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All-Optical Thin Film Gating with Oxide Semiconductors.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	All-Optical Thin Film Gating with Oxide Semiconductors./
作者:	Vincent, Erzsebet Cass.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	162 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-06, Section: B.
Contained By:	Dissertations Abstracts International83-06B.
標題:	Condensed matter physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28773473
ISBN:	9798759975243

All-Optical Thin Film Gating with Oxide Semiconductors.
Vincent, Erzsebet Cass.

All-Optical Thin Film Gating with Oxide Semiconductors. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 162 p.

Source: Dissertations Abstracts International, Volume: 83-06, Section: B.

Thesis (Ph.D.)--The University of Chicago, 2021.

This item must not be sold to any third party vendors.

With the rise of two-dimensional materials, there has been a need to find techniques which fully harness these materials' unique properties. One important way to control these materials is via manipulation of their Fermi levels. A novel effect enables all-optical persistent bidirectional control of thin film materials' Fermi levels when they are placed on a strontium titanate substrate and stimulated with light with energy either above (ultraviolet) or below (red) strontium titanate's band gap. I present work using this optical gating technique to bidirectionally control the Fermi level of graphene and molybdenum disulfide, and show that this method corresponds to electrical backgating. Furthermore, I present research utilizing Kelvin probe force microscopy to investigate the work function response of bare strontium titanate to ultraviolet illumination, and to show how iron doping and different annealing conditions impact this response. These results demonstrate the applicability of this technique to diverse two-dimensional material systems, and provide new insight into a non-invasive method of Fermi level control which could prove useful for emerging applications.

ISBN: 9798759975243Subjects--Topical Terms:

3173567
Condensed matter physics.
Subjects--Index Terms:

Gating

All-Optical Thin Film Gating with Oxide Semiconductors.
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300 $a 162 p.
500 $a Source: Dissertations Abstracts International, Volume: 83-06, Section: B.
500 $a Advisor: Awschalom, David.
502 $a Thesis (Ph.D.)--The University of Chicago, 2021.
506 $a This item must not be sold to any third party vendors.
520 $a With the rise of two-dimensional materials, there has been a need to find techniques which fully harness these materials' unique properties. One important way to control these materials is via manipulation of their Fermi levels. A novel effect enables all-optical persistent bidirectional control of thin film materials' Fermi levels when they are placed on a strontium titanate substrate and stimulated with light with energy either above (ultraviolet) or below (red) strontium titanate's band gap. I present work using this optical gating technique to bidirectionally control the Fermi level of graphene and molybdenum disulfide, and show that this method corresponds to electrical backgating. Furthermore, I present research utilizing Kelvin probe force microscopy to investigate the work function response of bare strontium titanate to ultraviolet illumination, and to show how iron doping and different annealing conditions impact this response. These results demonstrate the applicability of this technique to diverse two-dimensional material systems, and provide new insight into a non-invasive method of Fermi level control which could prove useful for emerging applications.
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650 4 $a Condensed matter physics. $3 3173567
650 4 $a Quantum physics. $3 726746
650 4 $a Materials science. $3 543314
653 $a Gating
653 $a Strontium titanate
653 $a Thin films
653 $a Two-dimensional materials
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690 $a 0794
690 $a 0599
710 2 $a The University of Chicago. $b Molecular Engineering. $3 3192669
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793 $a English
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