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Graphene Channels Interfaced with Distributed Quantum Dots.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Graphene Channels Interfaced with Distributed Quantum Dots./
作者:	Miao, Xin.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2019,
面頁冊數:	128 p.
附註:	Source: Dissertations Abstracts International, Volume: 81-03, Section: B.
Contained By:	Dissertations Abstracts International81-03B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=13807524
ISBN:	9781085790413

Graphene Channels Interfaced with Distributed Quantum Dots.
Miao, Xin.

Graphene Channels Interfaced with Distributed Quantum Dots. - Ann Arbor : ProQuest Dissertations & Theses, 2019 - 128 p.

Source: Dissertations Abstracts International, Volume: 81-03, Section: B.

Thesis (Ph.D.)--New Jersey Institute of Technology, 2019.

This item must not be sold to any third party vendors.

Previous research has elucidated the remarkable electrical and optical characteristics of graphene and pointed to the various applications of graphene-based devices. One of such applications is electro-optical graphene-based elements. In this work, the optoelectronic properties of field-effect transistors are explored. These are composed of surface graphene guides, which are interfaced with an array of individual semiconductor quantum dots. The graphene guide also serves as a channel for the field-effect transistor (FET) while the dots provide for fluorescence markers. They may be placed either within the capacitor formed between the graphene and the gate electrode, or on top of the graphene. Electrical characteristics under white light illumination and the device's photoluminescence (PL) properties at various biasing conditions are studied.The graphene's channel conductivity as a function of gate bias and drain-source bias under illumination are obtained. A minimum in source-drain current signifies the Dirac point. Under a low intensity of white light, the photocurrent changes signs as a function of gate bias, which suggests that the photocurrent may have originated from the graphene channel rather than the QDs. Negative differential photo-conductance is observed under illumination at large negative gate voltages. Changes in the fluorescence are noted as a function of both the drain-source and gate-source potentials. The fluorescence is more pronounced when the incident or the emission wavelengths are coupled to surface modes.Luminescence lifetimes and linewidths from an array of individual quantum dots (QDs) that are either interfaced with graphene surface guides or dispersed on aluminum electrodes are studied. The observed fluorescence quenching is consistent with screening by charge carriers. Fluorescence quenching is typically mentioned as a sign that chromophores are interfaced with a conductive surface (metal or graphene). The QDs interfaced with the metal film indeed exhibits shorter lifetime and line-broadening compared to QDs on a dielectric substrates but not necessarily fluorescence quenching; the latter may be impacted by molecular concentration, reflectivity considerations and conductor imperfections.

ISBN: 9781085790413Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Field effect transistor

Graphene Channels Interfaced with Distributed Quantum Dots.
LDR:03397nmm a2200373 4500 001 2347561
005 20220823142259.5
008 241004s2019 ||||||||||||||||| ||eng d
020 $a 9781085790413
035 $a (MiAaPQ)AAI13807524
035 $a AAI13807524
040 $a MiAaPQ $c MiAaPQ
100 1 $a Miao, Xin. $3 3686829
245 1 0 $a Graphene Channels Interfaced with Distributed Quantum Dots.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2019
300 $a 128 p.
500 $a Source: Dissertations Abstracts International, Volume: 81-03, Section: B.
500 $a Advisor: Grebel, Haim.
502 $a Thesis (Ph.D.)--New Jersey Institute of Technology, 2019.
506 $a This item must not be sold to any third party vendors.
520 $a Previous research has elucidated the remarkable electrical and optical characteristics of graphene and pointed to the various applications of graphene-based devices. One of such applications is electro-optical graphene-based elements. In this work, the optoelectronic properties of field-effect transistors are explored. These are composed of surface graphene guides, which are interfaced with an array of individual semiconductor quantum dots. The graphene guide also serves as a channel for the field-effect transistor (FET) while the dots provide for fluorescence markers. They may be placed either within the capacitor formed between the graphene and the gate electrode, or on top of the graphene. Electrical characteristics under white light illumination and the device's photoluminescence (PL) properties at various biasing conditions are studied.The graphene's channel conductivity as a function of gate bias and drain-source bias under illumination are obtained. A minimum in source-drain current signifies the Dirac point. Under a low intensity of white light, the photocurrent changes signs as a function of gate bias, which suggests that the photocurrent may have originated from the graphene channel rather than the QDs. Negative differential photo-conductance is observed under illumination at large negative gate voltages. Changes in the fluorescence are noted as a function of both the drain-source and gate-source potentials. The fluorescence is more pronounced when the incident or the emission wavelengths are coupled to surface modes.Luminescence lifetimes and linewidths from an array of individual quantum dots (QDs) that are either interfaced with graphene surface guides or dispersed on aluminum electrodes are studied. The observed fluorescence quenching is consistent with screening by charge carriers. Fluorescence quenching is typically mentioned as a sign that chromophores are interfaced with a conductive surface (metal or graphene). The QDs interfaced with the metal film indeed exhibits shorter lifetime and line-broadening compared to QDs on a dielectric substrates but not necessarily fluorescence quenching; the latter may be impacted by molecular concentration, reflectivity considerations and conductor imperfections.
590 $a School code: 0152.
650 4 $a Electrical engineering. $3 649834
650 4 $a Optics. $3 517925
650 4 $a Materials science. $3 543314
653 $a Field effect transistor
653 $a Graphene
653 $a Lifetime
653 $a Photoluminescence
653 $a Quantum dots
690 $a 0544
690 $a 0794
690 $a 0752
710 2 $a New Jersey Institute of Technology. $b Helen and John C. Hartmann Department of Electrical and Computer Engineering. $3 3544311
773 0 $t Dissertations Abstracts International $g 81-03B.
790 $a 0152
791 $a Ph.D.
792 $a 2019
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=13807524