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Engineering Contact Layers in Metal Halide Perovskite Solar Cells Using Atomic Layer Deposition.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Engineering Contact Layers in Metal Halide Perovskite Solar Cells Using Atomic Layer Deposition./
作者:	Raiford, James Andrew.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	197 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-05, Section: B.
Contained By:	Dissertations Abstracts International83-05B.
標題:	Silicon. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28688359
ISBN:	9798544204435

Engineering Contact Layers in Metal Halide Perovskite Solar Cells Using Atomic Layer Deposition.
Raiford, James Andrew.

Engineering Contact Layers in Metal Halide Perovskite Solar Cells Using Atomic Layer Deposition. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 197 p.

Source: Dissertations Abstracts International, Volume: 83-05, Section: B.

Thesis (Ph.D.)--Stanford University, 2021.

This item must not be sold to any third party vendors.

To meet the world's growing demand for energy and prevent irreversible climate change, there is a need to shift how we produce and use electricity from finite fossil fuel - based systems to more efficient and carbon neutral sources . This transition has already begun in the transportation industry, with the advent of electric vehicles, as well as in industry and building development, where electric heat pumps are replacing traditional gas or oil heating systems. Solar energy is an attractive , renewable energy source be cause of its massive abundance and its capacity for distributed generation . Photovoltaics (PV) allow us to convert this solar energy directly into usable electricity. Silicon - based PV is the incumbent technology in this space, but the development of new PV technologies can help drive down the cost of electricity and open new applications. Metal halide p erovskite solar cells are one such technology on the cusp of commercialization; however, more research is needed to improve their power conversion efficiency and long - term stability, as well as to scale - up their manufacturing. Contact layers and their interfaces with the perovskite absorber are an important component in each of the se facets of research. Engineering these contact layers to improve the collectio n of photogenerated charge carriers often requires precise control over their film properties, such as thickness , composition, and crystallinity . Atomic layer deposition is a versatile , nanoscale synthesis tool that is well - suited for these applications. In this dissertation, we develop low temperature (< 100 ° C) ALD processes to grow metal oxide contact layers above the perovskite absorber. We focus primarily on vanadium oxide (VO x ) and tin oxide (SnO 2 ) , which are hole - and electron - selective contact materials, respectivel y. C onformal ALD VO x contacts protect t he underlying perovskite from damage during sputtering of a transparent top electrode. The resulting semi - transparent devices have potential applications as the wide band gap subcell in tandem solar cells. Tuning the organic hole contact in these devices a lso leads to improvements in device photocurrent. We show that the ALD VO x contacts are a more stable alternative to molybdenum oxide (MoO x ), a metal oxide with similar electronic properties that has previously enabled n - i - p tandem solar cells with record power conversion efficiencies. Unlike MoO x , the ALD VO x is morphologically stable at temperatures (70 ° C) relevant to solar cell operation in the field, resulting in devices wit h better long - term stability . The growth behavior of ALD contacts also has impo rtant implications for overall solar cell performance and stability. We find that functionalizing the ALD growth surface to hel p initiate film growth leads to more compact ALD SnO 2 contact s that extend the lifespan of perovskite solar cells. Lastly, we investigate some of the limitations of using ALD processing on perovskite materials. Namely , we explore the use of PbS overlayers to limit adverse reactions between ALD metal - organic precursor molecules and the perovskite that lead to a poor interface for charge extraction from the solar cell.

ISBN: 9798544204435Subjects--Topical Terms:

669429
Silicon.

Engineering Contact Layers in Metal Halide Perovskite Solar Cells Using Atomic Layer Deposition.
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520 $a To meet the world's growing demand for energy and prevent irreversible climate change, there is a need to shift how we produce and use electricity from finite fossil fuel - based systems to more efficient and carbon neutral sources . This transition has already begun in the transportation industry, with the advent of electric vehicles, as well as in industry and building development, where electric heat pumps are replacing traditional gas or oil heating systems. Solar energy is an attractive , renewable energy source be cause of its massive abundance and its capacity for distributed generation . Photovoltaics (PV) allow us to convert this solar energy directly into usable electricity. Silicon - based PV is the incumbent technology in this space, but the development of new PV technologies can help drive down the cost of electricity and open new applications. Metal halide p erovskite solar cells are one such technology on the cusp of commercialization; however, more research is needed to improve their power conversion efficiency and long - term stability, as well as to scale - up their manufacturing. Contact layers and their interfaces with the perovskite absorber are an important component in each of the se facets of research. Engineering these contact layers to improve the collectio n of photogenerated charge carriers often requires precise control over their film properties, such as thickness , composition, and crystallinity . Atomic layer deposition is a versatile , nanoscale synthesis tool that is well - suited for these applications. In this dissertation, we develop low temperature (< 100 ° C) ALD processes to grow metal oxide contact layers above the perovskite absorber. We focus primarily on vanadium oxide (VO x ) and tin oxide (SnO 2 ) , which are hole - and electron - selective contact materials, respectivel y. C onformal ALD VO x contacts protect t he underlying perovskite from damage during sputtering of a transparent top electrode. The resulting semi - transparent devices have potential applications as the wide band gap subcell in tandem solar cells. Tuning the organic hole contact in these devices a lso leads to improvements in device photocurrent. We show that the ALD VO x contacts are a more stable alternative to molybdenum oxide (MoO x ), a metal oxide with similar electronic properties that has previously enabled n - i - p tandem solar cells with record power conversion efficiencies. Unlike MoO x , the ALD VO x is morphologically stable at temperatures (70 ° C) relevant to solar cell operation in the field, resulting in devices wit h better long - term stability . The growth behavior of ALD contacts also has impo rtant implications for overall solar cell performance and stability. We find that functionalizing the ALD growth surface to hel p initiate film growth leads to more compact ALD SnO 2 contact s that extend the lifespan of perovskite solar cells. Lastly, we investigate some of the limitations of using ALD processing on perovskite materials. Namely , we explore the use of PbS overlayers to limit adverse reactions between ALD metal - organic precursor molecules and the perovskite that lead to a poor interface for charge extraction from the solar cell.
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