東華大學圖書館 |

Development and Fabrication of Laser Scribed Copper Indium Gallium Diselenide (CIGS) Thin Film Solar Cell Module.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Development and Fabrication of Laser Scribed Copper Indium Gallium Diselenide (CIGS) Thin Film Solar Cell Module./
作者:	Suryavanshi, Priya Shashikant.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	262 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-02, Section: B.
Contained By:	Dissertations Abstracts International83-02B.
標題:	Applied physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28648868
ISBN:	9798534685756

Development and Fabrication of Laser Scribed Copper Indium Gallium Diselenide (CIGS) Thin Film Solar Cell Module.
Suryavanshi, Priya Shashikant.

Development and Fabrication of Laser Scribed Copper Indium Gallium Diselenide (CIGS) Thin Film Solar Cell Module. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 262 p.

Source: Dissertations Abstracts International, Volume: 83-02, Section: B.

Thesis (Ph.D.)--Maharaja Sayajirao University of Baroda (India), 2021.

This item must not be sold to any third party vendors.

Consumption of energy across the world has perturbed the human-being. Availability, accessibility, and regeneration of energy resources are a perpetual matter of concern. Renewable energy is the best alternative to non-renewable energy. Solar energy is clean, reliable, and sustainable form of renewable energy available globally. Harvesting solar energy for consumption can be done by converting light energy into electrical energy. Innumerable research work has been carried out with several chemical compositions that are capable of harvesting solar energy. Copper Indium Gallium Diselenide (CIGS) chalcopyrite is a commendable candidate for low cost, highly stable, reliable, and efficient solar cell modules. Solar Frontier has marked 23.35 ± 0.5 % efficiency of CIGS solar cell of area 1 cm2. In the present research work, the fabrication and development of the CIGS solar cell module on 50 x 50 mm sodalime glass substrate have been discussed.Multilayer SLG/Mo/CIGS/CdS/i-ZnO/AZO was deposited sequentially on 60 x 60 x 1 mm SLG substrate to develop CIGS solar cell module. Deposition techniques such as DC sputtering, RF sputtering, and Chemical Bath deposition was used for depositing all functional layer. Bilayer Mo layer deposited by DC sputtering at substrate temperature 215 °C of thickness 1 µm at deposition pressure 10 mTorr (bottom) and 1 mTorr (top) at 150 W power is suitable for Mo layer to act as ohmic back contact. It has a dense columnar structure with a sheet resistance of 0.332 Ω/□, and optical reflectivity of 72 %. Adhesion test was performed using Laser (Nd:YAG 1064 nm) and ammonia solution bath. CIGS layer as a p-type absorber for photocarrier generation in CIGS solar cell. For depositing the CIGS layer, a vacuum sintered sputter target was prepared. CIGS thin-film layer was deposited using RF sputtering technique, CIGS thin-film deposited at 150 W RF power, 15 mTorr working pressure and further annealed in a vacuum furnace in two steps i.e., first at 400 °C and hold for 2 mins and then at 550 °C holds for 8 mins. This process confirms the tetragonal chalcopyrite phase of the CIGS layer.For the n-type junction partner of the CIGS absorber, cadmium sulphide (CdS) is a prominent choice. Three different deposition techniques i. e., thermal II evaporation, chemical bath deposition, and RF-sputtering were optimized. From the results, it was found CBD deposition is favorable for depositing the buffer layer. It has low Urbach energy 54.46 meV and the layer has conformal coverage without pinholes.High resistive transparent layer (i-ZnO) intrinsic-Zinc Oxide and top window contact (AZO) Aluminium doped Zinc-Oxide layers were optimized. i-ZnO layer deposited by RF sputtering with thickness 50 nm at 1 mTorr working pressure and 150 W RF power possess optimum electrical resistivity in order of 105 as well highly transparent layer. This layer protects the buffer and absorber layer from the high energetic impact of sputtered AZO atoms. AZO layer was deposited using RF sputtering at 100 W RF power and 10 mTorr working pressure with a thickness of 400 nm. It has optical transmittance of 85-90 % and a resistivity of 6.26 x 10-4 Ω-cm.From cell to module fabrication, monolithic integration of CIGS solar cell module was carried out. P1 with laser (Nd: YAG 1064 nm) and P2 and P3 with mechanical scribing technique was optimized. Performance CIGS solar cell and module fabricated on 50 x 50 mm of SLG substrate was estimated. The I-V characteristics revealed that CIGS solar cell module draws Isc = 0.11 mA, Voc = 410 mV, efficiency-η = 0.26 %, Rs = 1879.22 Ω-cm2, and Rsh = 9062.69 Ω-cm2.The performance of the CIGS module can be enhanced by tuning fine properties of the functional layers, optimizing better monolithic integration process parameters, and reducing the recombinations in bulk and the interface by light trapping management.

ISBN: 9798534685756Subjects--Topical Terms:

3343996
Applied physics.
Subjects--Index Terms:

Copper

Development and Fabrication of Laser Scribed Copper Indium Gallium Diselenide (CIGS) Thin Film Solar Cell Module.
LDR:05078nmm a2200373 4500 001 2343271
005 20220502104215.5
008 241004s2021 ||||||||||||||||| ||eng d
020 $a 9798534685756
035 $a (MiAaPQ)AAI28648868
035 $a AAI28648868
040 $a MiAaPQ $c MiAaPQ
100 1 $a Suryavanshi, Priya Shashikant. $3 3681785
245 1 0 $a Development and Fabrication of Laser Scribed Copper Indium Gallium Diselenide (CIGS) Thin Film Solar Cell Module.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2021
300 $a 262 p.
500 $a Source: Dissertations Abstracts International, Volume: 83-02, Section: B.
500 $a Advisor: Panchal, C. J.
502 $a Thesis (Ph.D.)--Maharaja Sayajirao University of Baroda (India), 2021.
506 $a This item must not be sold to any third party vendors.
520 $a Consumption of energy across the world has perturbed the human-being. Availability, accessibility, and regeneration of energy resources are a perpetual matter of concern. Renewable energy is the best alternative to non-renewable energy. Solar energy is clean, reliable, and sustainable form of renewable energy available globally. Harvesting solar energy for consumption can be done by converting light energy into electrical energy. Innumerable research work has been carried out with several chemical compositions that are capable of harvesting solar energy. Copper Indium Gallium Diselenide (CIGS) chalcopyrite is a commendable candidate for low cost, highly stable, reliable, and efficient solar cell modules. Solar Frontier has marked 23.35 ± 0.5 % efficiency of CIGS solar cell of area 1 cm2. In the present research work, the fabrication and development of the CIGS solar cell module on 50 x 50 mm sodalime glass substrate have been discussed.Multilayer SLG/Mo/CIGS/CdS/i-ZnO/AZO was deposited sequentially on 60 x 60 x 1 mm SLG substrate to develop CIGS solar cell module. Deposition techniques such as DC sputtering, RF sputtering, and Chemical Bath deposition was used for depositing all functional layer. Bilayer Mo layer deposited by DC sputtering at substrate temperature 215 °C of thickness 1 µm at deposition pressure 10 mTorr (bottom) and 1 mTorr (top) at 150 W power is suitable for Mo layer to act as ohmic back contact. It has a dense columnar structure with a sheet resistance of 0.332 Ω/□, and optical reflectivity of 72 %. Adhesion test was performed using Laser (Nd:YAG 1064 nm) and ammonia solution bath. CIGS layer as a p-type absorber for photocarrier generation in CIGS solar cell. For depositing the CIGS layer, a vacuum sintered sputter target was prepared. CIGS thin-film layer was deposited using RF sputtering technique, CIGS thin-film deposited at 150 W RF power, 15 mTorr working pressure and further annealed in a vacuum furnace in two steps i.e., first at 400 °C and hold for 2 mins and then at 550 °C holds for 8 mins. This process confirms the tetragonal chalcopyrite phase of the CIGS layer.For the n-type junction partner of the CIGS absorber, cadmium sulphide (CdS) is a prominent choice. Three different deposition techniques i. e., thermal II evaporation, chemical bath deposition, and RF-sputtering were optimized. From the results, it was found CBD deposition is favorable for depositing the buffer layer. It has low Urbach energy 54.46 meV and the layer has conformal coverage without pinholes.High resistive transparent layer (i-ZnO) intrinsic-Zinc Oxide and top window contact (AZO) Aluminium doped Zinc-Oxide layers were optimized. i-ZnO layer deposited by RF sputtering with thickness 50 nm at 1 mTorr working pressure and 150 W RF power possess optimum electrical resistivity in order of 105 as well highly transparent layer. This layer protects the buffer and absorber layer from the high energetic impact of sputtered AZO atoms. AZO layer was deposited using RF sputtering at 100 W RF power and 10 mTorr working pressure with a thickness of 400 nm. It has optical transmittance of 85-90 % and a resistivity of 6.26 x 10-4 Ω-cm.From cell to module fabrication, monolithic integration of CIGS solar cell module was carried out. P1 with laser (Nd: YAG 1064 nm) and P2 and P3 with mechanical scribing technique was optimized. Performance CIGS solar cell and module fabricated on 50 x 50 mm of SLG substrate was estimated. The I-V characteristics revealed that CIGS solar cell module draws Isc = 0.11 mA, Voc = 410 mV, efficiency-η = 0.26 %, Rs = 1879.22 Ω-cm2, and Rsh = 9062.69 Ω-cm2.The performance of the CIGS module can be enhanced by tuning fine properties of the functional layers, optimizing better monolithic integration process parameters, and reducing the recombinations in bulk and the interface by light trapping management.
590 $a School code: 1011.
650 4 $a Applied physics. $3 3343996
650 4 $a Electrical engineering. $3 649834
650 4 $a Chemical engineering. $3 560457
650 4 $a Photovoltaic cells. $3 604818
650 4 $a Spectrum analysis. $3 520440
650 4 $a Scanning electron microscopy. $3 551366
650 4 $a Chemical vapor deposition. $3 621056
650 4 $a Natural gas. $3 668611
653 $a Copper
653 $a Fabrication
653 $a Film Solar
653 $a Indium
653 $a Laser
690 $a 0215
690 $a 0544
690 $a 0542
710 2 $a Maharaja Sayajirao University of Baroda (India). $b Department of Applied Physics. $3 3681786
773 0 $t Dissertations Abstracts International $g 83-02B.
790 $a 1011
791 $a Ph.D.
792 $a 2021
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28648868