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Mechanical Analysis of a Heterogeneo...

Graham, Erica Charlene.

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Mechanical Analysis of a Heterogeneously Integrated Silicon Photonic Interposer.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Mechanical Analysis of a Heterogeneously Integrated Silicon Photonic Interposer./
作者:	Graham, Erica Charlene.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	140 p.
附註:	Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
Contained By:	Dissertations Abstracts International82-12B.
標題:	Nanotechnology. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28491004
ISBN:	9798738650000

Mechanical Analysis of a Heterogeneously Integrated Silicon Photonic Interposer.
Graham, Erica Charlene.

Mechanical Analysis of a Heterogeneously Integrated Silicon Photonic Interposer. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 140 p.

Source: Dissertations Abstracts International, Volume: 82-12, Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2021.

This item must not be sold to any third party vendors.

Overcoming the bandwidth bottleneck in conventional interconnects necessitates transitioning to alternative scaling paradigms. Silicon (Si) photonics is considered a disruptive technology, capable of meeting the growing demands for higher bandwidth, low latency, and power efficiency. By leveraging the intrinsic properties of optical signals and manufacturing compatibility of Si, the co-integration of Si photonics and complementary-metal-oxide-semiconductor (CMOS) circuitry leading to terabit data speeds for next generation data communication can be realized. Heterogeneously integrating Si photonic functionality with well-established CMOS technology in an Si photonic interposer architecture simultaneously provides independent optimization as well as close integration of both technologies in one platform. The Si photonic interposer architecture is comprised of a photonic wafer that is SiO2-SiO2 bonded to a through silicon via (TSV) interposer. Electrical interfacing between attached die, active photonic devices, and the TSV interposer are established with the use of compact 2 μm diameter through-oxide-vias (TOV). The TOV has ultra-low capacitance (1.45 pf) and minimal parasitic capacitance (~3 pf) which is critical for next generation highly compact optical systems. Stress generation from TOV annealing can effect light propagation in optical devices due to the photo-elastic effect. This can manifest as weak mode confinement, wavelength shifts, multimode propagation, and several optical loss mechanisms.The objective of this dissertation is to study the effects TOV induced stress generated from annealing has on photonic devices within the architecture and develop an optical keep-out-zone (KOZ). Numerical models show that stress gradients from annealed TOVs impart high levels of tensile and compressive stress in neighboring submicron optical devices. Maximum wavelength shifts in ring resonator transmission peaks were found to exceed established design rules. To optically test fabricated ring resonators, isotropic grating couplers that provide moderate coupling efficiency irrespective of the wafer orientation were developed and implemented into the Si photonic interposer architecture. Post annealed simulations of the ring resonator's wavelength shift were found to be in good agreement with experimentally demonstrated results for design configurations with isolated TOVs. KOZ for TOVs in isolation and in arrays were then established.

ISBN: 9798738650000Subjects--Topical Terms:

526235
Nanotechnology.
Subjects--Index Terms:

Directional coupler

Mechanical Analysis of a Heterogeneously Integrated Silicon Photonic Interposer.
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520 $a Overcoming the bandwidth bottleneck in conventional interconnects necessitates transitioning to alternative scaling paradigms. Silicon (Si) photonics is considered a disruptive technology, capable of meeting the growing demands for higher bandwidth, low latency, and power efficiency. By leveraging the intrinsic properties of optical signals and manufacturing compatibility of Si, the co-integration of Si photonics and complementary-metal-oxide-semiconductor (CMOS) circuitry leading to terabit data speeds for next generation data communication can be realized. Heterogeneously integrating Si photonic functionality with well-established CMOS technology in an Si photonic interposer architecture simultaneously provides independent optimization as well as close integration of both technologies in one platform. The Si photonic interposer architecture is comprised of a photonic wafer that is SiO2-SiO2 bonded to a through silicon via (TSV) interposer. Electrical interfacing between attached die, active photonic devices, and the TSV interposer are established with the use of compact 2 μm diameter through-oxide-vias (TOV). The TOV has ultra-low capacitance (1.45 pf) and minimal parasitic capacitance (~3 pf) which is critical for next generation highly compact optical systems. Stress generation from TOV annealing can effect light propagation in optical devices due to the photo-elastic effect. This can manifest as weak mode confinement, wavelength shifts, multimode propagation, and several optical loss mechanisms.The objective of this dissertation is to study the effects TOV induced stress generated from annealing has on photonic devices within the architecture and develop an optical keep-out-zone (KOZ). Numerical models show that stress gradients from annealed TOVs impart high levels of tensile and compressive stress in neighboring submicron optical devices. Maximum wavelength shifts in ring resonator transmission peaks were found to exceed established design rules. To optically test fabricated ring resonators, isotropic grating couplers that provide moderate coupling efficiency irrespective of the wafer orientation were developed and implemented into the Si photonic interposer architecture. Post annealed simulations of the ring resonator's wavelength shift were found to be in good agreement with experimentally demonstrated results for design configurations with isolated TOVs. KOZ for TOVs in isolation and in arrays were then established.
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