects in Diamond for Quantum Networks.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Engineering Quantum Defects in Diamond for Quantum Networks./
作者:	Zhang, Zihuai.
面頁冊數:	1 online resource (294 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-06, Section: B.
Contained By:	Dissertations Abstracts International84-06B.
標題:	Quantum physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29399003click for full text (PQDT)
ISBN:	9798357573346

Engineering Quantum Defects in Diamond for Quantum Networks.
Zhang, Zihuai.

Engineering Quantum Defects in Diamond for Quantum Networks. - 1 online resource (294 pages)

Source: Dissertations Abstracts International, Volume: 84-06, Section: B.

Thesis (Ph.D.)--Princeton University, 2022.

Includes bibliographical references

Quantum defects in the solid state, also known as color centers, are promising platforms for quantum technologies. As solid-state objects, they can be integrated into devices in a scalable manner. As atomic systems, they have rich energy level structures and inter-level optical and spin transitions which allow for versatile, high fidelity control. In this thesis, we describe detailed studies of color centers in diamond through a combination of experimental characterization, materials engineering and first principle studies.Most of the studies in this thesis are based on the neutral silicon vacancy centers (SiV0) in diamond, a novel color center which is inaccessible in undoped diamonds. We use Fermi level engineering via careful materials preparation or novel doping techniques to stabilize SiV0 with high efficiency. We demonstrate that SiV0 centers have long spin coherence times, and narrow, stable optical transitions at cryogenic temperatures, making it a suitable platform for quantum memory applications. With detailed excited state spectroscopy, we identify higher-lying bound exciton states in SiV0. We demonstrate optically detected magnetic resonance in SiV0 centers via resonant excitation through their bound exciton transitions and zero-phonon-line transitions. We isolate single SiV0 centers, and perform characterization on their optical and spin dynamics. We discuss materials characterization techniques and treatment methods to understand the variation of formation yield of SiV0 centers in boron doped diamonds.The techniques developed for SiV0 centers are broadly applicable to other color centers. Towards the end of this thesis, we apply those experimental techniques to characterize a newly identified telecom O-band color center in diamond. We study the optical properties of the telecom color center using photoluminescence, absorption, and transient absorption spectroscopy. We discuss its prospective for quantum applications.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798357573346Subjects--Topical Terms:

726746
Quantum physics.
Subjects--Index Terms:

Color centers in diamondIndex Terms--Genre/Form:

542853
Electronic books.

Engineering Quantum Defects in Diamond for Quantum Networks.
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504 $a Includes bibliographical references
520 $a Quantum defects in the solid state, also known as color centers, are promising platforms for quantum technologies. As solid-state objects, they can be integrated into devices in a scalable manner. As atomic systems, they have rich energy level structures and inter-level optical and spin transitions which allow for versatile, high fidelity control. In this thesis, we describe detailed studies of color centers in diamond through a combination of experimental characterization, materials engineering and first principle studies.Most of the studies in this thesis are based on the neutral silicon vacancy centers (SiV0) in diamond, a novel color center which is inaccessible in undoped diamonds. We use Fermi level engineering via careful materials preparation or novel doping techniques to stabilize SiV0 with high efficiency. We demonstrate that SiV0 centers have long spin coherence times, and narrow, stable optical transitions at cryogenic temperatures, making it a suitable platform for quantum memory applications. With detailed excited state spectroscopy, we identify higher-lying bound exciton states in SiV0. We demonstrate optically detected magnetic resonance in SiV0 centers via resonant excitation through their bound exciton transitions and zero-phonon-line transitions. We isolate single SiV0 centers, and perform characterization on their optical and spin dynamics. We discuss materials characterization techniques and treatment methods to understand the variation of formation yield of SiV0 centers in boron doped diamonds.The techniques developed for SiV0 centers are broadly applicable to other color centers. Towards the end of this thesis, we apply those experimental techniques to characterize a newly identified telecom O-band color center in diamond. We study the optical properties of the telecom color center using photoluminescence, absorption, and transient absorption spectroscopy. We discuss its prospective for quantum applications.
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538 $a Mode of access: World Wide Web
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653 $a Quantum networks
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