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Optoelectronic Properties of Two-Dim...

Xie, Ti .

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Optoelectronic Properties of Two-Dimensional Molybdenum Ditelluride Nanophotonic Device.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Optoelectronic Properties of Two-Dimensional Molybdenum Ditelluride Nanophotonic Device./
Author:	Xie, Ti .
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	66 p.
Notes:	Source: Masters Abstracts International, Volume: 81-08.
Contained By:	Masters Abstracts International81-08.
Subject:	Nanotechnology. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27668348
ISBN:	9781392652534

Optoelectronic Properties of Two-Dimensional Molybdenum Ditelluride Nanophotonic Device.
Xie, Ti .

Optoelectronic Properties of Two-Dimensional Molybdenum Ditelluride Nanophotonic Device. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 66 p.

Source: Masters Abstracts International, Volume: 81-08.

Thesis (M.S.)--The George Washington University, 2020.

This item must not be sold to any third party vendors.

The development of graphene and the revolution in nanotechnology have sparked new interest in layered transition metal dichalcogenides (TMD). These TMDs were first studied in the 1960s, and because of their extensive material properties from semiconductors, metals to superconductors, they have become the subject of concern. Through intercalation chemistry, the parameters of the material can be flexibly adjusted to the required characteristics. As a new material that can control or interact with light to convert photons into electrical signals, its application in photonics, electronics and optoelectronics is very attractive. Two-dimensional materials interact with light in the wavelength regions of different spectral regions together with gap-free graphene. These spectral regions have short-wave ultraviolet and extreme ultraviolet, visible light, near-infrared, mid-infrared, and terahertz due to their excellent Absorptivity enables ultra-fast and ultra-sensitive detection of light in photodetectors. Next-generation photodetectors may be promising candidates for high sensitivity. TMD-based photodetectors are at the core of many technologies that understand the principles of photodetection and device performance.This thesis paper, we fabricated Molybdenum Ditelluride (MoTe2) based the field effect transistors (FETs) to test the optoelectronic properties of MoTe2. This thesis also introduces the fabrication process of MoTe2 based photodetector devices integrated with microring resonators (MRR). In addition, we also demonstrate the strain-effect to the materials and show the performance between unstrained and strained devices.

ISBN: 9781392652534Subjects--Topical Terms:

526235
Nanotechnology.
Subjects--Index Terms:

Transition metal dichalcogenides

Optoelectronic Properties of Two-Dimensional Molybdenum Ditelluride Nanophotonic Device.
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520 $a The development of graphene and the revolution in nanotechnology have sparked new interest in layered transition metal dichalcogenides (TMD). These TMDs were first studied in the 1960s, and because of their extensive material properties from semiconductors, metals to superconductors, they have become the subject of concern. Through intercalation chemistry, the parameters of the material can be flexibly adjusted to the required characteristics. As a new material that can control or interact with light to convert photons into electrical signals, its application in photonics, electronics and optoelectronics is very attractive. Two-dimensional materials interact with light in the wavelength regions of different spectral regions together with gap-free graphene. These spectral regions have short-wave ultraviolet and extreme ultraviolet, visible light, near-infrared, mid-infrared, and terahertz due to their excellent Absorptivity enables ultra-fast and ultra-sensitive detection of light in photodetectors. Next-generation photodetectors may be promising candidates for high sensitivity. TMD-based photodetectors are at the core of many technologies that understand the principles of photodetection and device performance.This thesis paper, we fabricated Molybdenum Ditelluride (MoTe2) based the field effect transistors (FETs) to test the optoelectronic properties of MoTe2. This thesis also introduces the fabrication process of MoTe2 based photodetector devices integrated with microring resonators (MRR). In addition, we also demonstrate the strain-effect to the materials and show the performance between unstrained and strained devices.
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