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Differentiated layout styles for MOS...

Gimenez, Salvador Pinillos.

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Differentiated layout styles for MOSFETs = electrical behavior in harsh environments /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Differentiated layout styles for MOSFETs/ by Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck.
Reminder of title:	electrical behavior in harsh environments /
Author:	Gimenez, Salvador Pinillos.
other author:	Galembeck, Egon Henrique Salerno.
Published:	Cham :Springer International Publishing : : 2023.,
Description:	1 online resource (vii, 216 p.) :ill., digital ;24 cm.
[NT 15003449]:	Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.
Contained By:	Springer Nature eBook
Subject:	Metal oxide semiconductor field-effect transistors. -
Online resource:	https://doi.org/10.1007/978-3-031-29086-2
ISBN:	9783031290862

Differentiated layout styles for MOSFETs = electrical behavior in harsh environments /
Gimenez, Salvador Pinillos.

Differentiated layout styles for MOSFETselectrical behavior in harsh environments /[electronic resource] :by Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck. - Cham :Springer International Publishing :2023. - 1 online resource (vii, 216 p.) :ill., digital ;24 cm.

Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.

This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don't entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.

ISBN: 9783031290862

Standard No.: 10.1007/978-3-031-29086-2doiSubjects--Topical Terms:

553297
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Differentiated layout styles for MOSFETs = electrical behavior in harsh environments /
LDR:02621nmm a2200325 a 4500 001 2318709
003 DE-He213
005 20230505182902.0
006 m d
007 cr nn 008maaau
008 230902s2023 sz s 0 eng d
020 $a 9783031290862 $q (electronic bk.)
020 $a 9783031290855 $q (paper)
024 7 $a 10.1007/978-3-031-29086-2 $2 doi
035 $a 978-3-031-29086-2
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .G491 2023
100 1 $a Gimenez, Salvador Pinillos. $3 3377964
245 1 0 $a Differentiated layout styles for MOSFETs $h [electronic resource] : $b electrical behavior in harsh environments / $c by Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2023.
300 $a 1 online resource (vii, 216 p.) : $b ill., digital ; $c 24 cm.
505 0 $a Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.
520 $a This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don't entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.
650 0 $a Metal oxide semiconductor field-effect transistors. $3 553297
650 1 4 $a Electronic Circuits and Systems. $3 3538814
650 2 4 $a Electronic Devices. $3 3538495
650 2 4 $a Semiconductors. $3 516162
700 1 $a Galembeck, Egon Henrique Salerno. $3 3633958
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer Nature eBook
856 4 0 $u https://doi.org/10.1007/978-3-031-29086-2
950 $a Engineering (SpringerNature-11647)