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Organometal Halide Perovskite Based ...

Wu, Xiaojing.

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Organometal Halide Perovskite Based Resistive Memory Devices: Device Engineering and Material Characterization.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Organometal Halide Perovskite Based Resistive Memory Devices: Device Engineering and Material Characterization./
作者:	Wu, Xiaojing.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2017,
面頁冊數:	163 p.
附註:	Source: Dissertations Abstracts International, Volume: 79-08, Section: B.
Contained By:	Dissertations Abstracts International79-08B.
標題:	Physical chemistry. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10753262
ISBN:	9780355553536

Organometal Halide Perovskite Based Resistive Memory Devices: Device Engineering and Material Characterization.
Wu, Xiaojing.

Organometal Halide Perovskite Based Resistive Memory Devices: Device Engineering and Material Characterization. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 163 p.

Source: Dissertations Abstracts International, Volume: 79-08, Section: B.

Thesis (Ph.D.)--The Chinese University of Hong Kong (Hong Kong), 2017.

This item is not available from ProQuest Dissertations & Theses.

Resistive switching random access memory (RRAM) has emerged as a next-generation nonvolatile memory device due to its scalability, fast operation speed, and low power consumption. Searching for new materials for RRAM has become an active research field in the past decade. Oxides and organic materials have been studied intensively. On the other hand, organometal halide perovskite materials have recently emerged as an excellent solution-processed semiconductor material for optoelectronic devices. Particularly interesting is their capability for conducting both electrons and ions. In this regard, organometal halide perovskite materials may have a strong potential for applications in memory devices where ion motion can be utilized to induce memory effect. This thesis describes my research efforts on understanding the device physics and material sciences of organometal halide perovskite based RRAM.Firstly, electrode effect for RRAM devices has been studied. It is found that devices with 'ITO/active layer/InGa' structures yield universal nonvolatile resistive memory behavior when active layer varies from polymers, organic small molecules, colloidal nanocrystals to organometal halide perovskites. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40 to 50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface.(Abstract shortened by ProQuest).

ISBN: 9780355553536Subjects--Topical Terms:

1981412
Physical chemistry.
Subjects--Index Terms:

Device physics

Organometal Halide Perovskite Based Resistive Memory Devices: Device Engineering and Material Characterization.
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520 $a Resistive switching random access memory (RRAM) has emerged as a next-generation nonvolatile memory device due to its scalability, fast operation speed, and low power consumption. Searching for new materials for RRAM has become an active research field in the past decade. Oxides and organic materials have been studied intensively. On the other hand, organometal halide perovskite materials have recently emerged as an excellent solution-processed semiconductor material for optoelectronic devices. Particularly interesting is their capability for conducting both electrons and ions. In this regard, organometal halide perovskite materials may have a strong potential for applications in memory devices where ion motion can be utilized to induce memory effect. This thesis describes my research efforts on understanding the device physics and material sciences of organometal halide perovskite based RRAM.Firstly, electrode effect for RRAM devices has been studied. It is found that devices with 'ITO/active layer/InGa' structures yield universal nonvolatile resistive memory behavior when active layer varies from polymers, organic small molecules, colloidal nanocrystals to organometal halide perovskites. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40 to 50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface.(Abstract shortened by ProQuest).
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