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Graphene Fermi Level Tuning and Its Applications.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Graphene Fermi Level Tuning and Its Applications./
作者:	Wang, Hao.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2018,
面頁冊數:	48 p.
附註:	Source: Masters Abstracts International, Volume: 80-03.
Contained By:	Masters Abstracts International80-03.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10931282
ISBN:	9780438308763

Graphene Fermi Level Tuning and Its Applications.
Wang, Hao.

Graphene Fermi Level Tuning and Its Applications. - Ann Arbor : ProQuest Dissertations & Theses, 2018 - 48 p.

Source: Masters Abstracts International, Volume: 80-03.

Thesis (M.S.)--The George Washington University, 2018.

This item must not be sold to any third party vendors.

This Thesis paper explores the graphene chemical potential change based on the fabrication process and also performed a method to engineering the graphene chemical potential by electron beam exposure. In the paper, we show that the graphene Fermi level has been successfully altered from p-type to n-type by electron beam exposure. The measurement results will be posted in the later sections. The graphene will be applied to the slot-modulator devices. The method to test the graphene chemical potential is by making a graphene-based FET, and by measuring the FET gate voltage and source-drain current, with the measurement results, we can then calculated the graphene Fermi level. The thesis also including the FET fabrication process in detail. Also, the slot-waveguide fabrications are investigated in this paper; the sub 50nm slot is a challenge for the electron beam lithography tools even the fabrication process. We used two different methods to fabricate the slot-waveguide. The graphene- based slot modulator also tested, and we find some issues and come out the solutions for them. The test bench setups and method is explained in this paper.

ISBN: 9780438308763Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Electro-optic modulator

Graphene Fermi Level Tuning and Its Applications.
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300 $a 48 p.
500 $a Source: Masters Abstracts International, Volume: 80-03.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Sorger, Volker J.;Korman, Can.
502 $a Thesis (M.S.)--The George Washington University, 2018.
506 $a This item must not be sold to any third party vendors.
520 $a This Thesis paper explores the graphene chemical potential change based on the fabrication process and also performed a method to engineering the graphene chemical potential by electron beam exposure. In the paper, we show that the graphene Fermi level has been successfully altered from p-type to n-type by electron beam exposure. The measurement results will be posted in the later sections. The graphene will be applied to the slot-modulator devices. The method to test the graphene chemical potential is by making a graphene-based FET, and by measuring the FET gate voltage and source-drain current, with the measurement results, we can then calculated the graphene Fermi level. The thesis also including the FET fabrication process in detail. Also, the slot-waveguide fabrications are investigated in this paper; the sub 50nm slot is a challenge for the electron beam lithography tools even the fabrication process. We used two different methods to fabricate the slot-waveguide. The graphene- based slot modulator also tested, and we find some issues and come out the solutions for them. The test bench setups and method is explained in this paper.
590 $a School code: 0075.
650 4 $a Electrical engineering. $3 649834
653 $a Electro-optic modulator
653 $a Fermi level tuning
653 $a Graphene
653 $a Nano-fabrication
653 $a Raman
690 $a 0544
710 2 $a The George Washington University. $b Electrical Engineering. $3 1035543
773 0 $t Masters Abstracts International $g 80-03.
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