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Defects in self-catalysed III-V nano...

Gott, James A.

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Defects in self-catalysed III-V nanowires

Record Type:	Electronic resources : Monograph/item
Title/Author:	Defects in self-catalysed III-V nanowires/ by James A. Gott.
Author:	Gott, James A.
Published:	Cham :Springer International Publishing : : 2022.,
Description:	xiv, 143 p. :ill., digital ;24 cm.
Notes:	"Doctoral Thesis accepted by University of Warwick, Coventry, United Kingdom."
[NT 15003449]:	Introduction -- Methods -- Defects in Nanowires -- Defect Dynamics in Nanowires -- Interfaces in Nanowire Axial Heterostructures -- Conclusions and Future Work.
Contained By:	Springer Nature eBook
Subject:	Nanowires. -
Online resource:	https://doi.org/10.1007/978-3-030-94062-1
ISBN:	9783030940621

Defects in self-catalysed III-V nanowires
Gott, James A.

Defects in self-catalysed III-V nanowires[electronic resource] /by James A. Gott. - Cham :Springer International Publishing :2022. - xiv, 143 p. :ill., digital ;24 cm. - Springer theses,2190-5061. - Springer theses..

"Doctoral Thesis accepted by University of Warwick, Coventry, United Kingdom."

Introduction -- Methods -- Defects in Nanowires -- Defect Dynamics in Nanowires -- Interfaces in Nanowire Axial Heterostructures -- Conclusions and Future Work.

This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.

ISBN: 9783030940621

Standard No.: 10.1007/978-3-030-94062-1doiSubjects--Topical Terms:

576100
Nanowires.

LC Class. No.: TK7874.85 / .G67 2022

Dewey Class. No.: 621.3815

Defects in self-catalysed III-V nanowires
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520 $a This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
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