語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
FindBook
Google Book
Amazon
博客來
Backside-Integrated III-V-on-Silicon Lasers and Modulators.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Backside-Integrated III-V-on-Silicon Lasers and Modulators./
作者:
Thiessen, Torrey Lane.
出版者:
Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:
168 p.
附註:
Source: Dissertations Abstracts International, Volume: 83-01, Section: B.
Contained By:
Dissertations Abstracts International83-01B.
標題:
Optics. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28319146
ISBN:
9798522943561
Backside-Integrated III-V-on-Silicon Lasers and Modulators.
Thiessen, Torrey Lane.
Backside-Integrated III-V-on-Silicon Lasers and Modulators.
- Ann Arbor : ProQuest Dissertations & Theses, 2021 - 168 p.
Source: Dissertations Abstracts International, Volume: 83-01, Section: B.
Thesis (Ph.D.)--University of Toronto (Canada), 2021.
This item must not be sold to any third party vendors.
III-V-on-silicon (III-V-on-Si) bonding has emerged as a viable way to integrate lasers with Si photonic circuits at the wafer-scale. However, hybrid III-V-on-Si integration is often plagued by high thermal impedance and difficulty in co-integration with other materials. In this thesis, we design and demonstrate the first active devices on a new Back-Side-on-Buried-Oxide (BSoBOX integration process, in which the III-V material is introduced from the back of the silicon-on-insulator (SOI) wafer to address the common problems of III-V-on-Si integration. While designing and characterizing devices on the BSoBOX platform, the merits and limitations of the platform are also evaluated. First, we develop an optimization technique for producing short, broadband transitions between the SOI waveguides and the hybrid III-V-on-Si waveguides. The eigenmode-expansion based optimization process manipulates the lengths of short sub-tapers to produce a transition that maintains adiabaticity in the shortest length possible. Compared to an 80 µm long linear taper, with a power transfer efficiency of ∼85% at 1310 nm, the optimized design has a length of 80 µm and an efficiency ≥99.5% across the O-band.Next, two types of lasers are evaluated. We demonstrate distributed feedback lasers with threshold currents as low as 32 mA and 20 mW of waveguide-coupled power from a single end of the device. The side mode suppression ratio (SMSR) is around 50 dB within the range of 20 °C-60 °C and operation up to 80 °C is observed. We also demonstrate the first III-V-on-Si discrete-mode lasers, with the best device exhibiting 17 mW of waveguide-coupled power, a Lorentzian linewidth of 18 kHz and a SMSR ≥60 dB. The performance of these devices is comparable to the state-of-the-art III-V-on-Si lasers, despite this being the first iteration of the BSoBOX platform.Lastly, the first high-speed InP-on-Si modulators are designed and characterized on a frontside integrated platform that can be later converted to BSoBOX integration. The DC efficiency is 1.3 V·cm, roughly twice as high as lateral PN junction designs, while maintaining a comparable bandwidth of 30 GHz. Simulations show the BSoBOX designs will lead to a ∼4x improvement in efficiency and roughly 50% improvement in bandwidth compared to the current work.
ISBN: 9798522943561Subjects--Topical Terms:
517925
Optics.
Subjects--Index Terms:
Hybrid lasers
Backside-Integrated III-V-on-Silicon Lasers and Modulators.
LDR
:03440nmm a2200361 4500
001
2347584
005
20220823142305.5
008
241004s2021 ||||||||||||||||| ||eng d
020
$a
9798522943561
035
$a
(MiAaPQ)AAI28319146
035
$a
AAI28319146
040
$a
MiAaPQ
$c
MiAaPQ
100
1
$a
Thiessen, Torrey Lane.
$0
(orcid)0000-0001-5050-3130
$3
3686853
245
1 0
$a
Backside-Integrated III-V-on-Silicon Lasers and Modulators.
260
1
$a
Ann Arbor :
$b
ProQuest Dissertations & Theses,
$c
2021
300
$a
168 p.
500
$a
Source: Dissertations Abstracts International, Volume: 83-01, Section: B.
500
$a
Advisor: Poon, Joyce;Menezo, Sylvie.
502
$a
Thesis (Ph.D.)--University of Toronto (Canada), 2021.
506
$a
This item must not be sold to any third party vendors.
520
$a
III-V-on-silicon (III-V-on-Si) bonding has emerged as a viable way to integrate lasers with Si photonic circuits at the wafer-scale. However, hybrid III-V-on-Si integration is often plagued by high thermal impedance and difficulty in co-integration with other materials. In this thesis, we design and demonstrate the first active devices on a new Back-Side-on-Buried-Oxide (BSoBOX integration process, in which the III-V material is introduced from the back of the silicon-on-insulator (SOI) wafer to address the common problems of III-V-on-Si integration. While designing and characterizing devices on the BSoBOX platform, the merits and limitations of the platform are also evaluated. First, we develop an optimization technique for producing short, broadband transitions between the SOI waveguides and the hybrid III-V-on-Si waveguides. The eigenmode-expansion based optimization process manipulates the lengths of short sub-tapers to produce a transition that maintains adiabaticity in the shortest length possible. Compared to an 80 µm long linear taper, with a power transfer efficiency of ∼85% at 1310 nm, the optimized design has a length of 80 µm and an efficiency ≥99.5% across the O-band.Next, two types of lasers are evaluated. We demonstrate distributed feedback lasers with threshold currents as low as 32 mA and 20 mW of waveguide-coupled power from a single end of the device. The side mode suppression ratio (SMSR) is around 50 dB within the range of 20 °C-60 °C and operation up to 80 °C is observed. We also demonstrate the first III-V-on-Si discrete-mode lasers, with the best device exhibiting 17 mW of waveguide-coupled power, a Lorentzian linewidth of 18 kHz and a SMSR ≥60 dB. The performance of these devices is comparable to the state-of-the-art III-V-on-Si lasers, despite this being the first iteration of the BSoBOX platform.Lastly, the first high-speed InP-on-Si modulators are designed and characterized on a frontside integrated platform that can be later converted to BSoBOX integration. The DC efficiency is 1.3 V·cm, roughly twice as high as lateral PN junction designs, while maintaining a comparable bandwidth of 30 GHz. Simulations show the BSoBOX designs will lead to a ∼4x improvement in efficiency and roughly 50% improvement in bandwidth compared to the current work.
590
$a
School code: 0779.
650
4
$a
Optics.
$3
517925
650
4
$a
Materials science.
$3
543314
650
4
$a
Mechanical engineering.
$3
649730
650
4
$a
Photonics.
$3
526247
650
4
$a
Lasers.
$3
535503
650
4
$a
Electric fields.
$3
880423
650
4
$a
Optimization.
$3
891104
650
4
$a
Efficiency.
$3
753744
653
$a
Hybrid lasers
653
$a
Integrated optics
653
$a
Modulators
653
$a
Photonics
690
$a
0752
690
$a
0794
690
$a
0548
710
2
$a
University of Toronto (Canada).
$b
Electrical and Computer Engineering.
$3
2096349
773
0
$t
Dissertations Abstracts International
$g
83-01B.
790
$a
0779
791
$a
Ph.D.
792
$a
2021
793
$a
English
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28319146
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9470022
電子資源
11.線上閱覽_V
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入