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RF and time-domain techniques for evaluating novel semiconductor transistors

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	RF and time-domain techniques for evaluating novel semiconductor transistors/ by Keith A. Jenkins.
作者:	Jenkins, Keith A.
出版者:	Cham :Springer International Publishing : : 2022.,
面頁冊數:	xi, 168 p. :ill., digital ;24 cm.
內容註:	Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.
Contained By:	Springer Nature eBook
標題:	Field-effect transistors. -
電子資源:	https://doi.org/10.1007/978-3-030-77775-3
ISBN:	9783030777753

RF and time-domain techniques for evaluating novel semiconductor transistors
Jenkins, Keith A.

RF and time-domain techniques for evaluating novel semiconductor transistors[electronic resource] /by Keith A. Jenkins. - Cham :Springer International Publishing :2022. - xi, 168 p. :ill., digital ;24 cm.

Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

ISBN: 9783030777753

Standard No.: 10.1007/978-3-030-77775-3doiSubjects--Topical Terms:

700655
Field-effect transistors.

LC Class. No.: TK7871.95 / .J45 2022

Dewey Class. No.: 621.3815284

RF and time-domain techniques for evaluating novel semiconductor transistors
LDR:02298nmm a2200325 a 4500 001 2297234
003 DE-He213
005 20211215195551.0
006 m d
007 cr nn 008maaau
008 230324s2022 sz s 0 eng d
020 $a 9783030777753 $q (electronic bk.)
020 $a 9783030777746 $q (paper)
024 7 $a 10.1007/978-3-030-77775-3 $2 doi
035 $a 978-3-030-77775-3
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95 $b .J45 2022
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .J52 2022
100 1 $a Jenkins, Keith A. $3 3592607
245 1 0 $a RF and time-domain techniques for evaluating novel semiconductor transistors $h [electronic resource] / $c by Keith A. Jenkins.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2022.
300 $a xi, 168 p. : $b ill., digital ; $c 24 cm.
505 0 $a Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.
520 $a This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
650 0 $a Field-effect transistors. $3 700655
650 1 4 $a Circuits and Systems. $3 896527
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
650 2 4 $a Microwaves, RF and Optical Engineering. $3 893985
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer Nature eBook
856 4 0 $u https://doi.org/10.1007/978-3-030-77775-3
950 $a Engineering (SpringerNature-11647)