東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Electromigration induced partial dis...

Chen, Hsin-Ping.

FindBook

Google Book

Amazon

博客來

Electromigration induced partial dislocation motion and microstructure changes in nano-twin modified Copper interconnects.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Electromigration induced partial dislocation motion and microstructure changes in nano-twin modified Copper interconnects./
作者:	Chen, Hsin-Ping.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2010,
面頁冊數:	133 p.
附註:	Source: Dissertations Abstracts International, Volume: 73-03, Section: B.
Contained By:	Dissertations Abstracts International73-03B.
標題:	Physical chemistry. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3463920
ISBN:	9781124770703

Electromigration induced partial dislocation motion and microstructure changes in nano-twin modified Copper interconnects.
Chen, Hsin-Ping.

Electromigration induced partial dislocation motion and microstructure changes in nano-twin modified Copper interconnects. - Ann Arbor : ProQuest Dissertations & Theses, 2010 - 133 p.

Source: Dissertations Abstracts International, Volume: 73-03, Section: B.

Thesis (Ph.D.)--University of California, Los Angeles, 2010.

This item is not available from ProQuest Dissertations & Theses.

As we near the end of Moore's law, dimensional scaling has a detrimental effect on device reliability. Particularly, electromigration (EM) has been the most serious reliability issues in back-end-of-line Cu interconnects as the feature size of electronic circuits decreases to allow for higher degree of integration and greater functionality. Due to the need to meet reliability requirements, a tremendous amount of research has been devoted to solving fundamental EM-induced instability problems in Cu interconnects. Recently, nanotwins have been reported to retard diffusion of Cu under EM. However, to date, our understanding regarding how nanotwins interact with high density of electron flow to impact EM behaviors is still quite limited. In this dissertation, the effect of nanotwin boundaries on surface step diffusion, back-stress generation and microstructure stability are examined to prove that nano-twinned Cu can be promising interconnect materials for applications in advanced nano-electronic technology. Surface diffusion kinetics in Cu grains with and without nanotwins was investigated by using in-situ ultrahigh vacuum and ultrahigh resolution transmission electron microscopy. The nanotwin-modified surface, in which the zigzag shape can be controlled by the equilibrium between surface tensions and twin boundary energy, was found to reduce the surface diffusion. In contrast to diffusivity of free surface of Cu without nanotwins, the calculated diffusivity of nanotwin-modified Cu surface is one order of magnitude smaller. We propose that high density of surface steps with (111) terraces are stable and created in nanotwin-modified surface. The scattering interaction between the high density of surface step-edges might shadow the electron wind force and leads to a greater EM resistance. Additionally, hillock growth has been observed in the anode side of unpassivated and nanotwinned Cu lines. The formation of hillocks implies that EM has caused a localized back-stress gradient in the Cu line which suggests the possibility to increase greatly the critical length of Cu interconnects without EM damage by introducing a high density of nanotwins. Furthermore, elimination of twin boundaries under electric force was observed because of EM-induced slip of partial dislocations. The EM-induced gliding of partial dislocations and shuffling Cu atoms at incoherent twin boundaries (ITBs) have been demonstrated to enhance the mobility of ITBs and to be the dominant de-twinning mechanisms in nanotwinned Cu. The notably effect of nanotwins on EM reliability and the microstructure stability of nanotwins under EM may enable the microelectronic industry to develop processes and structures to improve the integration and reliability of Cu/ low-k interconnect technology.

ISBN: 9781124770703Subjects--Topical Terms:

1981412
Physical chemistry.
Subjects--Index Terms:

Copper interconnects

Electromigration induced partial dislocation motion and microstructure changes in nano-twin modified Copper interconnects.
LDR:04171nmm a2200397 4500 001 2277934
005 20210528103114.5
008 220723s2010 ||||||||||||||||| ||eng d
020 $a 9781124770703
035 $a (MiAaPQ)AAI3463920
035 $a AAI3463920
040 $a MiAaPQ $c MiAaPQ
100 1 $a Chen, Hsin-Ping. $3 3556267
245 1 0 $a Electromigration induced partial dislocation motion and microstructure changes in nano-twin modified Copper interconnects.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2010
300 $a 133 p.
500 $a Source: Dissertations Abstracts International, Volume: 73-03, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Tu, King-Ning.
502 $a Thesis (Ph.D.)--University of California, Los Angeles, 2010.
506 $a This item is not available from ProQuest Dissertations & Theses.
506 $a This item must not be sold to any third party vendors.
520 $a As we near the end of Moore's law, dimensional scaling has a detrimental effect on device reliability. Particularly, electromigration (EM) has been the most serious reliability issues in back-end-of-line Cu interconnects as the feature size of electronic circuits decreases to allow for higher degree of integration and greater functionality. Due to the need to meet reliability requirements, a tremendous amount of research has been devoted to solving fundamental EM-induced instability problems in Cu interconnects. Recently, nanotwins have been reported to retard diffusion of Cu under EM. However, to date, our understanding regarding how nanotwins interact with high density of electron flow to impact EM behaviors is still quite limited. In this dissertation, the effect of nanotwin boundaries on surface step diffusion, back-stress generation and microstructure stability are examined to prove that nano-twinned Cu can be promising interconnect materials for applications in advanced nano-electronic technology. Surface diffusion kinetics in Cu grains with and without nanotwins was investigated by using in-situ ultrahigh vacuum and ultrahigh resolution transmission electron microscopy. The nanotwin-modified surface, in which the zigzag shape can be controlled by the equilibrium between surface tensions and twin boundary energy, was found to reduce the surface diffusion. In contrast to diffusivity of free surface of Cu without nanotwins, the calculated diffusivity of nanotwin-modified Cu surface is one order of magnitude smaller. We propose that high density of surface steps with (111) terraces are stable and created in nanotwin-modified surface. The scattering interaction between the high density of surface step-edges might shadow the electron wind force and leads to a greater EM resistance. Additionally, hillock growth has been observed in the anode side of unpassivated and nanotwinned Cu lines. The formation of hillocks implies that EM has caused a localized back-stress gradient in the Cu line which suggests the possibility to increase greatly the critical length of Cu interconnects without EM damage by introducing a high density of nanotwins. Furthermore, elimination of twin boundaries under electric force was observed because of EM-induced slip of partial dislocations. The EM-induced gliding of partial dislocations and shuffling Cu atoms at incoherent twin boundaries (ITBs) have been demonstrated to enhance the mobility of ITBs and to be the dominant de-twinning mechanisms in nanotwinned Cu. The notably effect of nanotwins on EM reliability and the microstructure stability of nanotwins under EM may enable the microelectronic industry to develop processes and structures to improve the integration and reliability of Cu/ low-k interconnect technology.
590 $a School code: 0031.
650 4 $a Physical chemistry. $3 1981412
650 4 $a Materials science. $3 543314
653 $a Copper interconnects
653 $a Dislocation motion
653 $a Electromigration
653 $a Microstructure
653 $a Nano-twin boundaries
653 $a Surface diffusion
690 $a 0494
690 $a 0794
710 2 $a University of California, Los Angeles. $3 626622
773 0 $t Dissertations Abstracts International $g 73-03B.
790 $a 0031
791 $a Ph.D.
792 $a 2010
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3463920