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Readout Transimpedance Amplifiers Mo...

Gong, Ming-Jia Mecca.

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Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Production 22-nm FDSOI CMOS Technology.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Production 22-nm FDSOI CMOS Technology./
作者:	Gong, Ming-Jia Mecca.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	86 p.
附註:	Source: Masters Abstracts International, Volume: 82-06.
Contained By:	Masters Abstracts International82-06.
標題:	Electrical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28095393
ISBN:	9798698549000

Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Production 22-nm FDSOI CMOS Technology.
Gong, Ming-Jia Mecca.

Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Production 22-nm FDSOI CMOS Technology. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 86 p.

Source: Masters Abstracts International, Volume: 82-06.

Thesis (M.A.S.)--University of Toronto (Canada), 2020.

This item must not be sold to any third party vendors.

This thesis investigates the design of spin qubit readout systems in a production 22-nm FDSOI CMOS technology for monolithically integrated quantum processors operated at temperatures above 4 K. At 300 K, the readout amplifier was measured to have a transimpedance gain of 108 dBΩ with 8 GHz of bandwidth, S22 output matching < -10 dB from 0 to 60 GHz and an input-referred noise current of < 1 pA/√Hz up to 8 GHz. Simulated results at 12 K showed a transimpedance gain of 112 dBΩ with 11 GHz of bandwidth, S22 < -7 dB from 0 to 40 GHz and a minimum input noise current of 188 fA/√Hz. When integrated with a p-type quantum dot structure, measurements at 300 K showed a peak S21 of 18.9 dB with 8 GHz of bandwidth and S22 < -10 dB up to 60 GHz, while dissipating < 4.5 mW of power.

ISBN: 9798698549000Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

FDSOI CMOS

Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Production 22-nm FDSOI CMOS Technology.
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245 1 0 $a Readout Transimpedance Amplifiers Monolithically Integrated with Quantum Dot Structures in a Production 22-nm FDSOI CMOS Technology.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 86 p.
500 $a Source: Masters Abstracts International, Volume: 82-06.
500 $a Advisor: Voinigescu, Sorin P.
502 $a Thesis (M.A.S.)--University of Toronto (Canada), 2020.
506 $a This item must not be sold to any third party vendors.
520 $a This thesis investigates the design of spin qubit readout systems in a production 22-nm FDSOI CMOS technology for monolithically integrated quantum processors operated at temperatures above 4 K. At 300 K, the readout amplifier was measured to have a transimpedance gain of 108 dBΩ with 8 GHz of bandwidth, S22 output matching < -10 dB from 0 to 60 GHz and an input-referred noise current of < 1 pA/√Hz up to 8 GHz. Simulated results at 12 K showed a transimpedance gain of 112 dBΩ with 11 GHz of bandwidth, S22 < -7 dB from 0 to 40 GHz and a minimum input noise current of 188 fA/√Hz. When integrated with a p-type quantum dot structure, measurements at 300 K showed a peak S21 of 18.9 dB with 8 GHz of bandwidth and S22 < -10 dB up to 60 GHz, while dissipating < 4.5 mW of power.
590 $a School code: 0779.
650 4 $a Electrical engineering. $3 649834
650 4 $a Quantum physics. $3 726746
653 $a FDSOI CMOS
653 $a Quantum Computing
653 $a Quantum Dot
653 $a Qubit Readout
653 $a Spin Qubits
653 $a Transimpedance Amplifier
690 $a 0544
690 $a 0599
710 2 $a University of Toronto (Canada). $b Electrical and Computer Engineering. $3 2096349
773 0 $t Masters Abstracts International $g 82-06.
790 $a 0779
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792 $a 2020
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28095393