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Design of a High Modulation Efficien...
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Zhang, Yujia.
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Design of a High Modulation Efficiency Depletion-Mode Silicon Microring Modulator Based on a Vertical Junction.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Design of a High Modulation Efficiency Depletion-Mode Silicon Microring Modulator Based on a Vertical Junction./
作者:
Zhang, Yujia.
出版者:
Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:
87 p.
附註:
Source: Masters Abstracts International, Volume: 82-06.
Contained By:
Masters Abstracts International82-06.
標題:
Electrical engineering. -
電子資源:
https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28092960
ISBN:
9798698526254
Design of a High Modulation Efficiency Depletion-Mode Silicon Microring Modulator Based on a Vertical Junction.
Zhang, Yujia.
Design of a High Modulation Efficiency Depletion-Mode Silicon Microring Modulator Based on a Vertical Junction.
- Ann Arbor : ProQuest Dissertations & Theses, 2020 - 87 p.
Source: Masters Abstracts International, Volume: 82-06.
Thesis (M.S.)--University of California, Davis, 2020.
This item must not be sold to any third party vendors.
On-chip optical interconnect is an emerging technology with great potentials to replace traditional electrical interconnects for large-data-operation and low-power-consumption communications of integrated circuit chips. The microring resonator-based modulator has prominent advantages such as compact footprint, low loss, high quality factor (Q-factor), integrating capability, and low power consumption to be a prime component in CMOS- compatible optical interconnect systems. In this thesis, a silicon carrier-depletion mode microring modulator is designed. The design methodology and simulation process are demonstrated in detail. To achieve the highest electro-optic phase modulation efficiency, a vertical doping structure is optimized for pn junction integrated waveguide of the microring modulator.The proposed microring modulator with a small ring radius of 3.7 μm yields a high Q-factor higher than 8000. The simulated electro-optic phase efficiency is as high as 58 pm/V. The microring modulator is designed to achieve a critical coupling for the highest extinction ratio. When operated at low drive voltage from 0 V to -2 V bias, the modulation extinction ratio of the microring modulator reaches 35.56 dB when insertion loss is only about 3 dB. For the fabrication process definition, a simulation of the fabrication process, including implantation, etching, and annealing, is also be provided. Furthermore, a whole design and simulation process for a depletion-mode microdisk modulator with a vertical doping pn junction is also studied and demonstrated in Chapter 9.In the APPENDIX A, a high aspect-ratio through silicon vias fabrication process is demonstrated. Via applying a "hybrid Cu adhesion layer" deposited by E-beam system and sputtering in sequence, through silicon vias with an aspect ratio as high as 1: 15 is successfully achieved after electro-plating. In the APPENDIX B, a design and fabrication process of a 90° optical hybrid based on 150 nm Si3N4 platform is presented.
ISBN: 9798698526254Subjects--Topical Terms:
649834
Electrical engineering.
Subjects--Index Terms:
Microring/microdisk modulator
Design of a High Modulation Efficiency Depletion-Mode Silicon Microring Modulator Based on a Vertical Junction.
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On-chip optical interconnect is an emerging technology with great potentials to replace traditional electrical interconnects for large-data-operation and low-power-consumption communications of integrated circuit chips. The microring resonator-based modulator has prominent advantages such as compact footprint, low loss, high quality factor (Q-factor), integrating capability, and low power consumption to be a prime component in CMOS- compatible optical interconnect systems. In this thesis, a silicon carrier-depletion mode microring modulator is designed. The design methodology and simulation process are demonstrated in detail. To achieve the highest electro-optic phase modulation efficiency, a vertical doping structure is optimized for pn junction integrated waveguide of the microring modulator.The proposed microring modulator with a small ring radius of 3.7 μm yields a high Q-factor higher than 8000. The simulated electro-optic phase efficiency is as high as 58 pm/V. The microring modulator is designed to achieve a critical coupling for the highest extinction ratio. When operated at low drive voltage from 0 V to -2 V bias, the modulation extinction ratio of the microring modulator reaches 35.56 dB when insertion loss is only about 3 dB. For the fabrication process definition, a simulation of the fabrication process, including implantation, etching, and annealing, is also be provided. Furthermore, a whole design and simulation process for a depletion-mode microdisk modulator with a vertical doping pn junction is also studied and demonstrated in Chapter 9.In the APPENDIX A, a high aspect-ratio through silicon vias fabrication process is demonstrated. Via applying a "hybrid Cu adhesion layer" deposited by E-beam system and sputtering in sequence, through silicon vias with an aspect ratio as high as 1: 15 is successfully achieved after electro-plating. In the APPENDIX B, a design and fabrication process of a 90° optical hybrid based on 150 nm Si3N4 platform is presented.
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