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碳化矽功率金氧半場效電晶體之漂移區效應之模擬 = = Simulatio...

徐丞佑

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碳化矽功率金氧半場效電晶體之漂移區效應之模擬 = = Simulation of the effects of drift region in silicon carbide power Metal-Oxide-Semiconductor Field-Effect transistors /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	碳化矽功率金氧半場效電晶體之漂移區效應之模擬 =/ 徐丞佑撰
Reminder of title:	Simulation of the effects of drift region in silicon carbide power Metal-Oxide-Semiconductor Field-Effect transistors /
remainder title:	Simulation of the effects of drift region in silicon carbide power Metal-Oxide-Semiconductor Field-Effect transistors
Author:	徐丞佑
other author:	劉耿銘
Published:	[花蓮縣] :[國立東華大學電機工程學系], : 2022,
Description:	[18], 94面 :圖,表 ;30公分
Notes:	校內電子全文開放日期 2022/07/27
Subject:	半導體元件模擬 -
Online resource:	http://134.208.29.108/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=G0610823006.id&searchmode=basic電子全文(依作者授權而定)

碳化矽功率金氧半場效電晶體之漂移區效應之模擬 = = Simulation of the effects of drift region in silicon carbide power Metal-Oxide-Semiconductor Field-Effect transistors /
徐丞佑

碳化矽功率金氧半場效電晶體之漂移區效應之模擬 =Simulation of the effects of drift region in silicon carbide power Metal-Oxide-Semiconductor Field-Effect transistors /Simulation of the effects of drift region in silicon carbide power Metal-Oxide-Semiconductor Field-Effect transistors徐丞佑撰 - [花蓮縣] :[國立東華大學電機工程學系], 2022 - [18], 94面 :圖,表 ;30公分

校內電子全文開放日期 2022/07/27

碩士論文--國立東華大學電機工程學系

含參考書目Subjects--Topical Terms:

3582154
半導體元件模擬

碳化矽功率金氧半場效電晶體之漂移區效應之模擬 = = Simulation of the effects of drift region in silicon carbide power Metal-Oxide-Semiconductor Field-Effect transistors /
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500 $a 畢業學年度: 110
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