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Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride Films for Metal-Insulator-Metal Devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride Films for Metal-Insulator-Metal Devices./
作者:	He, Yanwei.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	134 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-02, Section: B.
Contained By:	Dissertations Abstracts International83-02B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28415386
ISBN:	9798534694499

Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride Films for Metal-Insulator-Metal Devices.
He, Yanwei.

Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride Films for Metal-Insulator-Metal Devices. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 134 p.

Source: Dissertations Abstracts International, Volume: 83-02, Section: B.

Thesis (Ph.D.)--University of California, Riverside, 2021.

This item must not be sold to any third party vendors.

Two-dimensional (2D) hexagonal boron nitride (h-BN) plays a significant role in nanoscale electrical and optical devices because of its superior properties. However, the difficulties in the controllable growth of high-quality films hinder its applications. In this thesis, we focus on improving the quality of h-BN films with molecular beam epitaxy (MBE), and implementing the as-grown monolayer h-BN films in metal-insulator-metal (MIM) devices. In the first project, i.e., Chapter 2, we present a study of h-BN adlayer growth and provide a strategy towards eliminating these adlayers for the precise control of the number of 2D layers. By varying the growth parameters such as substrate property, nitrogen source composition, and substrate carburization time, we found that the adlayer growth can be controlled by controlling the nucleation and intercalation processes, which is achieved by engineering the defects and impurities on substrate and the activeness of the h-BN edges. In the second project, i.e., Chapter 3, we report a study of 2D h-BN growth on carburized Ni substrates. It was found that the carburization of Ni substrates with different surface orientations leads to different kinetics of h-BN growth. While the carburization of Ni (100) enhances the h-BN growth, the speed of the h-BN growth on carburized Ni (111) reduces. As grown continuous monolayer h-BN films are used to fabricate Ni/h-BN/Ni MIM devices, which demonstrate a high breakdown electric field of 12.9 MV/cm.In the last project, i.e., Chapter 4, we report an effective method to synthesize single-crystal monolayer h-BN films. We discovered that electropolishing plays an important role in drastically increasing the speed of h-BN film growth. 1-in2 monolayer single-crystal h-BN films are obtained within 1 hour by MBE. Robust nano capacitors were fabricated using as grown monolayer h-BN films. The nano-capacitance effect and tunneling current mechanism were studied in detail, and the 'effective distance' concept is introduced to explain the quantum phenomenon in the van der Waals MIM devices using atomically thin dielectric h-BN films.

ISBN: 9798534694499Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Controllable film growth

Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride Films for Metal-Insulator-Metal Devices.
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100 1 $a He, Yanwei. $3 3681641
245 1 0 $a Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride Films for Metal-Insulator-Metal Devices.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2021
300 $a 134 p.
500 $a Source: Dissertations Abstracts International, Volume: 83-02, Section: B.
500 $a Advisor: Liu, Jianlin.
502 $a Thesis (Ph.D.)--University of California, Riverside, 2021.
506 $a This item must not be sold to any third party vendors.
520 $a Two-dimensional (2D) hexagonal boron nitride (h-BN) plays a significant role in nanoscale electrical and optical devices because of its superior properties. However, the difficulties in the controllable growth of high-quality films hinder its applications. In this thesis, we focus on improving the quality of h-BN films with molecular beam epitaxy (MBE), and implementing the as-grown monolayer h-BN films in metal-insulator-metal (MIM) devices. In the first project, i.e., Chapter 2, we present a study of h-BN adlayer growth and provide a strategy towards eliminating these adlayers for the precise control of the number of 2D layers. By varying the growth parameters such as substrate property, nitrogen source composition, and substrate carburization time, we found that the adlayer growth can be controlled by controlling the nucleation and intercalation processes, which is achieved by engineering the defects and impurities on substrate and the activeness of the h-BN edges. In the second project, i.e., Chapter 3, we report a study of 2D h-BN growth on carburized Ni substrates. It was found that the carburization of Ni substrates with different surface orientations leads to different kinetics of h-BN growth. While the carburization of Ni (100) enhances the h-BN growth, the speed of the h-BN growth on carburized Ni (111) reduces. As grown continuous monolayer h-BN films are used to fabricate Ni/h-BN/Ni MIM devices, which demonstrate a high breakdown electric field of 12.9 MV/cm.In the last project, i.e., Chapter 4, we report an effective method to synthesize single-crystal monolayer h-BN films. We discovered that electropolishing plays an important role in drastically increasing the speed of h-BN film growth. 1-in2 monolayer single-crystal h-BN films are obtained within 1 hour by MBE. Robust nano capacitors were fabricated using as grown monolayer h-BN films. The nano-capacitance effect and tunneling current mechanism were studied in detail, and the 'effective distance' concept is introduced to explain the quantum phenomenon in the van der Waals MIM devices using atomically thin dielectric h-BN films.
590 $a School code: 0032.
650 4 $a Electrical engineering. $3 649834
650 4 $a Materials science. $3 543314
650 4 $a Nanotechnology. $3 526235
650 4 $a Dielectric properties. $3 3560265
650 4 $a Boron. $3 544039
650 4 $a Plasma. $3 877619
650 4 $a Photographs. $3 627415
650 4 $a Single crystals. $3 3681642
650 4 $a Grain boundaries. $3 748639
650 4 $a Adsorption. $3 580046
650 4 $a Molecular beam epitaxy. $3 601057
650 4 $a Point defects. $3 874426
650 4 $a Energy. $3 876794
650 4 $a Graphene. $3 1569149
650 4 $a Gas flow. $3 3487726
650 4 $a Thin films. $3 626403
650 4 $a Probability distribution. $3 3562293
650 4 $a Nitrogen. $3 1314426
650 4 $a Polymers. $3 535398
650 4 $a Fourier transforms. $3 3545926
650 4 $a Carbon. $3 604057
650 4 $a Electric fields. $3 880423
650 4 $a Chemical vapor deposition. $3 621056
650 4 $a Ammonia. $3 2148979
650 4 $a Morphology. $3 591167
653 $a Controllable film growth
653 $a H-BN films
653 $a Molecular beam epitaxy
653 $a Adlayer growth
653 $a Single crystal monolayer synthesis
690 $a 0544
690 $a 0794
690 $a 0652
690 $a 0791
690 $a 0287
710 2 $a University of California, Riverside. $b Electrical Engineering. $3 1669528
773 0 $t Dissertations Abstracts International $g 83-02B.
790 $a 0032
791 $a Ph.D.
792 $a 2021
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28415386