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Growth of Atomically-Flat Si/SiGe He...
~
Huo, Weiguang.
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Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition./
作者:
Huo, Weiguang.
出版者:
Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:
147 p.
附註:
Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
Contained By:
Dissertations Abstracts International82-12B.
標題:
Electrical engineering. -
電子資源:
https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28495568
ISBN:
9798505539576
Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition.
Huo, Weiguang.
Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition.
- Ann Arbor : ProQuest Dissertations & Theses, 2021 - 147 p.
Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
Thesis (Ph.D.)--Princeton University, 2021.
This item must not be sold to any third party vendors.
The spin of electrons in silicon quantum dots has been a promising candidate for qubits for quantum computing applications in recent years, demonstrating long coherence time due to its weak spin-orbit coupling and the existence of stable zero nuclear spin isotopes. However, a fundamental challenge is the degeneracy of the conduction band minima, which is a decoherence source. The realization of atomically flat Si/SiGe heterostructures which can potentially solve the small valley splitting issue in Si/SiGe quantum dots applications motivated the work in this thesis.We successfully built an Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD) system to overcome the limitations of a previous Rapid Thermal CVD system to grow Si/SiGe heterostructures. The within-wafer uniformity is better than 3% and the wafer-to-wafer uniformity is better than 5%, after improving the heating configuration. By optimizing the Si regrowth interface preparation method, we are able to keep the contamination density at the regrowth interface below 3$\imes$10$.
ISBN: 9798505539576Subjects--Topical Terms:
649834
Electrical engineering.
Subjects--Index Terms:
Chemical vapor deposition
Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition.
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The spin of electrons in silicon quantum dots has been a promising candidate for qubits for quantum computing applications in recent years, demonstrating long coherence time due to its weak spin-orbit coupling and the existence of stable zero nuclear spin isotopes. However, a fundamental challenge is the degeneracy of the conduction band minima, which is a decoherence source. The realization of atomically flat Si/SiGe heterostructures which can potentially solve the small valley splitting issue in Si/SiGe quantum dots applications motivated the work in this thesis.We successfully built an Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD) system to overcome the limitations of a previous Rapid Thermal CVD system to grow Si/SiGe heterostructures. The within-wafer uniformity is better than 3% and the wafer-to-wafer uniformity is better than 5%, after improving the heating configuration. By optimizing the Si regrowth interface preparation method, we are able to keep the contamination density at the regrowth interface below 3$\imes$10$.
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{-3}$ at growth temperatures of 575℃, which is 20 times better than layers grown by the old RT-CVD system. We then focused on the morphology study of SiGe layers grown on relaxed SiGe buffer. Three types of SiGe roughening mechanisms were identified and investigated: low-temperature roughening, high-temperature roughening, and initial interface effects. By introducing a thin Si buffer layer on top of the polished SiGe relaxed buffer, we demonstrated a nearly-atomically flat relaxed Si$_{0.7}$Ge$_{0.3}$ layer grown on a polished graded relaxed SiGe buffer, flatter than previous work for a relaxed Si$_{0.7}$Ge$_{0.3}$ layer ready for subsequent epitaxy by roughly a factor of four. We attributed the smoothing effect of the silicon to high ad-atom surface mobility during silicon growth. We further demonstrated that on the scale of silicon quantum dots (~100 nm), the RMS roughness was only 0.08 nm, about half of an atomic step height. This result may enable the subsequent growth of a tensile-Si channel with a large valley splitting.
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