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Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects./
作者:	Hillier, James Arthur.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	220 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-07, Section: B.
Contained By:	Dissertations Abstracts International83-07B.
標題:	Metals. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28942891
ISBN:	9798762164658

Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects.
Hillier, James Arthur.

Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 220 p.

Source: Dissertations Abstracts International, Volume: 83-07, Section: B.

Thesis (Ph.D.)--Nottingham Trent University (United Kingdom), 2021.

This item must not be sold to any third party vendors.

The ongoing development of nanofabrication capabilities ever increases our ability to exploit the light-matter interactions occurring on the nanoscale, promising radical breakthroughs in many technological sectors. This research field, namely plasmonics, faces a major roadblock in respect to realistic applications. Specifically, to translate the potential of plasmonics into practical optical devices, the right set of materials are required; materials that can overcome the loss issue and expand the operational window towards the infrared and (IR) near-IR (NIR) spectral ranges. Transparent conductive oxides (TCOs) are appealing alternatives due to their transparency, refractory character, and maturity in electronic devices. Importantly, their non-stoichiometric character allows for the modulation of their optoelectronic properties through the manipulation of their defects. This research developed the knowledge of the optoelectronic properties of TCOs, via spectroscopic ellipsometry (SE) while examining high-throughput methods to tune their transport properties towards the requirements of IR plasmonics. Specifically, this research investigated, for the first time, the utility of reactive laser annealing (ReLA) to probe the crystal structure and donor state variations of sputtered tin-doped indium oxide (ITO) thin films. The demonstration of ReLA comprised an investigation of the role of the laser processing parameters (e.g., laser fluence, number of pulses and ambient composition) with an extensive characterisation methodology comprising: four-point probe, Hall Effect, X-ray diffractometry, energy-dispersive X-ray spectroscopy and X-ray photon spectroscopy. In this way, ReLA is established as a novel and versatile tool to tailor the properties of TCO films towards the requirements of potential plasmonic applications. Furthermore, SE in the wide spectral range between 0.034−6.5 eV was employed to get insights on the properties of seed TCO films and the laser-induced modifications, revealing how and why TCOs present challenges both for further elucidating the still not fully known mechanisms that govern their optoelectronic behaviour and for their integration into far-IR plasmonic devices.

ISBN: 9798762164658Subjects--Topical Terms:

601053
Metals.

Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects.
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520 $a The ongoing development of nanofabrication capabilities ever increases our ability to exploit the light-matter interactions occurring on the nanoscale, promising radical breakthroughs in many technological sectors. This research field, namely plasmonics, faces a major roadblock in respect to realistic applications. Specifically, to translate the potential of plasmonics into practical optical devices, the right set of materials are required; materials that can overcome the loss issue and expand the operational window towards the infrared and (IR) near-IR (NIR) spectral ranges. Transparent conductive oxides (TCOs) are appealing alternatives due to their transparency, refractory character, and maturity in electronic devices. Importantly, their non-stoichiometric character allows for the modulation of their optoelectronic properties through the manipulation of their defects. This research developed the knowledge of the optoelectronic properties of TCOs, via spectroscopic ellipsometry (SE) while examining high-throughput methods to tune their transport properties towards the requirements of IR plasmonics. Specifically, this research investigated, for the first time, the utility of reactive laser annealing (ReLA) to probe the crystal structure and donor state variations of sputtered tin-doped indium oxide (ITO) thin films. The demonstration of ReLA comprised an investigation of the role of the laser processing parameters (e.g., laser fluence, number of pulses and ambient composition) with an extensive characterisation methodology comprising: four-point probe, Hall Effect, X-ray diffractometry, energy-dispersive X-ray spectroscopy and X-ray photon spectroscopy. In this way, ReLA is established as a novel and versatile tool to tailor the properties of TCO films towards the requirements of potential plasmonic applications. Furthermore, SE in the wide spectral range between 0.034−6.5 eV was employed to get insights on the properties of seed TCO films and the laser-induced modifications, revealing how and why TCOs present challenges both for further elucidating the still not fully known mechanisms that govern their optoelectronic behaviour and for their integration into far-IR plasmonic devices.
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