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Graphene as a Tool to Investigate To...

Qubbaj, Sara.

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Graphene as a Tool to Investigate Topological Defects and Strongly Correlated Materials.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Graphene as a Tool to Investigate Topological Defects and Strongly Correlated Materials./
作者:	Qubbaj, Sara.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	76 p.
附註:	Source: Masters Abstracts International, Volume: 82-06.
Contained By:	Masters Abstracts International82-06.
標題:	Physics. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28028736
ISBN:	9798698594796

Graphene as a Tool to Investigate Topological Defects and Strongly Correlated Materials.
Qubbaj, Sara.

Graphene as a Tool to Investigate Topological Defects and Strongly Correlated Materials. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 76 p.

Source: Masters Abstracts International, Volume: 82-06.

Thesis (M.S.)--California State University, Long Beach, 2020.

This item must not be sold to any third party vendors.

The exceptional electronic properties of graphene make it a great tool to probe transport phenomena in layered materials, such as Ruthenium Chloride (RuCl3). The spin-orbit assisted Mott insulator RuCl3 presents exciting physics, thanks to spin-orbit entangled moments with interactions that are highly anisotropic. These properties make RuCl3 the closest experimental realization of the Heisenberg-Kitaev model and of high interest in quantum computing applications. The highly insulating character of RuCl3 limits the ability to characterize it through electronic transport measurements. Here, we investigate some properties of the strongly correlated material in proximity to graphene through electronic transport measurement on a RuCl3/graphene heterostructure. We observe an indication of strong Kitaev interactions RuCl3, in the measurements of resistance as a function of temperature on the heterostructure. In this thesis we also show that graphene can be used as a tool to investigate the effect of topological defects on electronic transport experiments. While these domains walls or stacking boundaries play an important role in electronic transport, their effect is usually hard to isolate or control. Here, we show that it is possible to tune stacking boundaries in a reversible process, by applying strain on a multilayer suspended graphene sample, using a micro electro-mechanical system of actuators. We attribute the observed discreteness of differential conductance and enhancement in quantum Hall effect features to the switching of topological defects, triggered by strain.

ISBN: 9798698594796Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

Graphene

Graphene as a Tool to Investigate Topological Defects and Strongly Correlated Materials.
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506 $a This item must not be sold to any third party vendors.
520 $a The exceptional electronic properties of graphene make it a great tool to probe transport phenomena in layered materials, such as Ruthenium Chloride (RuCl3). The spin-orbit assisted Mott insulator RuCl3 presents exciting physics, thanks to spin-orbit entangled moments with interactions that are highly anisotropic. These properties make RuCl3 the closest experimental realization of the Heisenberg-Kitaev model and of high interest in quantum computing applications. The highly insulating character of RuCl3 limits the ability to characterize it through electronic transport measurements. Here, we investigate some properties of the strongly correlated material in proximity to graphene through electronic transport measurement on a RuCl3/graphene heterostructure. We observe an indication of strong Kitaev interactions RuCl3, in the measurements of resistance as a function of temperature on the heterostructure. In this thesis we also show that graphene can be used as a tool to investigate the effect of topological defects on electronic transport experiments. While these domains walls or stacking boundaries play an important role in electronic transport, their effect is usually hard to isolate or control. Here, we show that it is possible to tune stacking boundaries in a reversible process, by applying strain on a multilayer suspended graphene sample, using a micro electro-mechanical system of actuators. We attribute the observed discreteness of differential conductance and enhancement in quantum Hall effect features to the switching of topological defects, triggered by strain.
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