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Engineering Hybrid Interfaces of Organic-Inorganic 2D Semiconductors.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Engineering Hybrid Interfaces of Organic-Inorganic 2D Semiconductors./
作者:	Cheng, Che-Hsuan.
面頁冊數:	1 online resource (138 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-01, Section: B.
Contained By:	Dissertations Abstracts International84-01B.
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29274892click for full text (PQDT)
ISBN:	9798438777885

Engineering Hybrid Interfaces of Organic-Inorganic 2D Semiconductors.
Cheng, Che-Hsuan.

Engineering Hybrid Interfaces of Organic-Inorganic 2D Semiconductors. - 1 online resource (138 pages)

Source: Dissertations Abstracts International, Volume: 84-01, Section: B.

Thesis (Ph.D.)--University of Michigan, 2022.

Includes bibliographical references

The unique properties of two-dimensional (2D) materials have inspired widespread interests in integrating distinct 2D materials into van der Waals (vdW) heterojunctions for innovative device configurations. The organic-inorganic heterojunctions, combining atomically thin inorganic semiconductors with a wide variety of organic molecules, provide versatile platforms not only for the exploration of novel physical phenomena at nanoscale but also for the development of emerging device applications with promising functionalities. In this thesis, we explore the science and applications of two hybrid interfacial systems that consist of organic molecules and inorganic transition metal dichalcogenides (TMD) monolayers.In the first part, we investigate the energy transfer mechanisms across the hybrid interface of j-aggregates of organic dye and monolayer molybdenum disulphide (MoS2) by using phototransistor's photoresponsivity. The hybrid interface combines high absorption of organics with high charge mobility of inorganics. Besides, the spectral alignment between the emission of j-aggregates and the absorption of MoS2 B-exciton in the material system enables the study of Forster resonance energy transfer (FRET) across the hybrid interface. The hybrid phototransistors show nearly 93 ± 5 % enhancement of photoresponsivity in the excitonic spectral overlap regime due to efficient energy transfer from j-aggregate to MoS2. We also report a short Forster radius of 1.88 nm for the hybrid system. Based on the study, we then investigate the energy transport dynamics of hybrid charge transfer exciton (HCTE), a quasi-particle formed by another energy transfer mechanism Dexter energy transfer (DET) in this hybrid system. Following photoexcitation, highly diffusive hot HCTEs are formed in about 36 ps via scattering with optical phonons at the hybrid interface. Once the energy drops below the optical phonon energy, the excess kinetic energy is relaxed slowly via acoustic phonon scattering. As a result, the energy transport that is initially dominated by highly diffusive hot HCTEs transition into slower cold HCTEs in about 110 ps. By using Frohlich and deformation potential theory, we model the exciton-phonon interactions and attribute the prolonged transport of hot HCTEs to phonon bottleneck. We also find that the diffusivity of HCTEs in both hot and cold transport regions is higher than the diffusivity of MoS2 A exciton.In the second part, we explore another organic-2D TMDs hybrid system and utilize nanoscale strain engineering to create a self-erasable and rewritable optoexcitonic platform. We employ the reversible structural change of azobenzene based (A3) molecules to strain the overlying monolayer tungsten diselenide (WSe2), and consequently, tune its optical bandgap. By using such a hybrid material combination, we are able to generate large (>1%) local strain that results in dramatic photoluminescence (PL) wavelength shift (> 11 nm). The strain in layered A3 molecules can be relaxed under visible light exposure or can be retained up to seven days under dark condition. Based on the study, we use the same hybrid materials system and apply the principles to develop high performance hybrid transistor devices. The strain is created in an ultrathin monolayer WSe2 conducting channel by the photoisomerization of A3 molecules. The carrier mobility of the hybrid transistor can be tuned from 50 to as high as 125 cm2/Vs using the induced strain. Besides, the hybrid transistor exhibits a superior UV responsivity of 155 A/W, more than four times higher than in bare WSe2.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798438777885Subjects--Topical Terms:

543314
Materials science.
Subjects--Index Terms:

2D semiconductorsIndex Terms--Genre/Form:

542853
Electronic books.

Engineering Hybrid Interfaces of Organic-Inorganic 2D Semiconductors.
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520 $a The unique properties of two-dimensional (2D) materials have inspired widespread interests in integrating distinct 2D materials into van der Waals (vdW) heterojunctions for innovative device configurations. The organic-inorganic heterojunctions, combining atomically thin inorganic semiconductors with a wide variety of organic molecules, provide versatile platforms not only for the exploration of novel physical phenomena at nanoscale but also for the development of emerging device applications with promising functionalities. In this thesis, we explore the science and applications of two hybrid interfacial systems that consist of organic molecules and inorganic transition metal dichalcogenides (TMD) monolayers.In the first part, we investigate the energy transfer mechanisms across the hybrid interface of j-aggregates of organic dye and monolayer molybdenum disulphide (MoS2) by using phototransistor's photoresponsivity. The hybrid interface combines high absorption of organics with high charge mobility of inorganics. Besides, the spectral alignment between the emission of j-aggregates and the absorption of MoS2 B-exciton in the material system enables the study of Forster resonance energy transfer (FRET) across the hybrid interface. The hybrid phototransistors show nearly 93 ± 5 % enhancement of photoresponsivity in the excitonic spectral overlap regime due to efficient energy transfer from j-aggregate to MoS2. We also report a short Forster radius of 1.88 nm for the hybrid system. Based on the study, we then investigate the energy transport dynamics of hybrid charge transfer exciton (HCTE), a quasi-particle formed by another energy transfer mechanism Dexter energy transfer (DET) in this hybrid system. Following photoexcitation, highly diffusive hot HCTEs are formed in about 36 ps via scattering with optical phonons at the hybrid interface. Once the energy drops below the optical phonon energy, the excess kinetic energy is relaxed slowly via acoustic phonon scattering. As a result, the energy transport that is initially dominated by highly diffusive hot HCTEs transition into slower cold HCTEs in about 110 ps. By using Frohlich and deformation potential theory, we model the exciton-phonon interactions and attribute the prolonged transport of hot HCTEs to phonon bottleneck. We also find that the diffusivity of HCTEs in both hot and cold transport regions is higher than the diffusivity of MoS2 A exciton.In the second part, we explore another organic-2D TMDs hybrid system and utilize nanoscale strain engineering to create a self-erasable and rewritable optoexcitonic platform. We employ the reversible structural change of azobenzene based (A3) molecules to strain the overlying monolayer tungsten diselenide (WSe2), and consequently, tune its optical bandgap. By using such a hybrid material combination, we are able to generate large (>1%) local strain that results in dramatic photoluminescence (PL) wavelength shift (> 11 nm). The strain in layered A3 molecules can be relaxed under visible light exposure or can be retained up to seven days under dark condition. Based on the study, we use the same hybrid materials system and apply the principles to develop high performance hybrid transistor devices. The strain is created in an ultrathin monolayer WSe2 conducting channel by the photoisomerization of A3 molecules. The carrier mobility of the hybrid transistor can be tuned from 50 to as high as 125 cm2/Vs using the induced strain. Besides, the hybrid transistor exhibits a superior UV responsivity of 155 A/W, more than four times higher than in bare WSe2.
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