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Impact of Nanoscale Defects on Therm...

Chauhan, Vinay Singh.

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Impact of Nanoscale Defects on Thermal Transport in Materials.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Impact of Nanoscale Defects on Thermal Transport in Materials./
作者:	Chauhan, Vinay Singh.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	259 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-01, Section: B.
Contained By:	Dissertations Abstracts International83-01B.
標題:	Nanoscience. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28642674
ISBN:	9798516075681

Impact of Nanoscale Defects on Thermal Transport in Materials.
Chauhan, Vinay Singh.

Impact of Nanoscale Defects on Thermal Transport in Materials. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 259 p.

Source: Dissertations Abstracts International, Volume: 83-01, Section: B.

Thesis (Ph.D.)--The Ohio State University, 2020.

This item must not be sold to any third party vendors.

Thermal management is critical for both nuclear and electronics industry because of heat generation during the operation. Major part of energy consumed in microelectronic devices and nuclear reactors dissipates as heat, and sometimes also creates hot spots. This is critical and precarious for the nuclear applications, while for the electronics, it has detrimental effects on the device performance and affects the reliability of devices.The microelectronic devices and nuclear materials are exposed to the extreme environments such as irradiation, vacuum, and molten salts etc. In addition to the already existing intrinsic defects, this exposure leads to the creation of multiple defects inside the materials. The goal of this research is to understand the phonon transport physics at these small length scales due to intrinsic and extrinsic defects in the material.Primarily, three different materials are discussed in this report. SiC and sapphire have been chosen for their applications in both microelectronic devices and nuclear industry while ceria has been studied as a surrogate material for the nuclear fuels (UO2 and ThO2).There are different kinds of defects created inside the material when exposed to irradiation. The complex interaction of phonons with these defects dictates the resultant thermal transport however, it is difficult to apportion the impact of a particular type of defect. The approach used here employs materials induced with only a few types of defects at a time in order to isolate and study the impact of induced defect on thermal transport. Consequently, irradiation has been used in this study to induce desired defects inside the material and thereafter study their effect on thermal conductivity.Interstitials and vacancies, collectively known as point defects are formed under low dose and heavy ion irradiation regime. Here, SiC is irradiated using Kr ions to study impact of point defects on its vibrational and thermal properties. While the ceria is irradiated at high temperature by protons of multiple energies to form dislocation loops and point defects. Multiple characterization techniques are used such as XRD, Raman spectroscopy, and optical ellipsometry for the quantification and impact of defects on thermal and optical properties of ceria. Lastly, sapphire is patterned with cylindrical nanochannels using Xe ions to enable the studies related to the nanoscale thermal transport.The major contributions of this work lie in better understanding of phonon interactions with the different defects, thereby improving the overall understanding of nanoscale thermal transport. It has been demonstrated that heat transfer in sapphire can be guided in a preferential direction by patterning the material with nanochannels. This can be helpful in developing thermally functional materials where heat transfer can be directed on need basis. This study also correlates results of different well-established characterization techniques to predict the heat transfer in materials with defects. This could be advantageous in future where a single characterization technique can provide multiple insights about the thermal properties of the material.

ISBN: 9798516075681Subjects--Topical Terms:

587832
Nanoscience.
Subjects--Index Terms:

Thermal conductivity

Impact of Nanoscale Defects on Thermal Transport in Materials.
LDR:04493nmm a2200433 4500 001 2280686
005 20210907071132.5
008 220723s2020 ||||||||||||||||| ||eng d
020 $a 9798516075681
035 $a (MiAaPQ)AAI28642674
035 $a (MiAaPQ)OhioLINKosu1586440154974469
035 $a AAI28642674
040 $a MiAaPQ $c MiAaPQ
100 1 $a Chauhan, Vinay Singh. $3 3559229
245 1 0 $a Impact of Nanoscale Defects on Thermal Transport in Materials.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 259 p.
500 $a Source: Dissertations Abstracts International, Volume: 83-01, Section: B.
500 $a Advisor: Khafizov, Marat.
502 $a Thesis (Ph.D.)--The Ohio State University, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a Thermal management is critical for both nuclear and electronics industry because of heat generation during the operation. Major part of energy consumed in microelectronic devices and nuclear reactors dissipates as heat, and sometimes also creates hot spots. This is critical and precarious for the nuclear applications, while for the electronics, it has detrimental effects on the device performance and affects the reliability of devices.The microelectronic devices and nuclear materials are exposed to the extreme environments such as irradiation, vacuum, and molten salts etc. In addition to the already existing intrinsic defects, this exposure leads to the creation of multiple defects inside the materials. The goal of this research is to understand the phonon transport physics at these small length scales due to intrinsic and extrinsic defects in the material.Primarily, three different materials are discussed in this report. SiC and sapphire have been chosen for their applications in both microelectronic devices and nuclear industry while ceria has been studied as a surrogate material for the nuclear fuels (UO2 and ThO2).There are different kinds of defects created inside the material when exposed to irradiation. The complex interaction of phonons with these defects dictates the resultant thermal transport however, it is difficult to apportion the impact of a particular type of defect. The approach used here employs materials induced with only a few types of defects at a time in order to isolate and study the impact of induced defect on thermal transport. Consequently, irradiation has been used in this study to induce desired defects inside the material and thereafter study their effect on thermal conductivity.Interstitials and vacancies, collectively known as point defects are formed under low dose and heavy ion irradiation regime. Here, SiC is irradiated using Kr ions to study impact of point defects on its vibrational and thermal properties. While the ceria is irradiated at high temperature by protons of multiple energies to form dislocation loops and point defects. Multiple characterization techniques are used such as XRD, Raman spectroscopy, and optical ellipsometry for the quantification and impact of defects on thermal and optical properties of ceria. Lastly, sapphire is patterned with cylindrical nanochannels using Xe ions to enable the studies related to the nanoscale thermal transport.The major contributions of this work lie in better understanding of phonon interactions with the different defects, thereby improving the overall understanding of nanoscale thermal transport. It has been demonstrated that heat transfer in sapphire can be guided in a preferential direction by patterning the material with nanochannels. This can be helpful in developing thermally functional materials where heat transfer can be directed on need basis. This study also correlates results of different well-established characterization techniques to predict the heat transfer in materials with defects. This could be advantageous in future where a single characterization technique can provide multiple insights about the thermal properties of the material.
590 $a School code: 0168.
650 4 $a Nanoscience. $3 587832
650 4 $a Nuclear physics. $3 517741
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Materials science. $3 543314
650 4 $a Nuclear engineering. $3 595435
650 4 $a Mechanical engineering. $3 649730
653 $a Thermal conductivity
653 $a Nanoscale thermal transport
653 $a Phonons
653 $a Phonon scattering
653 $a Thin films
653 $a Thermoreflectance
690 $a 0565
690 $a 0611
690 $a 0794
690 $a 0552
690 $a 0548
690 $a 0756
710 2 $a The Ohio State University. $b Mechanical Engineering. $3 1684523
773 0 $t Dissertations Abstracts International $g 83-01B.
790 $a 0168
791 $a Ph.D.
792 $a 2020
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28642674