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Multigate transistors for high frequ...

Sivasankaran, K.

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Multigate transistors for high frequency applications

Record Type:	Electronic resources : Monograph/item
Title/Author:	Multigate transistors for high frequency applications/ by K. Sivasankaran, Partha Sharathi Mallick.
Author:	Sivasankaran, K.
other author:	Mallick, Partha Sharathi.
Published:	Singapore :Springer Nature Singapore : : 2023.,
Description:	xi, 91 p. :ill., digital ;24 cm.
[NT 15003449]:	1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.
Contained By:	Springer Nature eBook
Subject:	Metal oxide semiconductor field-effect transistors. -
Online resource:	https://doi.org/10.1007/978-981-99-0157-9
ISBN:	9789819901579

Multigate transistors for high frequency applications
Sivasankaran, K.

Multigate transistors for high frequency applications[electronic resource] /by K. Sivasankaran, Partha Sharathi Mallick. - Singapore :Springer Nature Singapore :2023. - xi, 91 p. :ill., digital ;24 cm. - Springer tracts in electrical and electronics engineering,2731-4219. - Springer tracts in electrical and electronics engineering..

1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.

This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.

ISBN: 9789819901579

Standard No.: 10.1007/978-981-99-0157-9doiSubjects--Topical Terms:

553297
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 621.3815284

Multigate transistors for high frequency applications
LDR:02015nmm a2200337 a 4500 001 2316980
003 DE-He213
005 20230327130708.0
006 m d
007 cr nn 008maaau
008 230902s2023 si s 0 eng d
020 $a 9789819901579 $q (electronic bk.)
020 $a 9789819901562 $q (paper)
024 7 $a 10.1007/978-981-99-0157-9 $2 doi
035 $a 978-981-99-0157-9
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.99.M44
072 7 $a UKN $2 bicssc
072 7 $a COM075000 $2 bisacsh
072 7 $a UKN $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.99.M44 $b S624 2023
100 1 $a Sivasankaran, K. $3 3500876
245 1 0 $a Multigate transistors for high frequency applications $h [electronic resource] / $c by K. Sivasankaran, Partha Sharathi Mallick.
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2023.
300 $a xi, 91 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer tracts in electrical and electronics engineering, $x 2731-4219
505 0 $a 1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.
520 $a This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
650 0 $a Metal oxide semiconductor field-effect transistors. $3 553297
650 1 4 $a Computer Communication Networks. $3 775497
650 2 4 $a Microwaves, RF Engineering and Optical Communications. $3 3538694
700 1 $a Mallick, Partha Sharathi. $3 3486985
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer Nature eBook
830 0 $a Springer tracts in electrical and electronics engineering. $3 3598559
856 4 0 $u https://doi.org/10.1007/978-981-99-0157-9
950 $a Computer Science (SpringerNature-11645)